STN3N40K3 N-channel 400 V, 3 Ω, 1.8 A SOT-223 SuperMESH3™ Power MOSFET Features Order code VDSS RDS(on) max ID PW STN3N40K3 400 V < 3.4 Ω 1.8 A 3.3 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse rcovery characteristics ■ Zener-protected 2 1 2 3 SOT-223 Application ■ Switching applications Figure 1. Internal schematic diagram D(2) Description The device is made using the SuperMESH3TM Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH3TM technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. G(1) S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging STN3N40K3 3N40K3 SOT-223 Tape and reel April 2011 Doc ID 17697 Rev 2 1/13 www.st.com 13 Contents STN3N40K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics ................................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 9 Doc ID 17697 Rev 2 STN3N40K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain source voltage 400 V VGS Gate-source voltage ± 30 V ID Drain current continuous TC = 25 °C ID Drain current continuous TC = 100 °C 1 (1) A IDM (2) Drain current pulsed 7.2 A IAR (3) Avalanche current, repetetive or not repetetive 0.6 A EAS (4) Single pulse avalanche energy 45 mJ Total dissipation at TC = 25 °C 3.3 W Peak diode recovery voltage slope 12 V/ns 1000 V -55 to 150 °C Value Unit PTOT dv/dt (5) Vesd-(g-s) G-S ESD (HBM C 0 100 pF; R = 1.5 kΩ) Tj Tstg Operating junction temperature Storage temperature 1.8 (1) A 1. Drain current limited by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. Pulse width limited by TJmax. 4. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. 5. Isd ≤1.8 A, di/dt ≤400 A/µs, VDD ≤80% V(BR)DSS. Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max. 37.88 °C/W Rthj-a Thermal resistance junction-amb max. 60 °C/W Maximum lead temperature for soldering purpose 260 °C Tl Doc ID 17697 Rev 2 3/13 Electrical characteristics 2 STN3N40K3 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. 400 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 3.75 4.5 V 3 3.4 Ω Min. Typ. Max. Unit - 165 17 3 - pF pF pF - 9 - pF - 14 - pF VGS = ± 20 V, VDS=0 VGS(th) Gate threshold voltage VGS = VDS, ID = 50 µA RDS(on) Static drain-source on resistance Table 5. Symbol Ciss Coss Crss Coss(tr)(2) 3 VGS = 10 V, ID = 0.6 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 Equivalent output Coss(er)(1) capacitance energy related Equivalent output capacitance time related VDS=0 to 320 V, VGS=0 Rg Instrinsic gate resistance f=1 MHz open drain - 10 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 320 V, ID = 1.8 A, VGS = 10 V (see Figure 16) - 11 2 7 - nC nC nC 1. Is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS increases from 0 to 80% VDSS 4/13 Unit Doc ID 17697 Rev 2 STN3N40K3 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol Switching times Parameter Turn on delay time Rise time Turn off delay time Fall time Parameter ISDM (1) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM VDD = 200 V, ID = 0.6, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Min. Typ. Max Unit - 7 8 18 14 - ns ns ns ns Min. Typ. Max. Unit - 1.8 7.2 A A - 1.5 V Source drain diode Source-drain current Source-drain current (pulsed) ISD Test conditions Test conditions ISD = 0.6 A, VGS = 0 Reverse recovery time ISD = 1.8 A, di/dt = 100 A/µs Reverse recovery charge VDD = 60 V Reverse recovery current (see Figure 17) - 145 490 7 ns nC A Reverse recovery time ISD = 1.8 A, di/dt = 100 A/µs Reverse recovery charge VDD = 60 V, Tj = 150 °C Reverse recovery current (see Figure 17) - 166 580 7 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 17697 Rev 2 5/13 Electrical characteristics STN3N40K3 2.1 Electrical characteristics Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM08994v1 ID (A) Tj=150°C Tc=25°C Single pulse 1 is ea ) ar S(on D R t in ax n io y m t b ra pe ed O imit L s hi 0.1 10µs 100µs 1ms 10ms 0.01 0.001 0.1 Figure 4. 10 1 100 VDS(V) Output characteristics AM09050v1 ID (A) VGS=10V 3.5 AM08995v1 ID (A) VDS=15V 3.0 7V 3.0 2.5 2.5 2.0 2.0 1.5 6V 1.5 1.0 1.0 0.5 0.5 5V 0 0 Figure 6. 5 10 15 20 25 Gate charge vs gate-source voltage Figure 7. AM08996v1 VGS (V) VGS VDD=320V ID=1.8A 12 VDS 350 300 10 RDS(on) (Ω) 4.2 2 4 6 8 VGS(V) Static drain-source on resistance AM08997v1 VGS=10V 4.0 3.8 250 8 3.6 200 6 4 2 0 0 6/13 0 0 VDS(V) 2 4 6 8 3.4 150 3.2 100 3.0 50 2.8 0 10 Qg(nC) 2.6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID(A) Doc ID 17697 Rev 2 STN3N40K3 Figure 8. Electrical characteristics Capacitance variations Figure 9. AM08998v1 C (pF) Output capacitance stored energy AM08999v1 Eoss (µJ) 0.8 Ciss 100 0.7 0.6 0.5 0.4 10 Coss 0.3 0.2 Crss 1 0.1 1 100 10 AM09000v1 VGS(th) 100 200 300 400 VDS(V) Figure 11. Normalized on resistance vs. temperature AM09001v1 RDS(on) (norm) ID=50µA 1.10 0 0 VDS(V) Figure 10. Normalized gate threshold voltage vs. temperature (norm) 0.1 VGS=10V ID=0.6A 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 -25 25 75 125 Figure 12. Source-drain diode forward characteristics -25 25 75 125 TJ(°C) Figure 13. Normalized BVDSS vs. temperature AM09003v1 VSD (V) 0 -75 TJ(°C) AM09002v1 BVDSS (norm) TJ=-50°C ID=1mA 1.0 1.10 0.9 1.05 0.8 TJ=25°C 0.7 1.00 TJ=150°C 0.6 0.95 0.5 0.4 0 0.4 0.8 1.2 1.6 ISD(A) 0.90 -75 Doc ID 17697 Rev 2 -25 25 75 125 TJ(°C) 7/13 Electrical characteristics STN3N40K3 Figure 14. Maximum avalanche energy vs. starting Tj AM09004v1 EAS (mJ) 50 ID=0.6 A VDD=50 V 45 40 35 30 25 20 15 10 5 0 0 8/13 20 40 60 80 100 120 140 TJ(°C) Doc ID 17697 Rev 2 STN3N40K3 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform AM01471v1 Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 17697 Rev 2 10% AM01473v1 9/13 Package mechanical data 4 STN3N40K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/13 Doc ID 17697 Rev 2 STN3N40K3 Package mechanical data Table 8. SOT-223 mechanical data mm Dim. Min. Typ. Max. a 2.27 2.3 2.33 b 4.57 4.6 4.63 c 0.2 0.4 0.6 d 0.63 0.65 0.67 e1 1.5 1.6 1.7 e4 0.32 f 2.9 3 3.1 g 0.67 0.7 0.73 l1 6.7 7 7.3 l2 3.5 3.5 3.7 L 6.3 6.5 6.7 Figure 21. SOT-223 mechanical data drawing L e1 l2 d a c b e4 f l1 C B C E g P008B Doc ID 17697 Rev 2 11/13 Revision history 5 STN3N40K3 Revision history Table 9. 12/13 Document revision history Date Revision Changes 29-Jun-2010 1 First release. 08-Apr-2011 2 Document status promoted from preliminary data to datasheet. Doc ID 17697 Rev 2 STN3N40K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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