CJD41C NPN CJD42C PNP COMPLEMENTARY SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power amplifier and high speed switching applications. MARKING CODE: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA 100 100 5.0 6.0 10 2.0 20 1.75 UNITS V V V A A A W W -65 to +150 6.25 71.4 °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS ICEO VCE=60V MIN 50 µA ICES VCE=100V 10 µA IEBO VEB=5.0V 500 µA BVCEO IC=30mA VCE(SAT) IC=6.0A, IB=600mA 1.5 V VBE(ON) VCE=4.0V, IC=6.0A 2.0 V hFE VCE=4.0V, IC=300mA hFE VCE=4.0V, IC=3.0A 15 fT VCE=10V, IC=500mA, f=1.0MHz 3.0 hfe VCE=10V, IC=500mA, f=1.0kHz 20 100 V 30 75 MHz R1 (26-September 2002) Central TM Semiconductor Corp. CJD41C NPN CJD42C PNP COMPLEMENTARY SILICON POWER TRANSISTOR DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING CODE: FULL PART NUMBER R1 (26-September 2002)