STB18N55M5, STD18N55M5 STF18N55M5, STP18N55M5 N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 Features Order codes VDSS @TJmax STB18N55M5 STD18N55M5 STF18N55M5 STP18N55M5 RDS(on) max ID 3 1 3 1 DPAK D²PAK 550 V < 0.24 Ω ■ DPAK worldwide best RDS(on) ■ Higher VDSS rating 13 A 3 3 1 ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested 2 1 TO-220FP TO-220 Figure 1. 2 Internal schematic diagram Application $ Switching applications Description ' The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. 3 !-V Device summary Order codes Marking Package STB18N55M5 D²PAK STD18N55M DPAK Packaging Tape and reel 18N55M5 STF18N55M5 TO-220FP STP18N55M5 TO-220 Tube March 2011 Doc ID 17078 Rev 2 1/22 www.st.com 22 Contents STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 .............................................. 9 Doc ID 17078 Rev 2 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID Parameter Unit TO-220, DPAK, D²PAK Gate-source voltage TO-220FP 25 Drain current (continuous) at TC = 25 °C V 13 13 (1) A (1) A Drain current (continuous) at TC = 100 °C 8.3 8.3 IDM (2) Drain current (pulsed) 52 52 (1) A PTOT Total dissipation at TC = 25 °C 90 25 W ID IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 4 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50 V) 200 mJ Peak diode recovery voltage slope 15 V/ns dv/dt (3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 Max. operating junction temperature V - 55 to 50 °C 150 °C 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD ≤13 A, di/dt ≤400 A/µs, VPeak < V(BR)DSS, VDD = 400 V. Table 3. Thermal data Value Symbol Parameter Unit DPAK D²PAK TO-220 TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max Tl Maximum lead temperature for soldering purpose Doc ID 17078 Rev 2 1.39 5 62.5 50 30 °C/W °C/W °C/W 300 °C 3/22 Electrical characteristics 2 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 550 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.18 0.24 Ω Min. Typ. Max. Unit - 1352 38 3.7 - pF pF pF - 98 - pF - 35 - pF - 1.7 - Ω - 31 6.3 14 - nC nC nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 5. Symbol Ciss Coss Crss 3 VGS = 10 V, ID = 6.5 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 440 V RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 440 V, ID = 6.5 A, VGS = 10 V (see Figure 19) 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/22 Doc ID 17078 Rev 2 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Table 6. Symbol td(off) tr tc tf Table 7. Switching times Parameter Test conditions Turn-off delay time Rise time Cross time Fall time VDD = 400 V, ID = 9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18, Figure 23) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 29 9.5 23 13 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 13 52 A A ISD = 13 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 13 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) - 238 2.8 23.5 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 13 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 20) - 278 3.3 24 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 17078 Rev 2 5/22 Electrical characteristics STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK Figure 3. Thermal impedance for TO-220, D²PAK Figure 5. Thermal impedance for DPAK Figure 7. Thermal impedance for TO-220FP AM08661v1 ID (A) Op Lim era ite tion d by in th m is a ax R re n) a is Tj=150°C Tc=25°C Single pulse DS (o 10 10µs 100µs 1ms 1 10ms 0.1 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for DPAK AM08662v1 ID (A) Tj=150°C Tc=25°C Single pulse n) a is 10µs DS (o Op Lim era ite tion d by in th m is a ax R re 10 100µs 1ms 1 10ms 0.1 0.1 Figure 6. 