Ordering number : ENA2135 Bi-CMOS IC For Fan Motor LV8121V 3-phase Brushless Motor Driver Overview The LV8121V is a three-phase brushless motor driver that uses a PWM drive technique. The motor speed is controlled by changing the PWM duty that based on an analog voltage input. This motor driver includes an automatic return constraint protection circuit and is optimal for driving fan motors. Features • PWM control based on an analog voltage input (the CTL voltage), synchronous rectification • One Hall-effect sensor FG output • Automatic return constraint protection circuit (ON/OFF=1/15) • Start/Stop switching circuit, Forward/Reverse switching circuit • Current limiter circuit, Low-voltage shutdown protection circuit, Thermal shutdown protection circuit Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Supply voltage Symbol Conditions Ratings Unit VCC max VCC pin 36 V VG max VG pin 42 V Output current IO max t ≤ 500ms 3.5 A Allowable power dissipation Pd max Mounted on a specified board * 1.7 W Operation temperature Topr -30 to +100 °C Storage temperature Tstg -55 to +150 °C Junction temperature Tj max 150 °C * Specified board : 114.3mm × 76.1mm × 1.6mm, glass epoxy board Caution 1) Absolute maximum ratings represent the values which cannot be exceeded for any length of time. Caution 2) Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current, high voltage, or drastic temperature change, the reliability of the IC may be degraded. Please contact us for the further details. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. O2412NKPC 20120919-S00001 No.A2135-1/14 LV8121V Recommendation Operating Conditions at Ta = 25°C Parameter Symbol Conditions Ratings Unit Supply voltage range VCC 8.0 to 35 5V constant voltage output current IREG 0 to -6 mA V HB output current IHB 0 to -7 mA FG applied voltage VFG 0 to 6 V FG output current IFG 0 to 5 mA Electrical Characteristics at Ta = 25°C, VCC = 24V Parameter Symbol Conditions Supply current 1 ICC1 Supply current 2 ICC2 At stop RON(L1) RON(L2) Upper side output ON resistance Mid output current Lower side diode forward voltage Ratings min typ Unit max 3.5 4.7 mA 1.1 1.5 mA IO = 1.2A 0.26 0.43 Ω IO = 2.0A 0.26 0.43 Ω RON(H1) IO = -1.2A 0.27 0.45 Ω RON(H2) IO = -2.0A 0.27 0.45 Ω IO(M) VO = 12V 120 170 μA VD(L1) ID = -1.2A 0.9 1.20 V VD(L2) ID = -2.0A 1.0 1.35 V VD(H1) ID = 1.2A 0.9 1.20 V VD(H2) ID = 2.0A 1.0 1.35 V Output block Lower side output ON resistance Upper side diode forward voltage 5V Constant voltage Output Output voltage VREG Line regulation ΔV(REG1) VCC = 8.0 to 35V 4.6 Load regulation ΔV(REG2) IO = -1 to -6mA 5.0 5.4 V 20 100 mV 5 100 mV Hall Amplifier Input bias current IB(HA) Common mode input voltage range 1 VICM1 Common mode input voltage range 2 VICM2 -2 When Hall-effect sensors are used When one-side inputs are biased μA -0.1 0.3 VREG-1.7 V 0 VREG V (Hall IC application) Hall input sensitivity VHIN SIN wave 80 mVp-p Hysteresis width ΔVIN(HA) 9 20 35 Input voltage L → H VSLH 3 8 16 mV Input voltage H → L VSHL -20 -12 -5 mV VREG-0.27 VREG-0.18 VREG-0.10 mV HB pin Output voltage VHBO IHB = -0.5mA Output leakage current IL(HB) VO = 0V V μA -10 Reference Oscillator (CT pin) High level voltage VH(CT) VREG×0.54 VREG×0.56 VREG×0.58 Low level voltage VL(CT) VREG×0.43 VREG×0.45 VREG×0.47 V V Amplitude V(CT) VREG×0.10 VREG×0.11 VREG×0.12 V Oscillation frequency f(REF) C = 56pF, R = 11kΩ 1.71 2.11 2.51 High level output voltage VOH(RT) IRT = -0.3mA VREG-0.15 