STMICROELECTRONICS TMBAT49_10

TMBAT49
Small signal Schottky diode
Features
■
very low turn-on voltage
■
fast switching
Description
The TMBAT49 is a general purpose metal to
silicon diode. This device has integrated
protection against excessive voltage such as
electrostatic discharges.
November 2010
Doc ID 3484 Rev 2
MELF
(glass)
1/6
www.st.com
6
Characteristics
1
TMBAT49
Characteristics
Table 1.
Absolute ratings (limiting values)
Symbol
VRRM
IF
Parameter
Repetitive peak reverse voltage
Value
Unit
80
V
500
mA
Forward continuous current
Tj = 70 °C
IFRM
Repetitive peak forward current
tp = 1 s
δ ≤ 0.5
3
A
IFSM
Surge non repetitive forward current
tp = 10 ms
10
A
Tstg
Storage temperature range
- 65 to +150
°C
Tj
Operating junction temperature range
- 65 to +125
°C
TL
Maximum lead soldering temperature during 15 s
260
°C
Value
Unit
Table 2.
Thermal parameter
Symbol
Rth(j-l)
Table 3.
Symbol
IR(1)
VF(1)
Parameter
Junction to lead
110
°C/W
Static electrical characteristics
Parameter
Test conditions
Reverse leakage current Tj = 25 °C
Forward voltage drop
Tj = 25 °C
Min.
Typ.
Max.
Unit
VR = 80 V
-
-
200
µA
IF = 10 mA
-
-
0.32
IF = 100 mA
-
-
0.42
IF = 1 A
-
-
1
Min.
Typ.
Max.
VR = 0 V
-
120
-
VR = 5 V
-
35
-
V
1. Pulse test: tp ≤ 300 µs, δ < 2%
Table 4.
Symbol
C
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Dynamic characteristics (Tj = 25 °C)
Parameter
Test conditions
Diode capacitance F = 1 MHz
Doc ID 3484 Rev 2
Unit
pF
TMBAT49
Characteristics
Figure 1.
1.E+03
Forward voltage drop versus
Figure 2.
forward current (typical values, low
level)
IFM(mA)
10
Forward voltage drop versus
forward current (typical values,
high level)
IFM(A)
9
1.E+02
8
Tj = 25 °C
7
1.E+01
Tj = 100 °C
6
Tj = 55 °C
5
Tj = 25 °C
4
1.E+00
3
2
1.E-01
1
1.E-02
0.0
VFM(V)
0.1
Figure 3.
1.E+01
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Reverse leakage current versus
reverse voltage applied (typical
values)
0
0.00
Figure 4.
IR(mA)
100
VFM(V)
0.25
0.50
0.75
1.00
1.50
Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
F = 1 MHz
Vosc = 30 mV
Tj = 25 °C
Tj = 125 °C
1.E+00
1.25
Tj = 100 °C
Tj = 75 °C
1.E-01
Tj = 50 °C
Tj = 25 °C
1.E-02
VR(V)
1.E-03
0
Figure 5.
25
10
20
30
40
50
60
70
1
80
Non-repetitive peak surge forward
current versus pulse duration
(square waveform)
IFSM(A)
VR(V)
10
Figure 6.
10
10
100
Non-repetitive peak surge forward
current versus number of cycles
IFSM(A)
20
tp=10 ms
One cycle
15
10
5
0
0.1
tp(ms)
1.0
10.0
Number of cycles
1
1
Doc ID 3484 Rev 2
10
100
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Package information
2
TMBAT49
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 5.
MELF package dimensions
Dimensions
A
Ref.
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ.
Max.
A
4.80
5.20
0.189
0.205
øB
2.50
2.65
0.098
0.104
C
0.45
0.60
0.018
0.024
ØB
ØD
C
Figure 7.
C
øD
2.50
Footprint (dimensions in mm)
3
4
6.5
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Doc ID 3484 Rev 2
0.098
TMBAT49
3
Ordering information
Ordering information
Table 6.
4
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
TMBAT49FILM
Cathode ring
MELF (glass)
0.15 g
1500
Bulk
Revision history
Table 7.
Document revision history
Date
Revision
Aug-1999
1A
12-Nov-2010
2
Changes
Previous release.
Added ECOPACK statement. Updated graphics in Section 1.
Doc ID 3484 Rev 2
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TMBAT49
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