TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Source 1 6. Gate 1 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 Features ID (A) 20 @ VGS = 4.5V 6 28 @ VGS = 2.5V 5 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On resistance ● ESD Protected HBM 2KV Application ● Portable Applications ● Battery Management Ordering Information Part No. Package Packing TSM2611EDCX6 RFG SOT-26 3Kpcs / 7” Reel ` Dual N-Channel MOSFET Note: “G” denotes Halogen Free Product. Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V ID 6 A IDM 22 A IS 1 A Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation TA=25 C 0.83 PD o TA=100 C Operating Junction Temperature +150 o TJ, TSTG -55 to +150 o Symbol Limit TJ Operating Junction and Storage Temperature Range W 0.3 C C Thermal Performance Parameter Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance (PCB mounted) RӨJA Unit 80 o 150 o C/W C/W Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad, t ≤ 10 sec. 1/6 Version: A11 TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 0.5 0.7 1 V Gate Body Leakage VGS = ±10V, VDS = 0V IGSS -- -- ±10 µA VDS = 16V, VGS = 0V IDSS µA Zero Gate Voltage Drain Current Drain-Source On-State Resistance Diode Forward Voltage b Dynamic Total Gate Charge VGS = 2.5V, ID = 5A IS = 1A, VGS = 0V VDS = 10V, ID = 6A, Gate-Source Charge VGS = 4.5V Gate-Drain Charge Gate Resistance VGS=VDS=0V, f = 1.0MHz Input Capacitance VDS = 10V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Switching VGS = 4.5V, ID = 6A f = 1.0MHz -- -- 1.0 -- 16 20 -- 20 28 VSD -- 0.7 1.3 Qg -- 13.5 19 Qgs -- 0.85 -- Qgd -- 5.4 -- Rg -- 1 -- Ciss -- 680 -- Coss -- 144 -- Crss -- 137 -- RDS(ON) mΩ V nC Ω pF b.c Turn-On Delay Time td(on) -- 6 12 Turn-On Rise Time VDD = 10V, ID = 1A, VGEN tr -- 12 24 Turn-Off Delay Time = 10V, RG = 3.3Ω td(off) -- 65 120 tf -- 35 65 VSD -- 0.7 1.3 tr -- 24 -- -- 16 -- Turn-Off Fall Time nS b Diode Characteristic Diode Forward Voltage IS = 1A, VGS = 0V Reverse Recovery Time ISD = 6A, dISD /dt=100A/µS Reversion Recovery Charge td(off) Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/6 nS Version: A11 TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Drain Current vs. Junction Temperature On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A11 TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Capacitance Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: A11 TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Mechanical Drawing DIM A A1 B C D E F G H I J 5/6 SOT-26 DIMENSION MILLIMETERS INCHES MIN MIN TYP MAX TYP MAX 0.95 BSC 0.0374 BSC 2.60 1.9 BSC 2.80 3.00 1.40 2.80 1.50 2.90 1.70 3.10 1.00 0.00 1.10 -- 1.20 0.10 0.35 0.10 0.40 0.15 0.50 0.20 0.30 5º --- 0.60 10º 0.1024 0.0551 0.1101 0.0394 0.00 0.0138 0.0039 0.0118 5º 0.0748 BSC 0.1102 0.1181 0.0591 0.0669 0.1142 0.0433 0.1220 0.0472 0.0157 0.0039 0.0197 0.0059 --- 0.0079 0.0236 10º Version: A11 TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A11