TMBAT49 Small signal Schottky diode Features ■ very low turn-on voltage ■ fast switching Description The TMBAT49 is a general purpose metal to silicon diode. This device has integrated protection against excessive voltage such as electrostatic discharges. November 2010 Doc ID 3484 Rev 2 MELF (glass) 1/6 www.st.com 6 Characteristics 1 TMBAT49 Characteristics Table 1. Absolute ratings (limiting values) Symbol VRRM IF Parameter Repetitive peak reverse voltage Value Unit 80 V 500 mA Forward continuous current Tj = 70 °C IFRM Repetitive peak forward current tp = 1 s δ ≤ 0.5 3 A IFSM Surge non repetitive forward current tp = 10 ms 10 A Tstg Storage temperature range - 65 to +150 °C Tj Operating junction temperature range - 65 to +125 °C TL Maximum lead soldering temperature during 15 s 260 °C Value Unit Table 2. Thermal parameter Symbol Rth(j-l) Table 3. Symbol IR(1) VF(1) Parameter Junction to lead 110 °C/W Static electrical characteristics Parameter Test conditions Reverse leakage current Tj = 25 °C Forward voltage drop Tj = 25 °C Min. Typ. Max. Unit VR = 80 V - - 200 µA IF = 10 mA - - 0.32 IF = 100 mA - - 0.42 IF = 1 A - - 1 Min. Typ. Max. VR = 0 V - 120 - VR = 5 V - 35 - V 1. Pulse test: tp ≤ 300 µs, δ < 2% Table 4. Symbol C 2/6 Dynamic characteristics (Tj = 25 °C) Parameter Test conditions Diode capacitance F = 1 MHz Doc ID 3484 Rev 2 Unit pF TMBAT49 Characteristics Figure 1. 1.E+03 Forward voltage drop versus Figure 2. forward current (typical values, low level) IFM(mA) 10 Forward voltage drop versus forward current (typical values, high level) IFM(A) 9 1.E+02 8 Tj = 25 °C 7 1.E+01 Tj = 100 °C 6 Tj = 55 °C 5 Tj = 25 °C 4 1.E+00 3 2 1.E-01 1 1.E-02 0.0 VFM(V) 0.1 Figure 3. 1.E+01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Reverse leakage current versus reverse voltage applied (typical values) 0 0.00 Figure 4. IR(mA) 100 VFM(V) 0.25 0.50 0.75 1.00 1.50 Junction capacitance versus reverse voltage applied (typical values) C(pF) F = 1 MHz Vosc = 30 mV Tj = 25 °C Tj = 125 °C 1.E+00 1.25 Tj = 100 °C Tj = 75 °C 1.E-01 Tj = 50 °C Tj = 25 °C 1.E-02 VR(V) 1.E-03 0 Figure 5. 25 10 20 30 40 50 60 70 1 80 Non-repetitive peak surge forward current versus pulse duration (square waveform) IFSM(A) VR(V) 10 Figure 6. 10 10 100 Non-repetitive peak surge forward current versus number of cycles IFSM(A) 20 tp=10 ms One cycle 15 10 5 0 0.1 tp(ms) 1.0 10.0 Number of cycles 1 1 Doc ID 3484 Rev 2 10 100 3/6 Package information 2 TMBAT49 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. MELF package dimensions Dimensions A Ref. Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 4.80 5.20 0.189 0.205 øB 2.50 2.65 0.098 0.104 C 0.45 0.60 0.018 0.024 ØB ØD C Figure 7. C øD 2.50 Footprint (dimensions in mm) 3 4 6.5 4/6 Doc ID 3484 Rev 2 0.098 TMBAT49 3 Ordering information Ordering information Table 6. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode TMBAT49FILM Cathode ring MELF (glass) 0.15 g 1500 Bulk Revision history Table 7. Document revision history Date Revision Aug-1999 1A 12-Nov-2010 2 Changes Previous release. Added ECOPACK statement. Updated graphics in Section 1. Doc ID 3484 Rev 2 5/6 TMBAT49 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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