STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5 N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH 5™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features Order codes TAB VDSS RDS(on)max ID PW STB20N95K5 250 W STF20N95K5 40 W STP20N95K5 950 V < 0.330 Ω 17.5 A 250 W STW20N95K5 ■ TO-220 worldwide best RDS(on) ■ Worldwide best FOM (figure of merit) ■ Ultra low gate charge ■ 100% avalanche tested ■ Zener-protected 3 D²PAK 1 2 TO-220FP TAB 3 1 2 2 Figure 1. 3 1 TO-220 Applications ■ 3 1 TO-247 Internal schematic diagram D(2,TAB) Switching applications Description These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. Table 1. G(1) S(3) AM01476v1 Device summary Order codes Marking Package Packaging D²PAK Tape and reel STB20N95K5 STF20N95K5 TO-220FP 20N95K5 STP20N95K5 TO-220 STW20N95K5 TO-247 June 2012 This is information on a product in full production. Doc ID 16825 Rev 4 Tube 1/20 www.st.com 20 Contents STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 .............................................. 9 Doc ID 16825 Rev 4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol D²PAK Parameter Unit TO-220 STF20N95K5 TO-247 VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 17.5 A ID Drain current (continuous) at TC = 100 °C 11 A Drain current (pulsed) 70 A IDM (1) PTOT Total dissipation at TC = 25 °C 250 IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) ESD Gate-source human body model (R= 1,5 kΩ, C = 100 pF) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) dv/dt (2) Tj Tstg 40 W 6 A 200 mJ 2 kV 2500 Peak diode recovery voltage slope Operating junction temperature Storage temperature V 6 V/ns -55 to 150 °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 17.5 A, di/dt ≤ 100 A/µs, VPeak ≤V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit D²PAK TO-220 TO-247 TO-220FP Rthj-case Thermal resistance junction-case max 0.5 Rthj-amb Thermal resistance junction-amb max 62.5 Rthj-pcb Thermal resistance junction-pcb max Doc ID 16825 Rev 4 30 50 3.1 °C/W 62.5 °C/W °C/W 3/20 Electrical characteristics 2 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 950 V, VDS = 950 V, Tc=125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID= 9 A V(BR)DSS Table 5. Symbol 950 3 V 4 0.275 0.330 Ω Dynamic Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions Min. Typ. Max. 1500 VDS =100 V, f=1 MHz, VGS=0 - 80 pF - 5 Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance f = 1MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 760 V, ID = 9 A VGS =10 V (see Figure 19) Unit pF pF - 170 - pF - 65 - pF - 3.5 - Ω - 40 8 25 - nC nC nC VGS = 0, VDS = 0 to 760 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/20 Doc ID 16825 Rev 4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 475 V, ID = 9 A, RG=4.7 Ω, VGS=10 V (see Figure 21) Electrical characteristics Min. Typ. Max. Unit - 17 12 70 20 - ns ns ns ns Min. Typ. Max. Unit - 17.5 70 mA A 1.5 V Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Forward on voltage ISD= 17.5 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 17.5 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 20) - 530 12 44 ns μC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 17.5 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C(see Figure 20) - 650 14 44 ns μC A Min. Typ. Max. Unit 30 - - V Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 8. Symbol Gate-source Zener diode Parameter Test conditions V(BR)GSO Gate-source breakdown voltage Igs ± 1mA, (ID= 0) The built-in-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 16825 Rev 4 5/20 Electrical characteristics STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK and TO-220 Figure 3. Thermal impedance for D²PAK and TO-220 Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 AM11182v1 ID (A) DS (o n) Op Lim era ite tion d by in th m is ax ar R e 10 a is Tj=150°C Tc=25°C Single pulse 10µs 100µs 1ms 10ms 1 0.1 0.1 Figure 4. 