STW88N65M5 STWA88N65M5 N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ V Power MOSFET in TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDSS @Tjmax. RDS(on) max. ID 710 V < 0.029 Ω 84 A STW88N65M5 STWA88N65M5 2 3 • Worldwide best RDS(on) in TO-247 1 • Higher VDSS rating TO-247 TO-247 long leads • Higher dv/dt capability • Excellent switching performance • Easy to drive Figure 1. Internal schematic diagram • 100% avalanche tested Applications ' • High efficiency switching applications: – Servers – PV inverters – Telecom infrastructure – Multi kW battery chargers * Description 6 $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages STW88N65M5 TO-247 88N65M5 STWA88N65M5 April 2013 This is information on a product in full production. Packaging Tube TO-247 long leads DocID022522 Rev 4 1/15 www.st.com 15 Contents STW88N65M5, STWA88N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 9 DocID022522 Rev 4 STW88N65M5, STWA88N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 84 A ID Drain current (continuous) at TC = 100 °C 50.5 A IDM (1) Drain current (pulsed) 336 A PTOT Total dissipation at TC = 25 °C 450 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 15 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 2000 mJ 15 V/ns - 55 to 150 °C 150 °C Value Unit 0.28 °C/W 50 °C/W 300 °C VGS Parameter dv/dt (2) Peak diode recovery voltage slope Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 84 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose DocID022522 Rev 4 3/15 Electrical characteristics 2 STW88N65M5, STWA88N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Unit 650 V 1 100 µA µA ± 100 nA 4 5 V 0.024 0.029 Ω Min. Typ. Max. Unit VGS = ± 25 V VGS(th) Max. 3 VGS = 10 V, ID = 42 A Table 5. Dynamic Symbol Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 8825 223 11 - pF pF pF Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 778 - pF Co(er)(2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 202 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.79 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 42 A, VGS = 10 V (see Figure 16) - 204 51 84 - nC nC nC Ciss Coss Crss 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/15 DocID022522 Rev 4 STW88N65M5, STWA88N65M5 Electrical characteristics Table 6. Switching times Symbol td(V) tr(V) tf(i) tc(off) Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 56 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) (see Figure 20) Min. Typ. - 141 16 29 56 Min. Typ. Max. Unit - ns ns ns ns Table 7. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Test conditions Max. Unit - 84 336 A A ISD = 84 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 84 A, di/dt = 100 A/µs VDD = 100 V (see Figure 17) - 544 14 50 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 84 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 17) - 660 20 60 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID022522 Rev 4 5/15 Electrical characteristics 2.1 STW88N65M5, STWA88N65M5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM10392v1 ID (A) 10 D S( on ) 100 O Li per m at ite io d ni by n m this ax a R rea is Tj=150°C Tc=25°C Single pulse 10µs 100µs 1ms 10ms 1 0.1 0.1 10 1 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM10393v1 ID (A) VDS=30V 225 VGS=10V 250 AM10394v1 ID (A) 200 8V 175 200 150 125 150 7V 100 100 75 50 50 6V 0 0 5 10 20 15 25 VDS(V) Figure 6. Gate charge vs gate-source voltage AM10395v1 VGS (V) VDS (V) VDD=520V ID=42A 14 VDS 25 0 3 4 5 6 7 8 9 VGS(V) Figure 7. Static drain-source on resistance AM10396v1 RDS(on) (Ω) VGS=10V 500 0.026 12 400 10 8 300 6 0.024 200 0.022 4 100 2 0 0 6/15 50 100 150 200 0 Qg(nC) 0.020 0 DocID022522 Rev 4 10 20 30 40 50 60 70 80 ID(A) STW88N65M5, STWA88N65M5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM10397v1 C (pF) AM10398v1 Eoss (µJ) 40 100000 35 10000 Ciss 30 25 1000 20 Coss 100 15 10 Crss 10 5 1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM04972v1 VGS(th) (norm) 0 0 VDS(V) 100 200 300 400 500 600 VDS(V) Figure 11. Normalized on resistance vs temperature AM05501v2 RDS(on) (norm) ID=250µA 2.1 1.10 ID= 42 A 1.9 VGS= 10 V 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM04974v1 VSD (V) 0.5 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 13. Normalized VDS vs temperature AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 0.6 TJ=150°C 1.00 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 DocID022522 Rev 4 0 25 50 75 100 TJ(°C) 7/15 Electrical characteristics STW88N65M5, STWA88N65M5 Figure 14. Switching losses vs gate resistance (1) AM11171v1 E (μJ) Eon VDD=400V VGS=10V TJ=25°C 3000 ID=56A Eoff 2000 1000 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/15 DocID022522 Rev 4 STW88N65M5, STWA88N65M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform V(BR)DSS Figure 20. Switching time waveform &RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII ,G VD 9GV ,G 7GHOD\RII RII IDM 9JV 9JV RQ ID 9JV,W VDD VDD ,G 9GV 9GV 7ULVH AM01472v1 DocID022522 Rev 4 7IDOO 7FU RVV RYHU $0Y 9/15 Package mechanical data 4 STW88N65M5, STWA88N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 10/15 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID022522 Rev 4 5.70 STW88N65M5, STWA88N65M5 Package mechanical data Figure 21. TO-247 drawing 0075325_G DocID022522 Rev 4 11/15 Package mechanical data STW88N65M5, STWA88N65M5 Table 9. TO-247 long leads mechanical data mm Dim. Min. Typ. A 4.90 5.15 D 1.85 2.10 E 0.55 0.67 F 1.07 1.32 F1 1.90 2.38 F2 2.87 3.38 G 10.90 BSC H 15.77 16.02 L 20.82 21.07 L1 4.16 4.47 L2 5.49 5.74 L3 20.05 20.30 L4 3.68 3.93 L5 6.04 6.29 M 2.25 2.55 V 10° V1 3° V3 20° Dia. 12/15 Max. 3.55 3.66 DocID022522 Rev 4 STW88N65M5, STWA88N65M5 Package mechanical data Figure 22. TO-247 long leads drawing 7395426_G DocID022522 Rev 4 13/15 Revision history 5 STW88N65M5, STWA88N65M5 Revision history Table 10. Document revision history 14/15 Date Revision Changes 23-Nov-2011 1 First release. 09-Dec-2011 2 Document status promoted from preliminary data to datasheet. 12-Jun-2012 3 Updated title on the coverpage. 30-Nov-2012 4 Added new part number: STWA88N65M5 Updated: Section 4: Package mechanical data DocID022522 Rev 4 STW88N65M5, STWA88N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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