TSM3443 Preliminary -20V P-Channel Enhancement-Mode MOSFET SOT-26 Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = -20V RDS (on), Vgs @ -4.5V, Ids @ -4.7A =60mΩ RDS (on), Vgs @ -2.5V, Ids @ -3.7A =100mΩ Block Diagram Features P-Channel MOSFET Advanced trench process technology High density cell design for ultra low on-resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Ordering Information Part No. TSM3443CX6 Packing Package Tape & Reel SOT-26 3,000/per reel Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20V V Gate-Source Voltage VGS ±12 V Continuous Drain Current, ID -4.7 A Pulsed Drain Current, IDM -20 A o Maximum Power Dissipation Ta = 25 C o Ta = 70 C Operating Junction Temperature Operating Junction and Storage Temperature Range PD 2 W 1.3 TJ +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Rθjf 30 o C/W 50 o C/W Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec. TSM3443 Preliminary 1-3 Rθja 2006/02 rev. A Unit Electrical Characteristics o (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit V Static Drain-Source Breakdown Voltage VGS = 0V, ID = - 250uA BVDSS -20 -- -- Drain-Source On-State Resistance VGS = - 4.5V, ID = -4.7A RDS(ON) -- 48 60 Drain-Source On-State Resistance VGS = - 2.5V, ID = -1A RDS(ON) -- 80 100 Gate Threshold Voltage VDS = VGS, ID = - 250uA VGS(TH) -0.6 -- -1.4 V Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V IDSS -- -- -1.0 µA Gate Body Leakage VGS = ±12V, VDS = 0V IGSS -- -- ±100 nA On-State Drain Current VDS =-5V, VGS = -4.5V ID(ON) -15 -- -- A Forward Transconductance VDS = -10V, ID = - 4.7A gfs -- 11 -- S Qg -- 6 9 Qgs -- 1.4 -- Qgd -- 1.9 -- td(on) -- 22 35 tr -- 35 55 td(off) -- 45 70 mΩ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, ID = -4.7A, VGS = -4.5V VDD = -10V, RL = 10Ω, ID = -1A, VGEN = - 4.5V, RG = 6Ω VDS = -10V, VGS = 0V, f = 1.0MHz nC nS tf -- 25 40 Ciss -- 640 -- Coss -- 180 -- Crss -- 90 -- IS -- -- -1.3 A VSD -- -0.75 -1.2 V pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = -1.3A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM3443 Preliminary 2-3 2006/02 rev. A SOT-26 Mechanical Drawing SOT-26 DIMENSION DIM 3-3 INCHES MIN MAX MIN MAX A 2.70 3.00 0.106 0.118 B 0.25 0.50 0.010 0.020 C 1.90(typ) 0.075(typ) D 0.95(typ) 0.037(typ) E 1.50 1.70 0.059 0.067 F 1.05 1.35 0.041 0.053 H 2.60 3.00 0.102 0.118 L TSM3443 Preliminary MILLIMETERS 0.60(typ) 0.024(typ) 2006/02 rev. A