STMICROELECTRONICS STN3N40K3

STN3N40K3
N-channel 400 V, 3 Ω, 1.8 A SOT-223
SuperMESH3™ Power MOSFET
Features
Order code
VDSS
RDS(on) max
ID
PW
STN3N40K3
400 V
< 3.4 Ω
1.8 A
3.3 W
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitance
■
Improved diode reverse rcovery characteristics
■
Zener-protected
2
1
2
3
SOT-223
Application
■
Switching applications
Figure 1.
Internal schematic diagram
D(2)
Description
The device is made using the SuperMESH3TM
Power MOSFET technology that is obtained via
improvements applied to STMicroelectronics’
SuperMESH3TM technology combined with a new
optimized vertical structure. The resulting product
has an extremely low on resistance, superior
dynamic performance and high avalanche
capability, making it especially suitable for the
most demanding applications.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order code
Marking
Package
Packaging
STN3N40K3
3N40K3
SOT-223
Tape and reel
April 2011
Doc ID 17697 Rev 2
1/13
www.st.com
13
Contents
STN3N40K3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics
................................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
.............................................. 9
Doc ID 17697 Rev 2
STN3N40K3
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain source voltage
400
V
VGS
Gate-source voltage
± 30
V
ID
Drain current continuous TC = 25 °C
ID
Drain current continuous TC = 100 °C
1 (1)
A
IDM
(2)
Drain current pulsed
7.2
A
IAR
(3)
Avalanche current, repetetive or not repetetive
0.6
A
EAS
(4)
Single pulse avalanche energy
45
mJ
Total dissipation at TC = 25 °C
3.3
W
Peak diode recovery voltage slope
12
V/ns
1000
V
-55 to 150
°C
Value
Unit
PTOT
dv/dt
(5)
Vesd-(g-s) G-S ESD (HBM C 0 100 pF; R = 1.5 kΩ)
Tj
Tstg
Operating junction temperature
Storage temperature
1.8
(1)
A
1. Drain current limited by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. Pulse width limited by TJmax.
4. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
5. Isd ≤1.8 A, di/dt ≤400 A/µs, VDD ≤80% V(BR)DSS.
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max.
37.88
°C/W
Rthj-a
Thermal resistance junction-amb max.
60
°C/W
Maximum lead temperature for soldering
purpose
260
°C
Tl
Doc ID 17697 Rev 2
3/13
Electrical characteristics
2
STN3N40K3
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
400
V
IDSS
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
±10
µA
3.75
4.5
V
3
3.4
Ω
Min.
Typ.
Max.
Unit
-
165
17
3
-
pF
pF
pF
-
9
-
pF
-
14
-
pF
VGS = ± 20 V, VDS=0
VGS(th)
Gate threshold voltage VGS = VDS, ID = 50 µA
RDS(on)
Static drain-source on
resistance
Table 5.
Symbol
Ciss
Coss
Crss
Coss(tr)(2)
3
VGS = 10 V, ID = 0.6 A
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
VDS = 50 V, f = 1 MHz,
VGS = 0
Equivalent output
Coss(er)(1) capacitance energy
related
Equivalent output
capacitance time
related
VDS=0 to 320 V, VGS=0
Rg
Instrinsic gate
resistance
f=1 MHz open drain
-
10
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 320 V, ID = 1.8 A,
VGS = 10 V
(see Figure 16)
-
11
2
7
-
nC
nC
nC
1. Is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
2. Is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS
increases from 0 to 80% VDSS
4/13
Unit
Doc ID 17697 Rev 2
STN3N40K3
Electrical characteristics
Table 6.
Symbol
td(on)
tr
td(off)
tf
Table 7.
Symbol
Switching times
Parameter
Turn on delay time
Rise time
Turn off delay time
Fall time
Parameter
ISDM (1)
VSD (2)
Forward on voltage
trr
Qrr
IRRM
trr
Qrr
IRRM
VDD = 200 V, ID = 0.6,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Min.
Typ.
Max
Unit
-
7
8
18
14
-
ns
ns
ns
ns
Min.
Typ.
Max.
