BD439 BD441 BD440 BD442 Central NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD439, BD440 series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for medium power, low speed switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO BD439 BD440 60 BD441 BD442 80 UNITS V 60 80 V 60 80 V Collector-Emitter Voltage VCES VCEO Emitter-Base Voltage VEBO 5.0 V IC 4.0 A ICM 7.0 A IB 1.0 A PD TJ, Tstg 36 W -65 to +150 °C 100 °C/W 3.5 °C/W Continuous Collector Current Peak Collector Current (t≤10ms) Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance ELECTRICAL CHARACTERISTICS: (TC=25°C) SYMBOL TEST CONDITIONS ICBO VCB=Rated VCBO ICES IEBO BVCEO BVCEO VCE(SAT) VBE(ON) hFE hFE hFE hFE ΘJA ΘJC MIN VCE=Rated VCEO VEB=5.0V IC=100mA (BD439, BD440) IC=100mA (BD441, BD442) UNITS μA 100 μA 1.0 mA 60 V 80 IC=2.0A, IB=200mA VCE=1.0V, IC=2.0A VCE=5.0V, IC=10mA (BD439, BD440) VCE=5.0V, IC=10mA (BD441, BD442) VCE=1.0V, IC=500mA MAX 100 V 0.8 V 1.5 V 20 15 40 25 hFE VCE=1.0V, IC=2.0A (BD439, BD440) VCE=1.0V, IC=2.0A (BD441, BD442) fT VCE=1.0V, IC=250mA 3.0 15 MHz R1 (2-February 2009) Central BD439 BD441 BD440 BD442 TM Semiconductor Corp. NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING: FULL PART NUMBER R1 (2-February 2009)