STD3LN62K3, STF3LN62K3 STP3LN62K3, STU3LN62K3 N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3™ Power MOSFET DPAK, TO-220FP, TO-220, IPAK Features Order codes STD3LN62K3 STF3LN62K3 STP3LN62K3 STU3LN62K3 VDSS 620 V RDS(on) max ID PD <3Ω 2.5 A 2.5 A(1) 2.5 A 2.5 A 45 W 20 W 45 W 45 W 3 3 2 1 1 DPAK IPAK 1. Limited by package 3 ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected 1 3 2 1 TO-220FP TO-220 Figure 1. 2 Internal schematic diagram D(2) Application Switching applications Description G(1) These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. S(3) AM01476v1 Device summary Order codes Marking Package Packaging DPAK Tape and reel STD3LN62K3 STF3LN62K3 TO-220FP 3LN62K3 STP3LN62K3 TO-220 STU3LN62K3 IPAK February 2011 Doc ID 18452 Rev 1 Tube 1/21 www.st.com 21 Contents STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 9 Doc ID 18452 Rev 1 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter DPAK TO-220 IPAK VDS Drain-source voltage (VGS = 0) 620 VGS Gate- source voltage ± 30 ID ID Drain current (continuous) at TC = 25 °C Unit TO-220FP 2.5 V V 2.5 (1) A (1) A Drain current (continuous) at TC = 100 °C 1.6 1.6 IDM (2) Drain current (pulsed) 10 10(1) A PTOT Total dissipation at TC = 25 °C 45 20 W 0.36 0.16 W/°C Derating factor VESD(G-S) dv/dt (3) Gate source ESD (HBM-C = 100 pF, R = 1.5 kΩ) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 V 12 V/ns 2500 V -55 to 150 °C 150 °C TO-220 DPAK IPAK TO-220FP Unit Max. operating junction temperature 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 2.5 A, di/dt ≤ 400 A/µs, peak VDS < V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max Rthj-amb Thermal resistance junction-amb max 62.5 Maximum lead temperature for soldering purpose 300 Tl Table 4. 2.78 6.25 50 °C/W °C/W 100 62.5 300 °C/W °C Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 90 mJ Doc ID 18452 Rev 1 3/21 Electrical characteristics 2 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on Static drain-source on resistance Symbol Ciss Coss Crss Typ. Max. Unit 620 V 1 50 µA µA ± 10 µA 3.75 4.5 V 2.5 3 Ω VGS = ± 20 V VGS(th) Table 6. Min. 3 VGS = 10 V, ID = 1.25 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Co(tr)(1) Eq. capacitance time related Co(er)(2) Eq. capacitance energy related Test conditions Min. Typ. Max. Unit VDS = 50 V, f = 1 MHz, VGS = 0 - 386 30 5 - pF pF pF - 20 - pF - 28 - pF VGS = 0, VDS = 0 to 496 V RG Intrinsic gate resistance f = 1 MHz open drain - 7 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 496 V, ID = 2.5 A, VGS = 10 V (see Figure 20) - 17 2.7 10.7 - nC nC nC 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/21 Doc ID 18452 Rev 1 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Table 7. Symbol td(on) tr td(off) tf Table 8. Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 310 V, ID =1.25 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 9 7 30 27 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 2.5 10 A A ISD = 2.5 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 24) - 240 1200 10 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 24) - 265 1400 11 ns nC A Min. Typ. 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 9. Symbol BVGSO(1) Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs= ± 1 mA (open drain) 30 Max. Unit - V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 18452 Rev 1 5/21 Electrical characteristics STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 5. Thermal impedance for TO-220FP AM08936v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 is 1 0.1 in ax n) 100µs o S( D R 1ms n m tio by ra pe ited O m Li 0.01 0.1 Figure 4. th 10µs is ea ar 10ms 10 1 100 VDS(V) Safe operating area for TO-220FP AM08937v1 ID (A) 10µs n) (o DS Op Lim era ite tion d by in th m is ax ar R ea is 10 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for DPAK, IPAK Figure 7. AM08938v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 ) S( on 1ms 