< HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM800DG-90F IF···································································· 800A VRRM·························································· 4500V 2-element in a Pack High insulated Type Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM December 2012 HVM-2026-B.doc Dimensions in mm 1 < HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules MAXIMUM RATINGS Symbol Item VRRM Repetitive peak reverse voltage IF IFSM I2t Ptot Viso Ve Tj Tjop Tstg Forward current Surge forward current Surge current load integral Maximum power dissipation Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature Conditions Ratings 4500 4400 800 6.5 211 4160 10200 3500 −50 ~ +150 −50 ~ +125 −55 ~ +125 Tj = −40…+125°C Tj = −50°C DC, Tc = 65°C Tj_start = 125°C, tp = 10 ms, Half-sine wave, VR = 0 V Tc = 25°C RMS, sinusoidal, f = 60 Hz, t = 1 min. RMS, sinusoidal, f = 60 Hz, QPD ≤ 10 pC Unit V A kA kA2s W V V °C °C °C ELECTRICAL CHARACTERISTICS Symbol Item Conditions IRRM Repetitive reverse current VRM = VRRM VFM Forward voltage IF = 800 A trr Reverse recovery time Irr Reverse recovery current Qrr Revers0He recovery charge Erec(10%) Reverse recovery energy (Note 1) Erec Reverse recovery energy VCC = 2800 V IF = 800 A −di/dt = 2600 A/µs @ Tj = 25°C −di/dt = 2400 A/µs @ Tj = 125°C Ls = 150 nH Inductive load Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min — — — — — — — — — — — — — — Limits Typ — 3.0 2.55 2.85 0.70 0.90 700 760 660 1040 0.96 1.50 1.10 1.70 Max 1.0 — — 3.45 — — — — — — — — — — Min — Limits Typ — Max 30.0 K/kW — 24.0 — K/kW Min 7.0 3.0 — 600 26.0 56.0 — — Limits Typ — — 1.0 — — — 22.0 0.14 Max 22.0 6.0 — — — — — — Unit mA V µs A µC J J THERMAL CHARACTERISTICS Symbol Item Rth(j-c) Thermal resistance Rth(c-s) Contact thermal resistance Conditions Junction to Case (per 1/2 module) Case to heat sink, grease = 1 W/m·k D(c-s) = 100 µm (per 1/2 module) Unit MECHANICAL CHARACTERISTICS Symbol Mt Ms m CTI da ds LP AK RAA’+KK’ Note 1. Note 2. Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Conditions M8 : Main terminals screw M6 : Mounting screw Tc = 25°C Erec(10%) are the integral of 0.1VR x 0.1IF x dt. Definition of all items is according to IEC 60747, unless otherwise specified. December 2012 HVM-2026-B.doc 2 Unit N·m N·m kg — mm mm nH mΩ < HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 4 Forward Current [A] 1200 Reverse Recovery Energy [J] 1600 Tj = 25°C T j = 125°C 800 400 0 V CC = 2800V -di /dt = 2400 A/µs @125°C L S = 150nH, Tj = 125°C Inductive load 3 E rec 2 1 0 0 1 2 3 4 5 0 400 Forward Voltage [V] 10000 1000 100 Reverse Recovery Current [A] trr 1000 Reverse Recovery Current [A] Reverse Recovery Time [µs] 0.1 100 3200 V CC 3200V, -di /dt < 4kA/µs Tj = 125°C Ir r 1 10 10000 HVM-2026-B.doc 2400 1600 800 0 0 Forward Current [A] December 2012 1600 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) VC C = 2800V -d i/d t = 2400 A/µs @125°C LS = 150nH, Tj = 125°C Inductive load 10 1200 Forward Current [A] REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 800 1000 2000 3000 4000 Reverse Voltage [V] 3 5000 < HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules PERFORMANCE CURVES TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rt h(j-c) = 30.0K/kW Z 1 (t ) th( j c ) i n R 1 exp i 1 t i 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 Time [s] December 2012 HVM-2026-B.doc 4 1 2 3 4 Ri [K/kW] 0.0055 0.2360 0.4680 0.2905 ti [sec] 0.0001 0.0131 0.0878 0.6247 < HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials ・ These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. ・ Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ・ All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. ・ Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/). ・ When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. ・ Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ・ The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. ・ If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. ・ Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ・ Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. December 2012 HVM-2026-B.doc 5