TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =22mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =29mΩ Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Ordering Information Part No. TSM6968DCA Packing Tape & Reel Package TSSOP-8 3,000/per reel Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Voltage VGS ± 12 V Continuous Drain Current, VGS @4.5V. ID 6.5 A Pulsed Drain Current, VGS @4.5V IDM 30 A PD 1.5 W Maximum Power Dissipation o Ta = 25 C o Ta = 70 C Operating Junction Temperature Operating Junction and Storage Temperature Range 0.96 TJ +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Rθjf 35 o C/W 83 o C/W Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec. TSM6968D 1-5 Rθja 2003/12 rev. A Unit Electrical Characteristics o Rate ID = 6.5A, (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- Drain-Source On-State Resistance VGS = 4.5V, ID = 6.5A RDS(ON) -- 15 22 Drain-Source On-State Resistance VGS = 2.5V, ID = 5.5A RDS(ON) -- 20 30 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.5 0.85 -- V Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage VGS = ± 12V, VDS = 0V IGSS -- -- ± 10 uA On-State Drain Current VGS = 4.5V, VDS >= 5V ID(ON) 30 -- -- A Forward Transconductance VDS = 10V, ID = 6.5A gfs -- 30 -- S Total Gate Charge VDS = 10V, ID = 6.5A, Qg -- 15.5 30 Gate-Source Charge VGS = 4.5V Qgs -- 2 -- Qgd -- 3.5 -- Dynamic Gate-Drain Charge nC Turn-On Delay Time VDD = 10V, RL = 10Ω, td(on) -- 75 100 Turn-On Rise Time ID = 1A, VGEN = 4.5V, tr -- 125 150 Turn-Off Delay Time RG = 6Ω td(off) -- 600 720 tf -- 300 360 Input Capacitance VDS = 10V, VGS = 0V, Ciss -- 1336 -- Output Capacitance f = 1.0MHz Coss -- 220 -- Crss -- 130 -- IS -- -- 1.5 A VSD -- 0.6 1.2 V Turn-Off Fall Time Reverse Transfer Capacitance nS pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.5A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM6968D 2-5 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM6968D 3-5 2003/12 rev. A Electrical Characteristics Curve (continued) TSM6968D 4-5 2003/12 rev. A TSSOP-8 Mechanical Drawing TSSOP-8 DIMENSION DIM TSM6968D 5-5 MILLIMETERS INCHES A MIN 6.20 MAX 6.60 MIN 0.244 MAX 0.260 a 4.30 4.50 0.170 0.177 B C 2.90 3.10 0.65 (typ) 0.114 0.122 0.025 (typ) D 0.25 0.30 0.010 0.019 E e 1.05 0.05 1.20 0.15 0.041 0.002 0.049 0.009 F 0.127 L 0.50 0.005 0.70 0.020 2003/12 rev. A 0.028