10ms Li O D 100µs m 1 pe ra ite tion d by in t m his ax a R rea is 10µs 0.1 0.01 0.1 6/21 1 10 100 VDS(V) Doc ID 18452 Rev 1 Thermal impedance for DPAK, IPAK STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Figure 8. Output characteristics Electrical characteristics Figure 9. AM08939v1 ID (A) Transfer characteristics AM08940v1 ID (A) 4.0 6 VGS=10V VDS=15V 3.5 5 3.0 7V 4 2.5 3 2.0 1.5 2 6V 1.0 1 0.5 0 0 10 5 15 5V 25 VDS(V) 20 0 0 1 2 3 4 5 6 7 8 9 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM08941v1 VGS (V) VDS 12 VGS VDD=496V ID=2.5A 500 AM08942v1 RDS(on) (Ω) 2.9 VGS=10V 2.8 10 400 2.7 8 300 6 2.6 2.5 200 4 2.4 100 2 0 0 10 5 15 0 Qg(nC) Figure 12. Capacitance variations 2.2 0 0.5 1.0 1.5 2.0 2.5 ID(A) Figure 13. Output capacitance stored energy AM08943v1 C (pF) 2.3 AM08944v1 Eoss (µJ) 4 1000 Ciss 3 100 2 Coss 10 1 Crss 1 0.1 1 10 100 VDS(V) Doc ID 18452 Rev 1 0 0 100 200 300 400 500 VDS(V) 7/21 Electrical characteristics STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Figure 14. Normalized gate threshold voltage vs temperature AM08945v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM08946v1 RDS(on) (norm) ID=1.2A VGS=10V 1.10 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 25 -25 75 125 TJ(°C) Figure 16. Normalized BVDSS vs temperature AM08947v1 BVDSS (norm) 0.0 -75 -25 25 75 125 TJ(°C) Figure 17. Source-drain diode forward characteristics AM08948v1 VSD (V) 1.0 1.10 TJ=-50°C 0.9 1.05 0.8 TJ=25°C 0.7 1.00 0.6 TJ=150°C 0.95 0.5 0.90 -75 0.4 25 -25 75 125 TJ(°C) Figure 18. Maximum avalanche energy vs temperature AM08949v1 EAS (mJ) 100 90 ID=2.5 A VDD=50 V 80 70 60 50 40 30 20 10 0 0 8/21 20 40 60 80 100 120 140 TJ(°C) Doc ID 18452 Rev 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ISD(A) STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 18452 Rev 1 10% AM01473v1 9/21 Package mechanical data 4 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/21 Doc ID 18452 Rev 1 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Table 10. Package mechanical data DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R V2 0.20 0° 8° Doc ID 18452 Rev 1 11/21 Package mechanical data STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Figure 25. DPAK (TO-252) drawing 0068772_G 12/21 Doc ID 18452 Rev 1 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Table 11. Package mechanical data IPAK (TO-251) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 B5 0.3 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10 o Doc ID 18452 Rev 1 1.00 13/21 Package mechanical data STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Figure 26. IPAK (TO-251) drawing 0068771_H 14/21 AM09214V1 Doc ID 18452 Rev 1 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Table 12. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 18452 Rev 1 15/21 Package mechanical data STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S 16/21 Doc ID 18452 Rev 1 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Table 13. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 28. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 18452 Rev 1 17/21 Packaging mechanical data 5 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Packaging mechanical data Table 14. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 Figure 29. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 a. All dimension are in millimeters 18/21 Doc ID 18452 Rev 1 AM08850v1 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Packaging mechanical data Figure 30. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 31. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 18452 Rev 1 19/21 Revision history 6 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Revision history Table 15. 20/21 Document revision history Date Revision 04-Feb-2011 1 Changes First release. Doc ID 18452 Rev 1 STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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