MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK−3 Surface Mount Package These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • Extremely Fast Switching Extremely Low Forward Drop Platinum Barrier with Avalanche Guardrings Pb−Free Packages are Available SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, 20 − 60 VOLTS 1 4 3 Mechanical Characteristics: 4 • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • 1 2 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 3 DPAK CASE 369C MARKING DIAGRAM YWW B 6x0TG Y WW B6x0T x G = Year = Work Week = Device Code = 2, 3, 4, 5, or 6 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 7 1 Publication Order Number: MBRD620CT/D MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TC = 130°C (Rated VR) VRRM VRWM VR Per Diode Per Device MBRD 620CT 630CT 640CT 650CT 660CT 20 30 40 50 60 Unit V IF(AV) 3 6 A Peak Repetitive Forward Current, TC = 130°C (Rated VR, Square Wave, 20 kHz) Per Diode IFRM 6 A Nonrepetitive Peak Surge Current − (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 A Peak Repetitive Reverse Surge Current (2 ms, 1 kHz) IRRM 1 A Operating Junction Temperature (Note 1) TJ −65 to +175 °C Storage Temperature Tstg −65 to +175 °C dv/dt 10,000 V/ms Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case RqJC 6 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W Voltage Rate of Change (Rated VR) THERMAL CHARACTERISTICS PER DIODE Rating ELECTRICAL CHARACTERISTICS PER DIODE Maximum Instantaneous Forward Voltage (Note 3) iF = 3 Amps, TC = 25°C iF = 3 Amps, TC = 125°C iF = 6 Amps, TC = 25°C iF = 6 Amps, TC = 125°C VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C) iR V 0.7 0.65 0.9 0.85 mA 0.1 15 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Rating applies when surface mounted on the minimum pad size recommended. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT ORDERING INFORMATION Package Shipping† DPAK 2500 Tape & Reel DPAK (Pb−Free) 2500 Tape & Reel DPAK−3 2500 Tape & Reel DPAK (Pb−Free) 2500 Tape & Reel DPAK−3 75 Units / Rail MBRD640CTG DPAK−3 (Pb−Free) 75 Units / Rail MBRD640CTT4 DPAK−3 2500 Tape & Reel DPAK−3 (Pb−Free) 2500 Tape & Reel DPAK−3 75 Units / Rail MBRD650CTG DPAK (Pb−Free) 75 Units / Rail MBRD650CTT4 DPAK−3 2500 Tape & Reel DPAK (Pb−Free) 2500 Tape & Reel DPAK−3 75 Units / Rail MBRD660CTG DPAK−3 (Pb−Free) 75 Units / Rail MBRD660CTRL DPAK−3 1800 Tape & Reel DPAK−3 (Pb−Free) 1800 Tape & Reel DPAK−3 2500 Tape & Reel DPAK−3 (Pb−Free) 2500 Tape & Reel Device MBRD620CTT4 MBRD620CTT4G MBRD630CTT4 MBRD630CTT4G MBRD640CT MBRD640CTT4G MBRD650CT MBRD650CTT4G MBRD660CT MBRD660CTRLG MBRD660CTT4 MBRD660CTT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT TYPICAL CHARACTERISTICS 100 100 TJ = 150°C 70 I R , REVERSE CURRENT (mA) 50 30 20 125°C 1.0 75°C 0.1 0.01 25°C 10 0.001 7.0 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) 5.0 60 70 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 3.0 Figure 2. Typical Reverse Current,* Per Leg 125°C 2.0 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 150°C 1.0 TC = 25°C 0.7 75°C 0.5 0.3 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 14 13 12 11 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 SINE WAVE 5 10 IPK/IAV = 20 SQUARE WAVE dc TJ = 150°C 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage, Per Leg Figure 3. Average Power Dissipation, Per Leg http://onsemi.com 4 10 I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 8.0 RATED VOLTAGE APPLIED 7.0 RqJC = 6°C/W 6.0 TJ = 150°C 5.0 SINE WAVE OR SQUARE WAVE 4.0 3.0 dc 2.0 1.0 0 80 90 100 110 120 130 140 150 160 4.0 RqJA = 80°C/W SURFACE MOUNTED ON MIN. PAD SIZE RECOMMENDED TJ = 150°C 3.5 3.0 dc SQUARE WAVE OR SINE WAVE 2.5 VR = 25 V 2.0 1.5 VR = 60 V 1.0 0.5 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 4. Current Derating, Case, Per Leg Figure 5. Current Derating, Ambient, Per Leg 1K C, CAPACITANCE (pF) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT TJ = 25°C 100 10 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance, Per Leg http://onsemi.com 5 70 MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. +− ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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