MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Preferred Device SWITCHMODE Schottky Power Rectifier http://onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. 1 4 3 Features Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Short Heat Sink Tab Manufactured − Not Sheared! AEC−Q101 Qualified and PPAP Capable SBRB and SBRD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* Mechanical Characteristics: Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 Weight: 1.7 grams for D2PAK (approximately) 0.4 grams for DPAK (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: Machine Model = C (> 400 V) Human Body Model = 3B (> 8000 V) MARKING DIAGRAM 4 AY WW MBRB1045G AKA 1 3 D2PAK CASE 418B A Y WW MBRB1045 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity 4 1 2 3 DPAK CASE 369C Y WW B1045 G MARKING DIAGRAM YWW B10 45G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 8 1 Publication Order Number: MBRB1045/D MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 135C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 135C IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 (MBRB/SBRB) 70 (MBRD/SBRD) TJ, Tstg −65 to +175 C dv/dt 10000 V/ms Operating Junction and Storage Temperature Range (Note 1) Voltage Rate of Change (Rated VR) A 20 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, (MBRB1045G) Junction−to−Case (Note 2) Junction−to−Ambient (Note 2) (MBRD1045G) Junction−to−Case (Note 2) Junction−to−Ambient (Note 2) Value Unit C/W RqJC RqJA 1.0 50 RqJC RqJA 2.43 68 Symbol Value 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 10 Amps, TJ = 125C) (IF = 20 Amps, TJ = 125C) (IF = 20 Amps, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) IR Unit V 0.57 0.72 0.84 mA 15 0.1 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0% ORDERING INFORMATION Package Shipping† MBRB1045G D2PAK (Pb−Free) 50 Units / Rail SBRB1045G D2PAK (Pb−Free) 50 Units / Rail MBRB1045T4G D2PAK (Pb−Free) 800 Units / Tape & Reel SBRB1045T4G D2PAK (Pb−Free) 800 Units / Tape & Reel MBRD1045G DPAK (Pb−Free) 50 Units / Rail MBRD1045T4G DPAK (Pb−Free) 2,500 Units / Tape & Reel SBRD81045T4G DPAK (Pb−Free) 2,500 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G 100 100 TJ = 150C TJ = 150C 70 100C 50 25C 100C 50 25C 30 30 20 20 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 70 10 7.0 5.0 3.0 2.0 1.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.1 0.1 0.2 0.4 0.6 0.8 1.2 1.0 1.4 0.2 0.4 0.6 0.8 1.2 1.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage 100 100 IR , REVERSE CURRENT (mA) TJ = 150C IR , REVERSE CURRENT (mA) 1.4 125C 10 100C 1.0 75C 0.1 25C 150C 10 125C 1.0 100C 75C 0.1 0.01 0.01 25C 0.001 0.001 0 5.0 10 15 20 25 30 35 40 45 0 50 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current http://onsemi.com 3 45 50 MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G 1400 C, CAPACITANCE (pF) 1200 100 70 50 30 800 600 400 200 0 20 1.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 1000 2.0 3.0 5.0 7.0 10 20 30 50 0 70 100 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Maximum Surge Capability Figure 5. Typical Capacitance 18 RATED VOLTAGE APPLIED 16 14 dc 12 SQUARE WAVE 10 8.0 6.0 4.0 2.0 0 130 20 10 NUMBER OF CYCLES AT 60 Hz PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) IFSM , PEAK HALF-WAVE CURRENT (AMPS) 200 135 140 145 150 155 TC, CASE TEMPERATURE (C) 50 10 9.0 dc 8.0 7.0 SQUARE WAVE 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Figure 6. Current Derating, Case, RqJC = 1.0 C/W 2.0 4.0 6.0 8.0 10 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Forward Power Dissipation http://onsemi.com 4 18 MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 3 A S −T− SEATING PLANE DIM A B C D E F G H J K L M N P R S V K J G D 3 PL 0.13 (0.005) W H M T B M SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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