VREG-0.1 VREG-0.05 V Low level output voltage VOL(RT) IRT = 0.3mA 0.05 0.1 0.15 V VCC+4.1 VCC+4.7 VCC+5.4 V VCC-1.4 VCC-1.1 VCC-0.7 V 0.55 0.75 0.90 MHz RT pin Charge Pump Output (VG pin) Output voltage VGOUT CP1 pin High level output voltage VOH(CP1) ICP1 = -2mA Low level output voltage VOL(CP1) ICP1 = 2mA Charge pump frequency f(CP1) f(REF)/32 V MHz Continued on next page. No.A2135-2/14 LV8121V Continued from preceding page. Parameter Symbol Conditions Ratings min typ Unit max PWM Oscillator High level voltage VH(PWM) 2.75 3.05 3.35 V Low level voltage VL(PWM) 1.20 1.35 1.50 V Amplitude V(PWM) 1.40 1.70 2.00 V Charge current ICHG VPWM = 2.1V Oscillation frequency f(PWM) C = 1800pF -80 -63 -45 μA 15.1 19.2 24.8 kHz -2 -0.1 LIM pin Input bias current IB(LIM) μA CTL pin Input voltage Input bias current VCTL1 Output duty: 100% 2.74 3.07 3.40 VCTL2 Output duty: 0% 1.15 1.33 1.51 -2 -0.2 VRF 0.23 0.25 0.275 V VH(CSD) 2.75 3.05 3.35 V IB(CTL) V V μA Current limiter operation Limiter voltage CSD Oscillator High level voltage Low level voltage VL(CSD) 1.43 1.68 1.93 V Amplitude V(CSD) 1.12 1.37 1.62 V Charge current ICSD1 -13.5 -10.5 -7.0 μA Discharge current ICSD2 8.0 11.5 14.5 μA Oscillation frequency f(CSD) 62 83 104 Hz 150 180 °C 40 °C C = 0.047μ F Thermal shutdown operation Thermal shutdown operation TSD temperature Hysteresis width Design target value * (Junction temperature) ΔTSD Design target value * (Junction temperature) FG pin Low level output voltage VOL(FG) IFG = 2mA Output leakage current IL(FG) VFG = 6V 0.1 0.3 V 10 μA Low-voltage shutdown protection circuit Operating voltage VSDL 6.52 7.03 7.54 V Release voltage VSDH 6.98 7.49 8.00 V Hysteresis width ΔVSD 0.36 0.46 0.56 V F/R pin High level input voltage range VIH(FR) 2.0 VREG V Low level input voltage range VIL(FR) 0 1.0 V Input open voltage VIO(FR) VREG-0.5 VREG V Hysteresis width VIS(FR) 0.15 0.35 0.5 V High level input current IIH(FR) VF/R = VREG -10 0 10 μA Low level input current IIL(FR) VF/R = 0V -80 -50 -35 μA VREG V V S/S pin High level input voltage range VIH(SS) 2.0 Low level input voltage range VIL(SS) 0 1.0 Input open voltage VIO(SS) VREG-0.5 VREG V Hysteresis width VIS(SS) 0.15 0.5 V 0.35 High level input current IIH(SS) VS/S = VREG -10 0 10 μA Low level input current IIL(SS) VS/S = 0V -80 -50 -35 μA * : These items are design target value and are not tested. No.A2135-3/14 LV8121V Package Dimensions unit : mm (typ) 3333A TOP VIEW SIDE VIEW BOTTOM VIEW 15.0 44 23 (3.5) 0.5 5.6 7.6 (4.7) 0.65 22 0.22 0.2 1.7 MAX 1 (0.68) 0.05 (1.5) SIDE VIEW Pd max -- Ta 2.0 Allowable power dissipation, Pd max -- W SANYO : SSOP44K(275mil) Mounted on the specified board: 114.3×76.1×1.6mm3 glass epoxy 1.7 1.5 1.0 0.68 0.5 0 --30 0 30 60 90 120 Ambient temperature, Ta -- °C CSD FG HB CT RT GND1 VREG CP2 CP1 VG VCC1 VCC2 NC RFS RF NC NC GND2 NC OUT1 OUT1 OUT2 Pin Assignment 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PWM LIM CTL S/S IN3- IN3+ IN2- IN2+ IN1- IN1+ NC VCC2 NC F/R RF NC NC GND2 NC OUT3 OUT3 OUT2 LV8121V Top view No.A2135-4/14 VREG VIN(CTL) PWM LIM CTL RT CT REF OSC COMP S/S S/S S/S FG CIRCUIT CSD CIRCUIT PWM OSC FG CSD VREG F/R F/R F/R IN1 TSD IN3 LVSD RFS CURR LIM CONTROL CIRCUIT HALL AMP & MATRIX IN2 RF Die-Pad VREG CHARGE PUMP DRIVER HB HB GND1 GND2 OUT3 OUT2 OUT1 VG CP2 CP1 VCC2 VCC1 GND1 VREG + VCC LV8121V Block Diagram No.A2135-5/14 LV8121V Pin Function Pin No. 1 Pin name PWM Function Pin to set the PWM oscillation frequency. Connect a capacitor between this pin and GND1. Equivalent circuit VREG A frequency of about 19kHz can be set by using a 1800pF capacitor. 