Unit
-
1.8
7.2
A
A
-
1.5
V
Source drain diode
Source-drain current
Source-drain current
(pulsed)
ISD
Test conditions
Test conditions
ISD = 0.6 A, VGS = 0
Reverse recovery time
ISD = 1.8 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 60 V
Reverse recovery current (see Figure 17)
-
145
490
7
ns
nC
A
Reverse recovery time
ISD = 1.8 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 60 V, Tj = 150 °C
Reverse recovery current (see Figure 17)
-
166
580
7
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17697 Rev 2
5/13
Electrical characteristics
STN3N40K3
2.1
Electrical characteristics
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM08994v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
1
is
ea )
ar S(on
D
R
t
in ax
n
io y m
t
b
ra
pe ed
O imit
L
s
hi
0.1
10µs
100µs
1ms
10ms
0.01
0.001
0.1
Figure 4.
10
1
100
VDS(V)
Output characteristics
AM09050v1
ID (A)
VGS=10V
3.5
AM08995v1
ID
(A)
VDS=15V
3.0
7V
3.0
2.5
2.5
2.0
2.0
1.5
6V
1.5
1.0
1.0
0.5
0.5
5V
0
0
Figure 6.
5
10
15
20
25
Gate charge vs gate-source voltage Figure 7.
AM08996v1
VGS
(V)
VGS
VDD=320V
ID=1.8A
12
VDS
350
300
10
RDS(on)
(Ω)
4.2
2
4
6
8
VGS(V)
Static drain-source on resistance
AM08997v1
VGS=10V
4.0
3.8
250
8
3.6
200
6
4
2
0
0
6/13
0
0
VDS(V)
2
4
6
8
3.4
150
3.2
100
3.0
50
2.8
0
10 Qg(nC)
2.6
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID(A)
Doc ID 17697 Rev 2
STN3N40K3
Figure 8.
Electrical characteristics
Capacitance variations
Figure 9.
AM08998v1
C
(pF)
Output capacitance stored energy
AM08999v1
Eoss
(µJ)
0.8
Ciss
100
0.7
0.6
0.5
0.4
10
Coss
0.3
0.2
Crss
1
0.1
1
100
10
AM09000v1
VGS(th)
100
200
300
400
VDS(V)
Figure 11. Normalized on resistance vs.
temperature
AM09001v1
RDS(on)
(norm)
ID=50µA
1.10
0
0
VDS(V)
Figure 10. Normalized gate threshold voltage
vs. temperature
(norm)
0.1
VGS=10V
ID=0.6A
2.5
1.00
2.0
1.5
0.90
1.0
0.80
0.5
0.70
-75
-25
25
75
125
Figure 12. Source-drain diode forward
characteristics
-25
25
75
125
TJ(°C)
Figure 13. Normalized BVDSS vs. temperature
AM09003v1
VSD
(V)
0
-75
TJ(°C)
AM09002v1
BVDSS
(norm)
TJ=-50°C
ID=1mA
1.0
1.10
0.9
1.05
0.8
TJ=25°C
0.7
1.00
TJ=150°C
0.6
0.95
0.5
0.4
0
0.4
0.8
1.2
1.6
ISD(A)
0.90
-75
Doc ID 17697 Rev 2
-25
25
75
125
TJ(°C)
7/13
Electrical characteristics
STN3N40K3
Figure 14. Maximum avalanche energy vs.
starting Tj
AM09004v1
EAS (mJ)
50
ID=0.6 A
VDD=50 V
45
40
35
30
25
20
15
10
5
0
0
8/13
20
40
60
80 100 120 140 TJ(°C)
Doc ID 17697 Rev 2
STN3N40K3
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 19. Unclamped inductive waveform
AM01471v1
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 17697 Rev 2
10%
AM01473v1
9/13
Package mechanical data
4
STN3N40K3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/13
Doc ID 17697 Rev 2
STN3N40K3
Package mechanical data
Table 8.
SOT-223 mechanical data
mm
Dim.
Min.
Typ.
Max.
a
2.27
2.3
2.33
b
4.57
4.6
4.63
c
0.2
0.4
0.6
d
0.63
0.65
0.67
e1
1.5
1.6
1.7
e4
0.32
f
2.9
3
3.1
g
0.67
0.7
0.73
l1
6.7
7
7.3
l2
3.5
3.5
3.7
L
6.3
6.5
6.7
Figure 21. SOT-223 mechanical data drawing
L
e1
l2
d
a
c
b
e4
f
l1
C
B
C
E
g
P008B
Doc ID 17697 Rev 2
11/13
Revision history
5
STN3N40K3
Revision history
Table 9.
12/13
Document revision history
Date
Revision
Changes
29-Jun-2010
1
First release.
08-Apr-2011
2
Document status promoted from preliminary data to datasheet.
Doc ID 17697 Rev 2
STN3N40K3
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Doc ID 17697 Rev 2
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