CENTRAL CEN-U07

CEN-U05 CEN-U06 CEN-U07 NPN
CEN-U55 CEN-U56 CEN-U57 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEN-U05/U55
series types are complementary silicon power
transistors designed for general purpose audio amplifier
applications. These devices are electrically equivalent to
National Semiconductor’s NSDU05, NSDU06, NSDU07,
NSDU55, NSDU56, and NSDU57.
MARKING: FULL PART NUMBER
TO-202 CASE
APPLICATIONS:
• Designed for general purpose high
voltage amplifiers and drivers
FEATURES:
• High Collector-Emitter breakdown voltage
• High 10W power dissipation
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
ΘJA
ΘJC
ELECTRICAL CHARACTERISTICS: (TC=25°C unless
SYMBOL
TEST CONDITIONS
ICBO
VCB=Rated VCBO
IEBO
VEB=4.0V
BVCEO
IC=1.0mA (CEN-U05, CEN-U55)
BVCEO
IC=1.0mA (CEN-U06, CEN-U56)
BVCEO
IC=1.0mA (CEN-U07, CEN-U57)
VCE(SAT)
IC=250mA, IB=10mA
VCE(SAT)
IC=250mA, IB=25mA
VBE(ON)
VCE=1.0V, IC=250mA
hFE
VCE=1.0V, IC=50mA
hFE
VCE=1.0V, IC=250mA
hFE
VCE=1.0V, IC=500mA
fT
VCE=5.0V, IC=200mA, f=100MHz
Cob
VCB=10V, IE=0, f=1.0MHz
CEN-U05
CEN-U55
60
60
otherwise noted)
MIN
CEN-U06 CEN-U07
CEN-U56 CEN-U57
80
100
80
100
4.0
2.0
10
1.75
-65 to +150
71.4
12.5
MAX
0.1
100
UNITS
V
V
V
A
W
W
°C
°C/W
°C/W
0.5
0.35
1.2
UNITS
μA
μA
V
V
V
V
V
V
30
MHz
pF
60
80
100
80
50
20
50
R2 (20-January 2012)
CEN-U05 CEN-U06 CEN-U07 NPN
CEN-U55 CEN-U56 CEN-U57 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-202 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
Tab is common to pin 3
MARKING:
FULL PART NUMBER
R2 (20-January 2012)
w w w. c e n t r a l s e m i . c o m