10 1 100 Safe operating area for TO-220FP AM11183v1 ID (A) 10 1 VDS(V) Tj=150°C Tc=25°C Single pulse is ea ) ar S(on D R t in ax n io y m t b ra pe ed O imit L s hi 10µs 100µs 1ms 10ms 0.1 0.01 0.1 Figure 6. 10 1 100 Safe operating area for TO-247 AM11184v1 ID (A) Tj=150°C Tc=25°C Single pulse 100 ) on 100µs 1ms 10ms Li O S( pe ra ite tion d by in t m his ax a RD rea is 10µs m 10 VDS(V) 1 0.1 0.1 6/20 1 10 100 VDS(V) Doc ID 16825 Rev 4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 8. Output characteristics Figure 9. AM11185v1 ID (A) Electrical characteristics Transfer characteristics AM11186v1 ID (A) VDS=15V VGS=10V 40 30 35 8V 25 30 20 25 7V 20 15 15 10 6V 10 5 5 5V 0 0 5 10 20 15 25 0 0 VDS(V) 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance AM11187v1 VGS (V) VDS(V) VDD=760V ID=9A 12 Qg 800 10 AM11188v1 RDS(on) (Ω) VGS=10V 0.29 VDS 600 8 0.28 6 400 4 200 0.27 2 0 0 10 30 20 40 0 Qg(nC) Figure 12. Capacitance variations 0.26 0 6 2 10 14 18 ID(A) Figure 13. Output capacitance stored energy AM11189v1 C (pF) AM11190v1 Eoss (µJ) 4.5 10000 4.0 3.5 Ciss 1000 3.0 2.5 2.0 100 Coss 10 Crss 1.5 1.0 0.5 1 0.1 1 10 100 VDS(V) Doc ID 16825 Rev 4 0 0 100 200 300 400 500 VDS(V) 7/20 Electrical characteristics STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 14. Normalized gate threshold voltage vs temperature AM11192v1 VGS(th) Figure 15. Normalized on-resistance vs temperature AM11193v1 RDS(on) (norm) (norm) 1.2 2.5 1.1 1.0 2.0 0.9 1.5 0.8 0.7 1.0 0.6 0.5 0.5 0.4 0.3 -25 25 75 125 Figure 16. Maximum avalanche energy vs starting Tj AM11194v1 EAS (mJ) 25 75 125 TJ(°C) Figure 17. Normalized BVDSS vs temperature AM11191v1 BVDSS (norm) ID=6 A VDD=50 V 200 1.10 1.08 180 1.06 160 1.04 140 8/20 0 -25 TJ(°C) 1.02 120 100 80 1.00 60 0.96 40 0.94 20 0 0 0.92 0.90 -25 0.98 20 40 60 80 100 120 140 TJ(°C) Doc ID 16825 Rev 4 25 75 125 TJ(°C) STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 16825 Rev 4 10% AM01473v1 9/20 Package mechanical data 4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/20 Max. 0.4 0° 8° Doc ID 16825 Rev 4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Package mechanical data Figure 24. D²PAK (TO-263) drawing 0079457_S Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters Doc ID 16825 Rev 4 11/20 Package mechanical data Table 10. STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 26. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K 12/20 Doc ID 16825 Rev 4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Table 11. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 16825 Rev 4 13/20 Package mechanical data STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S 14/20 Doc ID 16825 Rev 4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Table 12. Package mechanical data TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID 16825 Rev 4 5.70 15/20 Package mechanical data STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 28. TO-247 drawing 0075325_G 16/20 Doc ID 16825 Rev 4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 5 Packaging mechanical data Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 16825 Rev 4 Min. Max. 330 13.2 26.4 30.4 17/20 Packaging mechanical data STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 18/20 Doc ID 16825 Rev 4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 6 Revision history Revision history Table 14. Document revision history Date Revision Changes 25-Nov-2009 1 First release. 12-Jan-2010 2 Corrected VGS value in Table 2: Absolute maximum ratings. 22-Dec-2011 3 Inserted device in D2PAK. Document status promoted from preliminary data to datasheet. Added: Section 2.1: Electrical characteristics (curves) Updated Section 4: Package mechanical data. Added Section 5: Packaging mechanical data. Minor text changes. 06-Jun-2012 4 Figure 9: Transfer characteristics has been updated. Doc ID 16825 Rev 4 19/20 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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