Central TIP35 TIP35A TIP35B TIP35C NPN TIP36 TIP36A TIP36B TIP36C PNP TM Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35, TIP36 Series types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. MARKING: FULL PART NUMBER TO-218 TRANSISTOR CASE SYMBOL TIP35 TIP36 TIP35A TIP36A TIP35B TIP36B TIP35C TIP36C UNITS VCBO 40 60 80 100 V Collector-Emitter Voltage VCEO 40 60 80 100 V Emitter-Base Voltage VEBO 5.0 V IC ICM 25 A 40 A Base Current IB 5.0 A Power Dissipation PD 125 W TJ, Tstg -65 to +150 °C ΘJC 1.0 °C/W MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Continuous Collector Current Peak Collector Current Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=30V, (TIP35, TIP35A, TIP36, TIP36A) SYMBOL ICEO MAX 1.0 UNITS mA 1.0 mA ICEO ICES VCE=60V, (TIP35B, TIP35C, TIP36B, TIP36C) VCE=Rated VCEO 0.7 mA IEBO BVCEO VEB=5.0V 1.0 mA BVCEO BVCEO BVCEO VCE(SAT) VCE(SAT) VBE(ON) VBE(ON) hFE hFE hfe fT IC=30mA (TIP35, TIP36) IC=30mA (TIP35A, TIP36A) IC=30mA (TIP35B, TIP36B) IC=30mA (TIP35C, TIP36C) IC=15A, IC=25A, 40 V 60 V 80 V 100 V IB=1.5A IB=5.0A VCE=4.0V, IC=15A VCE=4.0V, IC=25A VCE=4.0V, VCE=4.0V, IC=1.5A IC=15A VCE=10V, IC=1.0A, f=1.0kHz VCE=10V, IC=1.0A, f=1.0MHz 1.8 V 4.0 V 2.0 V 4.5 V 25 10 100 25 3.0 MHz R1 (29-October 2008) Central TM TIP35 TIP35A TIP35B TIP35C NPN TIP36 TIP36A TIP36B TIP36C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTORS TO-218 TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER Note: Tab is common to lead 2. MARKING: FULL PART NUMBER R1 (29-October 2008)