UNISONIC TECHNOLOGIES CO., LTD UT40N04 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR DESCRIPTION The UTC 40N04 is an N-channel enhancement mode FET using advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low on-Resistance * Fast Switching Speed * Halogen Free SYMBOL D G S ORDERING INFORMATION Ordering Number UT40N04G-TN3-R Note: G: Gate, D: Drain, S: Source Package TO-252 www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 G Pin Assignment 2 D 3 S Packing Tape Reel 1 of 3 QW-R502-467.a UT40N04 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy Power Dissipation SYMBOL VDS VGS TC=25°C TC=70°C ID IDM IAS EAS L=0.1mH TC=25°C TC=70°C PD RATINGS 40 ±20 25 20 75 27 37 30 20 -55~150 -55~150 UNIT V V A mJ W Operating Junction Temperature TJ °C Storage Temperature TSTG °C Note:1. Pulse width limited by maximum junction temperature. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 40 4.1 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current IDSS Gate- Source Leakage Current On-State Drain Current (Note 1) ON CHARACTERISTICS Gate Threshold Voltage IGSS ID(ON) Static Drain-Source On-State Resistance (Note 1) Forward Transconductance (Note 1) Gate Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 2) VGS(TH) RDS(ON) gFS Rg CISS COSS CRSS TEST CONDITIONS ID=250µA, VGS=0V VDS=32V, VGS=0V VDS=30V, VGS=0V, TJ=125°C VDS=0V, VGS=±20V VDS=5V, VGS=10V 40 VDS=VGS, ID=250µA VGS=5V, ID=8A VGS=7V, ID=8A VGS=10V, ID=10A VDS=5V, ID=10A VGS=0V, VDS=0V, f=1.0MHz 2 VGS=0V, VDS=20V, f=1.0MHz QG (VGS=10V) QG (VGS=4.5V) VDS=0.5V(BR)DSS, ID=10A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=10V, VDS=20V, ID≈-1A, Rise Time tR RGS=6Ω, RL=1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Current IS Drain-Source Diode Forward Voltage VSD IF=10A, VGS=0V (Note 1) Reverse Recovery Time tRR IF=10A, dIF/dt=100A/µs Reverse Recovery Charge QRR Note: 1. Pulsde test: Pulse width ≤300µsec, duty cycle ≤2%. 2. Independent of Operating Temperature. Total Gate Charge UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 1 10 ±250 75 2.4 26 22 19 30 1.55 3 50 45 29 nA A V mΩ S Ω 1150 157 80 pF 19 9 4.5 3 10 6 26 6 38 29 µA nC ns ns ns ns 23 A 1.3 V ns nC 2 of 3 QW-R502-467.a UT40N04 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-467.a