Central 2N5193 2N5194 2N5195 PNP SILICON POWER TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5193 Series types are Silicon PNP Power Transistors, manufactured by the epitaxial base process, designed for medium power amplifier and switching applications. These devices are complementary to the NPN 2N5190 Series types. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage SYMBOL VCBO 2N5193 40 2N5194 60 2N5195 80 UNITS V Collector-Emitter Voltage VCEO 40 60 80 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 4.0 A Base Current IB 1.0 A Power Dissipation (TC=25°C) Operating and Storage Junction Temperature PD 40 W TJ, Tstg -65 to +150 °C ΘJC 3.12 °C/W Thermal Resistance (Junction to Case) ELECTRICAL CHARACTERISTICS: (TC=25°C) SYMBOL TEST CONDITIONS ICBO VCB=Rated VCBO MIN MAX 100 UNITS μA ICEX ICEO VCE=Rated VCEO, VEB=1.5V VCE=Rated VCEO 100 μA 1.0 mA IEBO BVCEO VEB=5.0V 1.0 mA IC=100mA (2N5193) IC=100mA (2N5194) 40 V 60 V 80 VCE(SAT) IC=100mA (2N5195) IC=1.5A, IB=150mA VCE(SAT) VBE(ON) IC=4.0A, IB=1.0A VCE=2.0V, IC=1.5A hFE VCE=2.0V, VCE=2.0V, BVCEO BVCEO hFE hFE IC=1.5A (2N5193, 2N5194) IC=1.5A (2N5195) V 0.6 1.4 V 1.2 V 25 100 20 80 hFE VCE=2.0V, IC=4.0A (2N5193, 2N5194) VCE=2.0V, IC=4.0A (2N5195) 7.0 fT VCE=10V, IC=1.0A, f=1.0MHz 2.0 V 10 MHz R1 (10-February 2009) Central 2N5193 2N5194 2N5195 TM Semiconductor Corp. PNP SILICON POWER TRANSISTORS TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING: FULL PART NUMBER R1 (10-February 2009)