MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package http://onsemi.com This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS Features • • • • • • Low Forward Voltage 150°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Compact Size Lead Formed for Surface Mount Pb−Free Packages are Available 1 MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • 4 3 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 75 Units Per Plastic Tube Available in 16 mm Tape and Reel, 2500 Units Per 13 in Reel, by Adding a “T4” Suffix to the Part Number ESD Rating: Machine Model = C (> 400 V) Human Body Model = 3B (> 8000 V) 4 1 2 DPAK CASE 369C 3 Y WW G YWW B 835LG = Year = Work Week = Pb−Free Device ORDERING INFORMATION Package Shipping† DPAK 75 Units/Rail MBRD835LG DPAK (Pb−Free) 75 Units/Rail MBRD835LT4 DPAK 2500/Tape & Reel DPAK (Pb−Free) 2500/Tape & Reel Device MBRD835L MBRD835LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 9 1 Publication Order Number: MBRD835L/D MBRD835L MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 35 V Average Rectified Forward Current (At Rated VR, TC = 88°C) IF(AV) 8.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 80°C) IFRM 16 A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 75 A Repetitive Avalanche Current (Current Decaying Linearly to Zero in 1 s, Frequency Limited by TJmax) IAR 2.0 A Storage / Operating Case Temperature Tstg −65 to +150 °C Operating Junction Temperature (Note 1) TJ −65 to +150 °C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance − Junction−to−Case Rating RJC 2.8 °C/W Thermal Resistance − Junction−to−Ambient (Note 2) RJA 80 °C/W Maximum Instantaneous Forward Voltage (Note 3) (iF = 8 Amps, TC = + 25°C) (iF = 8 Amps, TC = +125°C) VF 0.51 0.41 V Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = + 25°C) (Rated dc Voltage, TC = +100°C) IR 1.4 35 mA ELECTRICAL CHARACTERISTICS 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. 2. Rating applies when surface mounted on the minimum pad size recommended. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%. http://onsemi.com 2 MBRD835L IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (mA) TYPICAL CHARACTERISTICS 10 TJ = 125°C 25°C 1 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.6 10 TJ = 125°C 1 75°C 0.1 25°C 0.01 0 Figure 1. Maximum Forward Voltage 0.1 0.2 0.3 0.4 0.5 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.6 Figure 2. Typical Forward Voltage 1000 100 10 100°C I R, REVERSE CURRENT (mA) I R, REVERSE CURRENT (mA) 100 TJ = 125°C 1 25°C 0.1 TJ = 125°C 100°C 10 1 75°C 0.1 0.01 0.001 25°C 0 5 10 15 20 25 VF, REVERSE VOLTAGE (VOLTS) 30 0.01 35 0 Figure 3. Maximum Reverse Current 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 4. Typical Reverse Current http://onsemi.com 3 35 MBRD835L TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) TJ = 25°C TYPICAL MAXIMUM 1000 100 1 10 VR, REVERSE VOLTAGE (VOLTS) 16 14.4 IF(AV), AVERAGE FORWARD CURRENT (AMPS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Maximum and Typical Capacitance TJ = 125°C 12.8 RJA = 6°C/W dc (RESISTIVE LOAD) 11.2 9.6 SQUARE WAVE (CAPACITIVE IPK +5 LOAD) IAV 8 6.4 4.8 10 3.2 1.6 0 20 80 85 90 95 100 105 110 115 TC, CASE TEMPERATURE (°C) 120 125 130 8 TJ = 125°C 7 dc 6 (RESISTIVE LOAD) 5 P F(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS IF(AV), AVERAGE FORWARD CURRENT (AMPS) 4 TJ = 125°C (RESISTIVE LOAD) 3.5 3 SQUARE WAVE 2.5 RJA = 80°C/W SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE (CAPACITIVE IPK +5 LOAD) IAV 2 1.5 10 1 20 0.5 0 0 10 20 (CAPACITIVE IPK +5 LOAD) IAV SQUARE WAVE 3 2 10 1 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 TA, AMBIENT TEMPERATURE (°C) Figure 7. Current Derating 5 dc SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE 4 Figure 6. Current Derating, Infinite Heatsink 4.5 RJA = 40°C/W 30 40 50 60 70 80 90 100 110 120 130 TA, AMBIENT TEMPERATURE (°C) 8 TJ = 125°C 7 (RESISTIVE LOAD) (CAPACITIVE IPK +5 LOAD) IAV 6 SQUARE WAVE dc 5 10 4 20 3 2 1 0 0 Figure 8. Current Derating, Free Air 1.5 3 4.5 6 7.5 9 10.5 12 13.5 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Forward Power Dissipation http://onsemi.com 4 15 MBRD835L PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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