TSM2301 -20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = -20V RDS (on), Vgs @ -4.5V, Ids @ -2.8A =130mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =190mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities High density cell design for ultra low on-resistance Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2301CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20V V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Maximum Power Dissipation o Ta = 25 C PD o Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range 1.25 W 0.8 TJ +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit TL 5 Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. TSM2301 Rθja 1-6 100 2003/12 rev. C Unit S o C/W Electrical Characteristics o Ta = 25 C, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit V Static Drain-Source Breakdown Voltage VGS = 0V, ID = - 250uA BVDSS -20 -- -- Drain-Source On-State Resistance VGS = -4.5V, ID = -2.8A RDS(ON) -- 95 130 Drain-Source On-State Resistance VGS = -2.5V, ID = -2.0A RDS(ON) -- 122 190 Gate Threshold Voltage VDS = VGS, ID = - 250uA VGS(TH) -0.45 -- -- V Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V IDSS -- -- -1.0 uA Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA On-State Drain Current VDS ≧-10V, VGS = -5V ID(ON) -6 -- -- A Forward Transconductance VDS = - 5V, ID = - 4A gfs -- 6.5 -- S Qg -- 5.4 10 Qgs -- 0.8 -- Qgd -- 1.1 -- td(on) -- 5 25 tr -- 19 60 td(off) -- 95 110 tf -- 65 80 Ciss -- 447 -- Coss -- 127 -- Crss -- 80 -- IS -- -- -2.4 A VSD -- - 0.8 -1.2 V mΩ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -6V, ID = -2.8A, VGS = -4.5V VDD = -6V, RL = 6Ω, ID = -1A, VGEN = -4.5V, RG = 6Ω VDS = -6V, V GS = 0V, f = 1.0MHz nC nS pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = - 1.6A, V GS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM2301 2-6 2003/12 rev. C Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM2301 3-6 2003/12 rev. C Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM2301 4-6 2003/12 rev. C Marking Indication P/N: TSM2301CX Package: SOT-23 * 01 = Product code for TSM2301 * YQL = Date Code Y = Year Code Q = Quarter Code (Q1=A, Q2=B, Q3=C, Q4=D) L = Lot Number TSM2301 5-6 2003/12 rev. C SOT-23 Mechanical Drawing A A B B F F SOT-23 DIMENSION DIM E E D CD TSM2301 INCHES MIN MAX MIN MAX A 2.88 2.91 0.113 0.115 B 0.39 0.42 0.015 0.017 C 1.78 2.03 0.070 0.080 D 0.51 0.61 0.020 0.024 E 1.59 1.66 0.063 0.065 F 1.04 1.08 0.041 0.043 0.07 0.09 0.003 0.004 GG G MILLIMETERS C 6-6 2003/12 rev. C