STMICROELECTRONICS STF30N65M5

STB30N65M5, STF30N65M5, STI30N65M5
STP30N65M5, STW30N65M5
N-channel 650 V, 0.125 Ω, 22 A, MDmesh™ V Power MOSFET
D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes
VDSS @
TJMAX
RDS(on) max.
710 V
710 V
710 V
710 V
710 V
< 0.139 Ω
< 0.139 Ω
< 0.139 Ω
< 0.139 Ω
< 0.139 Ω
STB30N65M5
STF30N65M5
STI30N65M5
STP30N65M5
STW30N65M5
ID
3
1
22 A
22 A(1)
22 A
22 A
22 A
D²PAK
TO-220FP
1. Limited only by maximum temperature allowed
Worldwide best RDS(on)*area
■
Higher VDSS rating
■
Excellent switching performance
■
Easy to drive
■
100% avalanche tested
■
High dv/dt capability
2
I²PAK
3
1
■
3
12
3
1
2
2
TO-220
Figure 1.
3
1
TO-247
Internal schematic diagram
$
Applications
■
Switching applications
'
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
Device summary
3
!-V
Order codes
Marking
Package
Packaging
STB30N65M5
STF30N65M5
STI30N65M5
STP30N65M5
STW30N65M5
30N65M5
30N65M5
30N65M5
30N65M5
30N65M5
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Tape and reel
Tube
Tube
Tube
Tube
September 2011
Doc ID 15331 Rev 3
1/22
www.st.com
22
Contents
STB/F/I/P/W30N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
.......................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
.............................................. 9
Doc ID 15331 Rev 3
STB/F/I/P/W30N65M5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
VGS
ID
Parameter
Unit
TO-220, D²PAK
TO-247, I²PAK
Gate-source voltage
TO-220FP
± 25
Drain current (continuous) at TC = 25 °C
22
V
22
(1)
A
(1)
A
Drain current (continuous) at TC = 100 °C
13
13
IDM (2)
Drain current (pulsed)
88
88 (1)
A
PTOT
Total dissipation at TC = 25 °C
140
30
W
ID
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
EAS
dv/dt (3)
7
A
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
500
mJ
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
Tstg
Storage temperature
Tj
2500
V
- 55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 21 A, di/dt = 400 A/µs, VPeak < V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
D²PAK TO-220FP I²PAK TO-220 TO-247
Rthj-case
Thermal resistance junctioncase max
Rthj-amb
Thermal resistance junctionambient max
Rthj-pcb
Thermal resistance junction-pcb
max
Tl
Maximum lead temperature for
soldering purpose
0.83
3.6
0.83
62.5
50
30
Doc ID 15331 Rev 3
°C/W
°C/W
°C/W
300
°C
3/22
Electrical characteristics
2
STB/F/I/P/W30N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
Min.
Typ.
Max.
Unit
650
V
IDSS
VDS = 650 V
Zero gate voltage
drain current (VGS = 0) VDS = 650 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
100
nA
4
5
V
0.125
0.139
Ω
Min.
Typ.
Max.
Unit
-
pF
pF
pF
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Table 5.
Symbol
3
VGS = 10 V, ID = 11 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
2880
68
5
Co(tr)(1)
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 520 V
-
190
-
pF
Co(er)(2)
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 520 V
-
65
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.6
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 11 A,
VGS = 10 V
(see Figure 20)
-
64
16
25
-
nC
nC
nC
Ciss
Coss
Crss
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/22
Doc ID 15331 Rev 3
STB/F/I/P/W30N65M5
Table 6.
Symbol
td(off)
tr
tc
tf
Table 7.
Electrical characteristics
Switching times
Parameter
Test conditions
Turn-off delay time
Rise time
Cross time
Fall time
VDD = 400 V, ID = 14 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Typ.
-
50
8
20
10
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Min.
