STMICROELECTRONICS STW26NM60N

STB26NM60N, STF26NM60N, STI26NM60N
STP26NM60N, STW26NM60N
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET
in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
Type
VDSS
RDS(on)
max
ID
STB26NM60N
600 V
< 0.165 Ω
20 A
STF26NM60N
600 V
< 0.165 Ω
20 A
STI26NM60N
600 V
< 0.165 Ω
20 A
STP26NM60N
600 V
< 0.165 Ω
20 A
STW26NM60N
600 V
< 0.165 Ω
20 A
2
TO-220FP
3
3
12
3
1
I²PAK
2
1
TO-220
TAB
3
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
2
1
Figure 1.
3
1
D²PAK
Application
■
TAB
TAB
TO-247
Internal schematic diagram
Switching applications
$4!"
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET applies a new vertical structure to the
company’s strip layout to yield a device with one
of the world’s lowest on-resistance and gate
charge, making it suitable for the most demanding
high-efficiency converters.
'
3
3#
Table 1.
Device summary
Order codes
Package
Packaging
STB26NM60N
D²PAK
Tape and reel
STF26NM60N
TO-220FP
STI26NM60N
Marking
26NM60N
I²PAK
Tube
STP26NM60N
TO-220
STW26NM60N
TO-247
June 2012
This is information on a product in full production.
Doc ID 15642 Rev 5
1/23
www.st.com
23
Contents
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................ 7
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
D²PAK, I²PAK,
TO-220, TO-247
VDS
Drain-source voltage
600
VGS
Gate-source voltage
± 25
Unit
TO-220FP
V
V
(1)
ID
Drain current (continuous) at TC = 25 °C
20
ID
Drain current (continuous) at TC = 100 °C
12.6
12.6 (1)
A
Drain current (pulsed)
80
80(1)
A
Total dissipation at TC = 25 °C
140
35
W
Derating factor
1.12
0.28
W/°C
IDM
(2)
PTOT
dv/dt (3)
Peak diode recovery voltage slope
A
15
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
Tstg
Storage temperature
Tj
20
V/ns
2500
Max. operating junction temperature
V
–55 to 150
°C
150
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-247 TO-220 I²PAK D²PAK TO-220FP
Rthj-case
Thermal resistance junctioncase max
Rthj-amb
Thermal resistance junctionambient max
Rthj-pcb(1)
50
Thermal resistance junction-pcb
max
0.89
3.6
°C/W
62.5
62.5
°C/W
30
°C/W
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Doc ID 15642 Rev 5
3/23
Electrical ratings
Table 4.
Symbol
4/23
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Avalanche characteristics
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting TJ=25 °C, ID=IAS, VDD=50 V)
Doc ID 15642 Rev 5
Value
Unit
6
A
610
mJ
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
VDS = 600 V, TC = 125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±0.1
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 10 A
V(BR)DSS
Table 6.
Symbol
Ciss
Coss
Crss
Coss eq. (1)
Qg
Qgs
Qgd
Rg
600
2
V
3
0.135 0.165
Ω
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
-
pF
pF
pF
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
1800
115
1.1
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
-
310
-
pF
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 20 A,
VGS = 10 V,
(see Figure 19)
-
60
8.5
30
-
nC
nC
nC
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
-
2.8
-
Ω
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 7.
Symbol
td(on)
tr
td(off)
tf
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 10 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Doc ID 15642 Rev 5
Min.
Typ.
-
13
25
85
50
Max. Unit
-
ns
ns
ns
ns
5/23
Electrical characteristics STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Typ.
Max
Unit
-
20
80
A
A
1.5
V
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 20 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 20)
-
370
5.8
31.6
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
-
450
7.5
32.5
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
6/23
Min.
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK and I²PAK
Figure 3.
Thermal impedance for TO-220,
D²PAK and I²PAK
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Thermal impedance for TO-247
AM03314v1
ID
(A)
Op
Lim era
ite tion
d b in
y m this
ax ar
R e
DS
(o
n)
ai
s
1µs
10
10µs
100µs
1ms
1
10ms
Tj=150°C
Tc=25°C
Sinlge
pulse
0.1
0.1
10
1
Figure 4.
100
VDS(V)
Safe operating area for TO-220FP
AM03315v1
)
on
S(
O
100µs
Li
1
10µs
m
10
pe
ra
ite tion
d
by in t
m his
ax a
RD rea
is
ID
(A)
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Sinlge
pulse
0.01
0.1
Figure 6.
