< HIGH VOLTAGE DIODE MODULES > RM1200DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM1200DG-90F IF································································· 1200A VRRM·························································· 4500V 2-element in a Pack High insulated Type Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM December 2012 HVM-2027-B.doc Dimensions in mm 1 < HIGH VOLTAGE DIODE MODULES > RM1200DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules MAXIMUM RATINGS Symbol Item VRRM Repetitive peak reverse voltage IF IFSM I2t Ptot Viso Ve Tj Tjop Tstg Forward current Surge forward current Surge current load integral Maximum power dissipation Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature Conditions Ratings 4500 4400 1200 9.8 480 6250 10200 3500 −50 ~ +150 −50 ~ +125 −55 ~ +125 Tj = −40…+125°C Tj = −50°C DC, Tc = 65°C Tj_start = 125°C, tp = 10 ms, Half-sine wave, VR = 0 V Tc = 25°C RMS, sinusoidal, f = 60 Hz, t = 1 min. RMS, sinusoidal, f = 60 Hz, QPD ≤ 10 pC Unit V A kA kA2s W V V °C °C °C ELECTRICAL CHARACTERISTICS Symbol Item Conditions IRRM Repetitive reverse current VRM = VRRM VFM Forward voltage IF = 1200 A trr Reverse recovery time Irr Reverse recovery current Qr0Hr Reverse recovery charge Erec(10%) Reverse recovery energy (Note 1) Erec Reverse recovery energy VCC = 2800 V IF = 1200 A −di/dt = 3900 A/µs @ Tj = 25°C −di/dt = 3600 A/µs @ Tj = 125°C Ls = 150 nH Inductive load Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min — — — — — — — — — — — — — — Limits Typ — 9.0 2.55 2.85 0.70 0.90 1050 1140 990 1560 1.44 2.25 1.65 2.55 Max 3.0 — — 3.45 — — — — — — — — — — Min — Limits Typ — Max 20.0 K/kW — 16.0 — K/kW Min 7.0 3.0 — 600 26.0 56.0 — — Limits Typ — — 1.0 — — — 15.0 0.09 Max 22.0 6.0 — — — — — — Unit mA V µs A µC J J THERMAL CHARACTERISTICS Symbol Item Rth(j-c) Thermal resistance Rth(c-s) Contact thermal resistance Conditions Junction to Case (per 1/2 module) Case to heat sink, grease = 1 W/m·k D(c-s) = 100 µm (per 1/ 2 module) Unit MECHANICAL CHARACTERISTICS Symbol Mt Ms m CTI da ds LP AK RAA’+KK’ Note 1. Note 2. Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Conditions M8 : Main terminals screw M6 : Mounting screw Tc = 25°C Erec(10%) are the integral of 0.1VR x 0.1IF x dt. Definition of all items is according to IEC 60747, unless otherwise specified. December 2012 HVM-2027-B.doc 2 Unit N·m N·m kg — mm mm nH mΩ < HIGH VOLTAGE DIODE MODULES > RM1200DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 6 Forward Current [A] 1800 Reverse Recovery Energy [J] 2400 Tj = 25 °C Tj = 12 5°C 1200 600 0 VCC = 280 0V -di/dt = 3 600 A/µs @1 25°C LS = 15 0nH , T j = 1 25 °C Indu cti ve lo ad 4.5 Erec 3 1.5 0 0 1 2 3 4 5 0 600 Forward Voltage [V] 10000 VCC = 28 00 V -di/d t = 360 0 A/µs @12 5°C LS = 1 50n H, Tj = 12 5°C In ductive l oa d 4000 VCC 32 00 V, -di /dt < 6kA/µ s Tj = 1 25°C 10 1000 t rr 100 Reverse Recovery Current [A] I rr 100 10 1000 HVM-2027-B.doc 3000 2000 1000 0 10000 0 Forward Current [A] December 2012 2400 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) Reverse Recovery Current [A] Reverse Recovery Time [µs] 100 0.1 1800 Forward Current [A] REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1 1200 1000 2000 3000 4000 Reverse Voltag e [V] 3 5000 < HIGH VOLTAGE DIODE MODULES > RM1200DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules PERFORMANCE CURVES TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 R th(j-c ) = 20.0K/kW Z 1 (t ) th( j c ) i n R 1 exp i 1 t i 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 Time [s] December 2012 HVM-2027-B.doc 4 1 2 3 4 Ri [K/kW] 0.0055 0.2360 0.4680 0.2905 ti [sec] 0.0001 0.0131 0.0878 0.6247 < HIGH VOLTAGE DIODE MODULES > RM1200DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules Keep safety first in your circuit designs! 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ALL RIGHTS RESERVED. December 2012 HVM-2027-B.doc 5