Test conditions
Max. Unit
-
22
88
A
A
ISD = 22 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 21)
-
336
6
32
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 21)
-
395
7
34
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15331 Rev 3
5/22
Electrical characteristics
STB/F/I/P/W30N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK, I²PAK
Figure 3.
Thermal impedance for TO-220,
D²PAK, I²PAK
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Thermal impedance for TO-247
AM05462v1
ai
s
(o
DS
Op
Lim erat
ite ion
d b in
y m this
ax ar
R e
n)
ID
(A)
10
10µs
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Sinlge
pulse
0.1
0.1
Figure 4.
10
1
100
Safe operating area for TO-220FP
AM05463v1
ID
(A)
10
VDS(V)
is
ea )
ar S(on
D
R
t
in ax
n
io y m
t
b
ra
pe ed
O imit
L
s
hi
10µs
100µs
1
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Sinlge
pulse
0.01
0.1
Figure 6.
10
1
100
VDS(V)
Safe operating area for TO-247
AM05464v1
1
n)
(o
DS
10
Op
Lim era
ite tion
d
by in th
m is
ax ar
R e
a
is
ID
(A)
10µs
100µs
1ms
Tj=150°C
Tc=25°C
0.1
10ms
Sinlge
pulse
0.01
0.1
6/22
1
10
100
VDS(V)
Doc ID 15331 Rev 3
STB/F/I/P/W30N65M5
Figure 8.
Electrical characteristics
Output characteristics
Figure 9.
AM05465v1
ID
(A) VGS=10V
45
7V
40
Transfer characteristics
AM05466v1
ID
(A)
45
VDS=15V
40
35
35
30
30
25
25
20
20
6V
15
15
10
10
5
5
0
0
5V
5
10
20
15
25
0
0
30 VDS(V)
2
4
8
6
10 VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM05471v1
VGS
(V)
VDS
VGS
VDD=520V
12
480
0.14
10
400
0.13
8
320
0.12
6
240
0.11
4
160
0.10
2
80
0.09
ID=11A
0
0
10
20
30
40
50
60
0
70 Qg(nC)
Figure 12. Capacitance variations
0.08
0
5
10
15
20
25
ID(A)
Figure 13. Output capacitance stored energy
AM05469v1
C
(pF)
AM05468v1
RDS(on)
(Ω)
AM05470v1
Eoss
(µJ)
12
10000
Ciss
1000
10
8
6
100
Coss
4
10
Crss
1
0.1
1
10
100
VDS(V)
Doc ID 15331 Rev 3
2
0
0
100
200 300
400 500 600
VDS(V)
7/22
Electrical characteristics
STB/F/I/P/W30N65M5
Figure 14. Normalized gate threshold voltage
vs temperature
AM05473v1
VGS(th)
(norm)
1.10
Figure 15. Normalized on resistance vs
temperature
AM05474v1
RDS(on)
(norm)
2.1
1.9
1.7
1.00
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
0
25
50
TJ(°C)
75 100
Figure 16. Source-drain diode forward
characteristics
0
25
50
75 100
TJ(°C)
Figure 17. Normalized BVDSS vs temperature
AM05475v1
VSD
(V)
0.5
-50 -25
TJ=-50°C
1.2
AM05467v1
BVDSS
(norm)
1.07
1.05
1.0
1.03
0.8
1.01
TJ=25°C
0.6
0.99
TJ=150°C
0.4
0.97
0.2
0.95
0
0
10
30
20
40
50 ISD(A)
0.93
-50 -25
Figure 18. Switching losses vs gate resistance
(1)
E
(μJ)
300
AM05472v1
Eon
ID=14A
VCL=400V
VGS=10V
250
Eoff
200
150
100
50
0
0
10
20
30
40
RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/22
Doc ID 15331 Rev 3
0
25
50
75 100 125 TJ(°C)
STB/F/I/P/W30N65M5
3
Test circuits
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
Figure 22. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 23. Unclamped inductive waveform
V(BR)DSS
AM01471v1
Figure 24. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
VD
90%Vds
90%Id
Tdelay-off
-off
IDM
Vgs
90%Vgs
on
ID
Vgs(I(t))
))
VDD
VDD
10%Id
10%Vds
Vds
Trise
AM01472v1
Doc ID 15331 Rev 3
Tfall
Tcross --over
AM05540v2
9/22
Package mechanical data
4
STB/F/I/P/W30N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACKm is an ST trademark.
