< Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 High power and High Gain: 9.6+/-0.3 24.0+/-0.6 FEATURES 2 Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz 10.0+/-0.3 4-C2 1 +0.05 High Efficiency: 60%typ.on HF Band 3 0.1 -0.01 R1.6+/-0.15 4.5+/-0.7 5.0+/-0.3 6.2+/-0.7 18.5+/-0.3 APPLICATION 3.3+/-0.2 For output stage of high power amplifiers in HF Band mobile radio sets. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm RoHS COMPLIANT RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 50 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25°C 176.5 W Pin Input power Zg=Zl=50 12.5 W ID Drain current - 25 A Tch Channel temperature - 175 °C Tstg Storage temperature - -40 to +175 °C Rth j-c Thermal resistance 0.85 °C/W junction to case Note 1: Above parameters are guaranteed independently. Publication Date : Oct．2011 1 < Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zerogate voltage drain current VDS=17V, VGS=0V - - 10 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage VDS=12V, IDS=1mA 1.5 - 4.5 V Pout Output power f=30MHz ,VDD=12.5V 100 110 - W Drain efficiency Pin=7W, Idq=1.0A 55 60 - % Load VSWR tolerance VDD=15.2V,Po=100W(Pin Control) D f=30MHz,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) Note : Above parameters , ratings , limits and conditions are subject to change. Publication Date : Oct．2011 2 No destroy - < Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE 10 Ta=+25°C Vds=10V 160 8 120 6 Ids(A) CHANNEL DISSIPATION Pch(W) ... 200 Vgs-Ids CHARACTERISTICS 80 4 2 40 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 1 2 3 4 Vgs(V) 5 6 7 Vds VS. Ciss CHARACTERISTICS 10 300 Vgs=6V Ta=+25°C 8 250 Vgs=5.7V Ta=+25°C f=1MHz Ids(A) 6 Ciss(pF) 200 Vgs=5.4V 4 Vgs=5.1V 150 100 Vgs=4.8V 2 50 Vgs=4.5V Vgs=4.2V 0 0 2 4 6 Vds(V) 8 0 0 10 20 30 Vds(V) Vds VS. Coss CHARACTERISTICS Vds VS. Crss CHARACTERISTICS 500 40 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 400 30 300 Crss(pF) Coss(pF) 10 200 20 10 100 0 0 0 10 20 0 30 Vds(V) 10 20 Vds(V) Publication Date : Oct．2011 3 30 < Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 60 Gp 20 40 10 0 0 10 20 30 Pin(dBm) 0 0 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Po Idd 60 40 20 0 4 6 8 10 Vdd(V) 12 Ta=25°C f=30MHz Vdd=12.5V Idq=1A 40 30 20 2 4 6 Pin(W) 8 10 Vgs-Ids CHARACTERISTICS 2 +25°C 10 Vds=10V Tc=-25~+75°C 8 Ids(A) 80 Idd 0 40 Idd(A) Po(W) 100 50 40 20 140 120 60 60 Vdd-Po CHARACTERISTICS Ta=25°C f=30MHz Pin=7W Idq=1A Zg=ZI=50 ohm ηd 80 20 Ｉｄｄ 70 Po 6 4 +75°C 2 -25°C 0 0 14 Publication Date : Oct．2011 4 1 2 3 4 Vgs(V) 5 6 7 ηd(%) 80 ηｄ 30 80 100 Pout(W) , Idd(A) 40 100 Po ηd(%) Po(dBm) , Gp(dB) , Idd(A) 120 Ta=+25°C f=30MHz Vdd=12.5V Idq=1A 50 Pin-Po CHARACTERISTICS < Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W TEST CIRCUIT(f=30MHz) Vgg C1 Vdd 9.1K ohm C1 L2 180pF 10μF,50V 200pF 82pF 82pF C1 C1 20pF L3 5mm Pin 82pF 330pF 82pF L1 4.7K ohm 220pF 330μF,50V 1000pF L4 4.7 ohm 220pF 1000pF 20pF 180pF 19 30 200pF 4.5 82pF 82pF 82pF 330pF 82pF 18 68 21 75 24 90 43 93 50 100 53 56 93 100 C1：100pF,0.022μF,0.1μF in parallel Dimensions:mm Note:Board material PTFE substrate L1: 8 Turns,I.D8mm,D1.6mm silver plateted copper wire Micro strip line width=4.2mm/50 L2: 10 Turns,I.D8mm,D1.6mm silver plateted copper wire L3: 5 Turns,I.D6mm,D0.7mm copper wire P=1mm L4: 1 Turns,I.D10mm,D1.6mm silver plateted copper wire Publication Date : Oct．2011 5 12 8 14 POUT < Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=10 f=30MHz Zout f=30MHz Zin Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 30 8.86-j14.31 0.64-j0.01 Po=115W, Vdd=12.5V,Pin=7W Publication Date : Oct．2011 6 < Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.835 0.839 0.849 0.886 0.915 0.932 0.945 0.951 0.958 0.960 0.964 0.966 0.970 0.967 0.971 0.970 0.969 0.970 0.976 0.973 0.973 0.977 (ang) -158.6 -171.1 -172.9 -173.9 -175.1 -176.4 -177.3 -178.2 -179.3 -179.8 179.5 178.7 178.2 177.5 177.0 176.5 175.6 175.2 174.5 173.9 173.2 172.6 S21 (mag) (ang) 31.451 94.8 10.628 79.3 6.212 71.0 2.749 54.1 1.541 40.2 0.972 31.6 0.671 24.5 0.481 20.1 0.365 15.2 0.291 13.4 0.243 8.5 0.195 6.8 0.154 5.2 0.133 4.8 0.119 1.0 0.109 -1.3 0.092 0.6 0.080 -4.0 0.073 -1.9 0.067 -5.4 0.058 4.1 0.049 -8.7 Publication Date : Oct．2011 7 S12 (mag) 0.014 0.014 0.012 0.012 0.009 0.007 0.006 0.005 0.003 0.003 0.004 0.003 0.004 0.005 0.003 0.006 0.007 0.005 0.007 0.008 0.008 0.011 S22 (ang) 5.2 -9.9 -20.7 -34.1 -27.8 -36.9 -54.4 -30.4 13.1 -18.0 45.3 42.3 78.6 80.1 72.0 61.3 67.2 82.2 78.7 69.9 86.8 78.7 (mag) 0.770 0.764 0.786 0.842 0.880 0.908 0.946 0.941 0.952 0.974 0.963 0.971 0.975 0.965 0.972 0.973 0.964 0.974 0.969 0.973 0.973 0.971 (ang) -162.1 -171.6 -171.4 -171.4 -173.6 -174.3 -176.2 -177.4 -178.3 -179.8 179.6 178.6 177.5 176.8 176.0 175.1 174.9 173.9 173.3 172.6 171.5 171.7 < Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 8 < Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 9