STMICROELECTRONICS STTH16003TV1

STTH16003
High frequency secondary rectifier
Features
■
Combines highest recovery and reverse
voltage performance
■
Ultra-fast, soft and noise-free recovery
■
Insulated package: ISOTOP
– insulated voltage: 2500 V rms
– capacitance: < 45 pF
■
Low inductance and low capacitance allow
simplified layout
A1
K1
A2
K2
K1
A1
Description
K2
Dual rectifiers suited for switch mode power
supply and high frequency DC to DC converters.
Packaged in ISOTOP, this device is intended for
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecom power supplies.
A2
ISOTOP™
STTH16003TV1
Table 1.
Device summary
IF(AV)
2 x 60 A
VRRM
300 V
Tj
150 °C
VF (typ)
0.95 V
trr (typ)
80 ns
TM: ISOTOP is a registered trademark of
STMicroelectronics
June 2008
Rev 5
1/7
www.st.com
7
Characteristics
STTH16003
1
Characteristics
Table 2.
Absolute ratings (limiting values, per diode, Tamb = 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
300
V
IF(RMS)
RMS forward current
180
A
60
160
A
800
A
5
A
-55 to + 150
°C
150
°C
Maximum
Unit
δ = 0.5
IF(AV)
Average forward current
Tc = 85°C
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
IRSM
Non repetitive peak reverse current
tp = 100 µs square
Tstg
Storage temperature range
Tj
Table 3.
Per diode
Per device
Maximum operating junction temperature
Thermal parameters
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Per diode
0.7
Total
0.4
°C/W
0.1
When the diodes 1 and 2 are used simultaneously:
Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
Test conditions
Tj = 25 °C
Tj= 125 °C
Tj = 25 °C
Tj = 125 °C
Min.
VR = 300 V
0.2
Max.
Unit
200
µA
2
mA
1.2
IF = 80 A
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
1. to evaluate the maximum conduction losses use the following equation:
P = 0.75 x IF(AV) + 0.0025 IF2(RMS)
2/7
Typ
V
0.8
0.95
STTH16003
Table 5.
Characteristics
Recovery characteristics
Symbol
Test conditions
Parameter
trr
Reverse recovery time
Tj = 25 °C
Forward recovery time
tfr
VFP
Forward recovery voltage
IRM
Reverse recovery current
Sfactor
Figure 1.
100
90
80
70
60
50
40
30
20
10
0
Max.
Unit
IF = 0.5 A, Irr = 0.25 A
IR = 1 A
60
ns
IF = 1 A, dIF/dt = 50 A/µs,
VR = 30 V
80
ns
1000
ns
5
V
16
A
Tj = 25 °C
dIF/dt = 200 A/µs
IF = 80 A
VFR = 1.1 x VFmax
Tj = 125 °C
IF = 60 A, dIF/dt = 200 A/µs,
Vcc = 200 V
Conduction losses versus
average current (per diode)
Figure 2.
Typ
0.3
-
Forward voltage drop versus
forward current (maximum values,
per diode)
IFM(A)
P1(W)
δ = 0.05
δ = 0.2
δ = 0.1
δ = 0.5
200
δ=1
Tj=125°C
(Typical values)
100
Tj=25°C
Tj=125°C
10
T
δ=tp/T
IF(av) (A)
0
10
Figure 3.
20
30
40
50
60
70
VFM(V)
tp
80
90
1
0.0
100
0.2
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Peak reverse recovery current
versus dIF/dt (90% confidence, per
diode)
IRM(A)
Zth(j-c)/Rth(j-c)
1.0
30
0.8
25
0.6
Min.
VR=200V
Tj=125°C
IF=IF(av)
20
δ = 0.5
IF=2xIF(av)
IF=0.5xIF(av)
15
0.4
δ = 0.2
10
δ = 0.1
T
0.2
5
Single pulse
0.0
1E-3
tp(s)
1E-2
1E-1
δ=tp/T
1E+0
dIF/dt(A/µs)
tp
5E+0
0
0
50
100 150 200 250 300 350 400 450 500
3/7
Characteristics
Figure 5.
STTH16003
Reverse recovery time versus
dIF/dt (90% confidence, per diode)
trr(ns)
240
220
200
180
160
140
120
100
80
60
40
20
0
Softness factor (tb/ta) versus dIF/dt
(typical values, per diode)
Figure 6.
S factor
0.6
VR=200V
Tj=125°C
VR=200V
Tj=125°C
0.5
IF=2xIF(av)
0.4
IF=IF(av)
0.3
IF=0.5xIF(av)
0.2
0.1
dIF/dt(A/µs)
0
50
Figure 7.
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
Figure 9.
100 150 200 250 300 350 400 450 500
0.0
dIF/dt(A/µs)
0
50
Relative variation of dynamic
Figure 8.
parameters versus junction
temperature (reference: Tj = 125°C)
100 150 200 250 300 350 400 450 500
Transient peak forward voltage
versus dIF/dt (90% confidence, per
diode)
VFP(V)
8
IF=IF(av)
Tj=125°C
7
S factor
6
5
4
3
IRM
2
1
Tj(°C)
50
75
100
125
0
dIF/dt(A/µs)
0
50
100 150 200 250 300 350 400 450 500
Forward recovery time versus dIF/dt (90% confidence, per diode)
tfr(ns)
1000
900
800
700
600
500
400
300
200
100
0
4/7
VFR=1.1 x VF max.
IF=IF(av)
Tj=125°C
dIF/dt(A/µs)
0
50 100 150 200 250 300 350 400 450 500
STTH16003
2
Package information
Package information
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.9 to 1.2 N·m
●
Epoxy meets UL 94,V0
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
Table 6.
ISOTOP dimensions
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E
G2
A
C
A1
C2
E2
F1
F
P1
D
G
S
D1
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
B
ØP
G1
E1
5/7
Ordering information
3
STTH16003
Ordering information
Table 7.
Ordering information
Order code
Marking
STTH16003TV1 STTH16003TV1
4
Weight
Base qty
Delivery mode
ISOTOP
27 g
(without screws)
10
(with screws)
Tube
Revision history
Table 8.
6/7
Package
Document revision history
Date
Revision
Oct-1999
4D
25-Jun-2008
5
Description of changes
Last issue.
Reformatted to current standards. Corrected marking in Table 7
STTH16003
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
7/7