10/22
Doc ID 15331 Rev 3
STB/F/I/P/W30N65M5
Table 8.
Package mechanical data
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
8°
Doc ID 15331 Rev 3
11/22
Package mechanical data
STB/F/I/P/W30N65M5
Figure 25. D²PAK (TO-263) drawing
0079457_S
Figure 26. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
a. All dimensions are in millimeters
12/22
Doc ID 15331 Rev 3
Footprint
STB/F/I/P/W30N65M5
Table 9.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Figure 27. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 15331 Rev 3
13/22
Package mechanical data
Table 10.
STB/F/I/P/W30N65M5
I²PAK (TO-262) mechanical data
mm.
DIM.
min.
typ
max.
A
4.40
4.60
A1
2.40
2.72
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
c2
1.23
1.32
D
8.95
9.35
e
2.40
2.70
e1
4.95
5.15
E
10
10.40
L
13
14
L1
3.50
3.93
L2
1.27
1.40
Figure 28. I²PAK (TO-262) drawing
0004982_Rev_H
14/22
Doc ID 15331 Rev 3
STB/F/I/P/W30N65M5
Table 11.
Package mechanical data
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 15331 Rev 3
15/22
Package mechanical data
STB/F/I/P/W30N65M5
Figure 29. TO-220 type A drawing
0015988_typeA_Rev_S
16/22
Doc ID 15331 Rev 3
STB/F/I/P/W30N65M5
Table 12.
Package mechanical data
TO-247 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.50
Doc ID 15331 Rev 3
17/22
Package mechanical data
STB/F/I/P/W30N65M5
Figure 30. TO-247 drawing
0075325_F
18/22
Doc ID 15331 Rev 3
STB/F/I/P/W30N65M5
5
Packaging mechanical data
Packaging mechanical data
Table 13.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Doc ID 15331 Rev 3
Min.
Max.
330
13.2
26.4
30.4
19/22
Packaging mechanical data
STB/F/I/P/W30N65M5
Figure 31. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 32. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
20/22
Doc ID 15331 Rev 3
STB/F/I/P/W30N65M5
6
Revision history
Revision history
Table 14.
Document revision history
Date
Revision
16-Jan-2009
1
First release
21-Sep-2009
2
Document status promoted from preliminary data to datasheet.
3
Co(er) and Co(tr) values changed in Table 5: Dynamic
Table 6: Switching times parameters updates
Figure 24: Switching time waveform has been corrected
Minor text changes
Section 4: Package mechanical data has been modified. Added:
– Table 8: D²PAK (TO-263) mechanical data, Figure 25: D²PAK (TO263) drawing and Figure 26: D²PAK footprint;
– Table 9: TO-220FP mechanical data,and Figure 27: TO-220FP
drawing;
– Table 10: I²PAK (TO-262) mechanical data,and Figure 28: I²PAK
(TO-262) drawing;
– Table 11: TO-220 type A mechanical data,and Figure 29: TO-220
type A drawing;
– Table 12: TO-247 mechanical data,and Figure 30: TO-247
drawing;
Section 5: Packaging mechanical data has been modified. Added:
– Table 13: D²PAK (TO-263) tape and reel mechanical data,
Figure 31: Tape and Figure 32: Reel;
22-Sep-2011
Changes
Doc ID 15331 Rev 3
21/22
STB/F/I/P/W30N65M5
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