STTH16003 High frequency secondary rectifier Features ■ Combines highest recovery and reverse voltage performance ■ Ultra-fast, soft and noise-free recovery ■ Insulated package: ISOTOP – insulated voltage: 2500 V rms – capacitance: < 45 pF ■ Low inductance and low capacitance allow simplified layout A1 K1 A2 K2 K1 A1 Description K2 Dual rectifiers suited for switch mode power supply and high frequency DC to DC converters. Packaged in ISOTOP, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. A2 ISOTOP™ STTH16003TV1 Table 1. Device summary IF(AV) 2 x 60 A VRRM 300 V Tj 150 °C VF (typ) 0.95 V trr (typ) 80 ns TM: ISOTOP is a registered trademark of STMicroelectronics June 2008 Rev 5 1/7 www.st.com 7 Characteristics STTH16003 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, Tamb = 25 °C unless otherwise stated) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) RMS forward current 180 A 60 160 A 800 A 5 A -55 to + 150 °C 150 °C Maximum Unit δ = 0.5 IF(AV) Average forward current Tc = 85°C IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal IRSM Non repetitive peak reverse current tp = 100 µs square Tstg Storage temperature range Tj Table 3. Per diode Per device Maximum operating junction temperature Thermal parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Per diode 0.7 Total 0.4 °C/W 0.1 When the diodes 1 and 2 are used simultaneously: Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4. Symbol Static electrical characteristics (per diode) Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj= 125 °C Tj = 25 °C Tj = 125 °C Min. VR = 300 V 0.2 Max. Unit 200 µA 2 mA 1.2 IF = 80 A 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % 1. to evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.0025 IF2(RMS) 2/7 Typ V 0.8 0.95 STTH16003 Table 5. Characteristics Recovery characteristics Symbol Test conditions Parameter trr Reverse recovery time Tj = 25 °C Forward recovery time tfr VFP Forward recovery voltage IRM Reverse recovery current Sfactor Figure 1. 100 90 80 70 60 50 40 30 20 10 0 Max. Unit IF = 0.5 A, Irr = 0.25 A IR = 1 A 60 ns IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V 80 ns 1000 ns 5 V 16 A Tj = 25 °C dIF/dt = 200 A/µs IF = 80 A VFR = 1.1 x VFmax Tj = 125 °C IF = 60 A, dIF/dt = 200 A/µs, Vcc = 200 V Conduction losses versus average current (per diode) Figure 2. Typ 0.3 - Forward voltage drop versus forward current (maximum values, per diode) IFM(A) P1(W) δ = 0.05 δ = 0.2 δ = 0.1 δ = 0.5 200 δ=1 Tj=125°C (Typical values) 100 Tj=25°C Tj=125°C 10 T δ=tp/T IF(av) (A) 0 10 Figure 3. 20 30 40 50 60 70 VFM(V) tp 80 90 1 0.0 100 0.2 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Peak reverse recovery current versus dIF/dt (90% confidence, per diode) IRM(A) Zth(j-c)/Rth(j-c) 1.0 30 0.8 25 0.6 Min. VR=200V Tj=125°C IF=IF(av) 20 δ = 0.5 IF=2xIF(av) IF=0.5xIF(av) 15 0.4 δ = 0.2 10 δ = 0.1 T 0.2 5 Single pulse 0.0 1E-3 tp(s) 1E-2 1E-1 δ=tp/T 1E+0 dIF/dt(A/µs) tp 5E+0 0 0 50 100 150 200 250 300 350 400 450 500 3/7 Characteristics Figure 5. STTH16003 Reverse recovery time versus dIF/dt (90% confidence, per diode) trr(ns) 240 220 200 180 160 140 120 100 80 60 40 20 0 Softness factor (tb/ta) versus dIF/dt (typical values, per diode) Figure 6. S factor 0.6 VR=200V Tj=125°C VR=200V Tj=125°C 0.5 IF=2xIF(av) 0.4 IF=IF(av) 0.3 IF=0.5xIF(av) 0.2 0.1 dIF/dt(A/µs) 0 50 Figure 7. 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 Figure 9. 100 150 200 250 300 350 400 450 500 0.0 dIF/dt(A/µs) 0 50 Relative variation of dynamic Figure 8. parameters versus junction temperature (reference: Tj = 125°C) 100 150 200 250 300 350 400 450 500 Transient peak forward voltage versus dIF/dt (90% confidence, per diode) VFP(V) 8 IF=IF(av) Tj=125°C 7 S factor 6 5 4 3 IRM 2 1 Tj(°C) 50 75 100 125 0 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 Forward recovery time versus dIF/dt (90% confidence, per diode) tfr(ns) 1000 900 800 700 600 500 400 300 200 100 0 4/7 VFR=1.1 x VF max. IF=IF(av) Tj=125°C dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 STTH16003 2 Package information Package information ● Cooling method: by conduction (C) ● Recommended torque value: 0.9 to 1.2 N·m ● Epoxy meets UL 94,V0 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Table 6. ISOTOP dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E G2 A C A1 C2 E2 F1 F P1 D G S D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 B ØP G1 E1 5/7 Ordering information 3 STTH16003 Ordering information Table 7. Ordering information Order code Marking STTH16003TV1 STTH16003TV1 4 Weight Base qty Delivery mode ISOTOP 27 g (without screws) 10 (with screws) Tube Revision history Table 8. 6/7 Package Document revision history Date Revision Oct-1999 4D 25-Jun-2008 5 Description of changes Last issue. Reformatted to current standards. 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