10
1
100
VDS(V)
Safe operating area for TO-247
AM03316v1
n)
(o
DS
10
Op
Lim era
ite tion
d
by in th
m is
ax a r
R ea
is
ID
(A)
1
10µs
100µs
1ms
Tj=150°C
Tc=25°C
0.1
10ms
Sinlge
pulse
0.01
0.1
1
10
100
VDS(V)
Doc ID 15642 Rev 5
7/23
Electrical characteristics STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Figure 8.
Output characteristics
Figure 9.
Figure 10. Transconductance
Figure 11. Static drain-source on-resistance
AM03318v1
GFS
(S)
Transfer characteristics
TJ=-50°C
AM03317v1
RDS(on)
(Ω)
0.16
VGS=10V
8.5
TJ=25°C
0.15
6.5
0.14
TJ=150°C
0.13
4.5
0.12
2.5
0.11
0.5
0
15
10
5
20
0.1
ID(A)
0
10
5
15
20
ID(A)
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
AM03320v1
VGS
(V)
VDD=480V
12
ID=20A
AM03319v1
C
(pF)
10000
10
Ciss
1000
8
6
100
Coss
4
10
Crss
2
0
0
8/23
10
20
30
40
50
60
Qg(nC)
Doc ID 15642 Rev 5
1
0.1
1
10
100
VDS(V)
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics
Figure 14. Normalized gate threshold voltage
vs temperature
AM03321v1
VGS(th)
(norm)
1.1
Figure 15. Normalized on resistance vs
temperature
AM03322v1
RDS(on)
(norm)
2.1
ID = 250 µA
VGS = 10 V
1.0
1.7
0.9
1.3
0.8
0.9
0.7
-50 -25
0
25
50
75 100
TJ(°C)
Figure 16. Source-drain diode forward
characteristics
0
25
50
75 100
TJ(°C)
Figure 17. Normalized BVDSS vs temperature
AM03324v1
VSD
(V)
0.5
-50 -25
AM09028v1
VDS
(norm)
TJ=-50°C
ID=1mA
1.10
1.08
1.2
1.06
TJ=25°C
1.0
1.04
1.02
0.8
TJ=150°C
1.00
0.98
0.6
0.96
0.4
0
0.94
0.92
-50 -25
5
10
15
ISD(A)
Doc ID 15642 Rev 5
0
25
50
75 100
TJ(°C)
9/23
Test circuits
3
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 22. Unclamped inductive waveform
AM01471v1
Figure 23. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
10/23
0
Doc ID 15642 Rev 5
10%
AM01473v1
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 15642 Rev 5
11/23
Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Table 9.
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
12/23
Max.
0.4
0°
8°
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data
Figure 24. D²PAK (TO-263) drawing
0079457_T
Figure 25. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
Doc ID 15642 Rev 5
13/23
Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Table 10.
I²PAK (TO-262) mechanical data
mm.
DIM.
min.
14/23
typ
max.
A
4.40
4.60
A1
2.40
2.72
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
c2
1.23
1.32
D
8.95
9.35
e
2.40
2.70
e1
4.95
5.15
E
10
10.40
L
13
14
L1
3.50
3.93
L2
1.27
1.40
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data
Figure 26. I²PAK (TO-262) drawing
0004982_Rev_H
Doc ID 15642 Rev 5
15/23
Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Table 11.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
16/23
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 15642 Rev 5
17/23
Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Table 12.
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
18/23
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data
Figure 28. TO-220FP drawing
7012510_Rev_K_B
Doc ID 15642 Rev 5
19/23
Packaging mechanical data
5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N,
Packaging mechanical data
Table 13.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
20/23
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Doc ID 15642 Rev 5
Min.
Max.
330
13.2
26.4
30.4
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Packaging mechanical
Figure 29. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 30. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 15642 Rev 5
21/23
Revision history
6
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Revision history
Table 14.
22/23
Document revision history
Date
Revision
Changes
29-Apr-2009
1
First release
17-Dec-2009
2
Added new package, mechanical data: D²PAK
20-Jun-2011
3
Inserted device in I2PAK.
13-Mar-2012
4
Updated PTOT and derating factor in Table 2.
Update Rthj-case for TO-220FP in Table 3.
Update Figure 12 and Figure 17.
Update Section 5: Packaging mechanical data.
20-Jun-2012
5
Updated title on the coverpage.
Minor text changes.
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID 15642 Rev 5
23/23