MJE200 MJE210 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current 40 UNITS V 25 V VEBO IC 8.0 V 5.0 A ICM IB 10 A 1.0 A PD PD 1.5 W 15 W -65 to +150 °C Thermal Resistance TJ, Tstg ΘJA 83.4 °C/W Thermal Resistance ΘJC 8.34 °C/W MAX 100 UNITS nA 100 μA 100 nA Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO ICBO IEBO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=40V VCB=40V, TJ=125°C VEB=8.0V IC=10mA 25 IC=500mA, IB=50mA IC=2.0A, IB=200mA IC=5.0A, IB=1.0A IC=5.0A, IB=1.0A VCE=1.0V, IC=2.0A VCE=1.0V, IC=500mA VCE=1.0V, IC=2.0A VCE=2.0V, IC=5.0A 70 VCE=10V, IC=100mA, f=10MHz VCB=10V, IE=0, f=100kHz (MJE200) 65 Cob Cob VCB=10V, IE=0, f=100kHz (MJE210) hFE hFE fT 45 V 0.3 V 0.75 V 1.8 V 2.5 V 1.6 V 180 10 MHz 80 120 pF pF R1 (2-May 2012) MJE200 MJE210 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (2-May 2012) w w w. c e n t r a l s e m i . c o m