10 1 100 Safe operating area for TO-220FP AM08663v1 ID (A) on ) is Tj=150°C Tc=25°C Single pulse D S( O Li per m at ite io d ni by n m this ax a R rea 10 VDS(V) 1 10µs 100µs 1ms 10ms 0.1 0.01 0.1 6/22 1 10 100 VDS(V) Doc ID 17078 Rev 2 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Figure 8. Output characteristics Figure 9. AM08664v1 ID (A) Electrical characteristics 7.5V Transfer characteristics AM08665v1 ID (A) VGS=10V VDS=20V 7V 20 20 6.5V 15 15 6V 10 10 5.5V 5 5 5V 0 0 0 5 10 15 VDS(V) 3 4 5 6 7 8 9 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM08666v1 VGS (V) VGS VDD=440V ID=6.5A 12 VDS 450 AM08667v1 RDS(on) (Ω) 0.22 400 10 350 300 8 VGS=10V 0.20 0.18 250 6 200 150 4 0.16 0.14 100 2 50 0 0 5 10 15 20 25 30 35 0 Qg(nC) Figure 12. Capacitance variations 0.12 0.10 0 2 4 6 8 10 12 Figure 13. Output capacitance stored energy AM08668v1 C (pF) ID(A) AM08669v1 Eoss (µJ) 4.0 10000 3.5 Ciss 1000 3.0 2.5 2.0 100 Coss 1.0 10 Crss 1 0.1 1.5 1 10 100 VDS(V) Doc ID 17078 Rev 2 0.5 0 0 100 200 300 400 500 VDS(V) 7/22 Electrical characteristics STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Figure 14. Normalized gate threshold voltage vs temperature AM08670v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM08671v1 RDS(on) (norm) ID=250µA 1.10 2.1 ID =6.5A VGS=10V 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 -50 -25 0 25 50 TJ(°C) 75 100 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Switching losses vs gate resistance Figure 17. Normalized BVDSS vs temperature (1) AM08673v1 E (μJ) AM08672v1 BVDSS (norm) 140 120 Eon ID=9A VCL=400V VGS=10V 1.07 ID =1mA 1.05 1.03 100 Eoff 80 1.01 60 0.99 40 0.97 20 0.95 0 0 10 20 30 40 RG(Ω) 0.93 -50 -25 1. Eon including reverse recovery of a SiC diode 8/22 Doc ID 17078 Rev 2 0 25 50 75 100 TJ(°C) STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 23. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 Doc ID 17078 Rev 2 Tfall Tcross --over AM05540v1 9/22 Package mechanical data 4 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/22 Doc ID 17078 Rev 2 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Table 8. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 24. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 17078 Rev 2 11/22 Package mechanical data Table 9. STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° Figure 25. DPAK footprint(a) 6.7 3 3 1.6 2.3 6.7 2.3 1.6 a. All dimension are in millimeters 12/22 Doc ID 17078 Rev 2 AM08850v1 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Package mechanical data Figure 26. DPAK (TO-252) drawing 0068772_G Doc ID 17078 Rev 2 13/22 Package mechanical data Table 10. STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/22 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 17078 Rev 2 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 17078 Rev 2 15/22 Package mechanical data Table 11. STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 16/22 Max. 0.4 0° 8° Doc ID 17078 Rev 2 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Package mechanical data Figure 28. D²PAK (TO-263) drawing 0079457_P Figure 29. D²PAK footprint(b) 16.90 10.30 5.08 1.30 8.90 3.70 Footprint b. All dimension are in millimeters Doc ID 17078 Rev 2 17/22 Packaging mechanical data 5 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 18/22 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty. 1000 P2 1.9 2.1 Bulk qty. 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 17078 Rev 2 Min. Max. 330 13.2 26.4 30.4 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Table 13. Packaging mechanical data DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 17078 Rev 2 18.4 22.4 19/22 Packaging mechanical data STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Figure 30. Tape for DPAK and D²PAK 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 P2 D T E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 D1 P1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 31. Reel for DPAK and D²PAK T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Tape slot In core for Full radius Tape start G measured At hub AM08851v1 20/22 Doc ID 17078 Rev 2 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 6 Revision history Revision history Table 14. Document revision history Date Revision Changes 09-Feb-2010 1 First release. 04-Mar-2011 2 – Document status promoted from preliminary data to datasheet; – Added new package, mechanical data: D²PAK. Doc ID 17078 Rev 2 21/22 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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