200Ω 1 950Ω 2 LIM Pin to set the minimum output duty. VREG A minimum output duty can be set by inputting a fixed voltage to the LIM pin through resistor division of VREG. Connect the LIM pin to GND1 if this pin is not used, then the minimum output duty becomes 0 %. 500Ω 3 CTL Pin to control the output duty. 2 VREG The output duty is determined by the result of comparing the CTL pin voltage with the PWM oscillation waveform. When the CTL pin is open, the output duty becomes 100%. Therefore, connect a pull-down resistor to prevent open. 500Ω 4 S/S Start / Stop control pin. 3 VREG Low : 0V to 1.0V High : 2.0V to VREG Goes high when left open. 100kΩ Low for start. The hysteresis width is about 0.35V. 10kΩ 5 6 7 8 9 10 IN3IN3+ Hall input pins. IN2IN2+ as the low level input for the opposite state. IN1IN1+ The input is seen as the high level input when IN+ > IN-, and 4 VREG If noise on the Hall signals is a problem, connect a capacitor between the corresponding IN+ and IN- inputs. 5 6 7 8 9 10 Continued on next page. No.A2135-6/14 LV8121V Continued from preceding page. Pin No. 14 Pin name F/R Function Forward / Reverse control pin. Low : 0V to 1.0V Equivalent circuit VREG High : 2.0V to VREG Goes high when left open. 100kΩ Low for forward. The hysteresis width is about 0.35V. 14 10kΩ 34 VCC1 Power supply pin. (For systems other than the motor drive output.) Connect a capacitor between this pin and GND1 for stabilization. 12, 33 VCC2 Motor drive output power supply pins. 20, 21 OUT3 Motor drive output pins. 22, 23 OUT2 24, 25 OUT1 15, 30 RF VCC2 12 33 20 21 22 23 Source pins of the lower side output FET. 24 25 Connect a resistor (Rf) between these pins and GND. 18, 27 GND2 18 27 Motor drive output circuit GND pins. 15 30 31 RFS Output current detection pin. Connect the RFS pin to the RF pin. VREG 5kΩ 35 VG Charge pump output pin. Connect a capacitor between this pin and VCC2. 31 VCC2 300Ω 37 CP2 Pin to connect the capacitor for charge pump. Connect a capacitor between this pin and CP1. 35 37 Continued on next page. No.A2135-7/14 LV8121V Continued from preceding page. Pin No. 36 Pin name CP1 Function Equivalent circuit Pin to connect the capacitor for charge pump. VCC2 Connect a capacitor between this pin and CP2. 300Ω 38 VREG 5V constant voltage output pin. 36 VCC1 (Power supply pin for the control circuits.) Connect a capacitor between this pin and GND1 for 50Ω stabilization. 38 39 GND1 GND pin for the control circuits. 40 RT Pin to set the reference oscillation frequency. Connect a resistor to charge / discharge the capacitor of CT VREG between this pin and CT. 40 41 CT 200Ω 41 Pin to set the reference oscillation frequency. Connect a capacitor between this pin and GND1. 42 HB Hall bias switch pin. Goes off when the S/S input is the stop mode. VREG 250Ω 42 100kΩ 43 FG One hall-effect sensor FG output pin. (This is an open-drain output.) VREG 43 Continued on next page. No.A2135-8/14 LV8121V Continued from preceding page. Pin No. 44 Pin name CSD Function Equivalent circuit Pin to set the operating time of the constraint protection. VREG Connect a capacitor between this pin and GND1. 500Ω 11, 13 NC 44 No connection pins. 16, 17 19, 26 28, 29 32 Backside Die-Pad metal Exposed Die-Pad. The metal of the IC’s backside is the Exposed Die-pad and is internally connected to GND1, GND2. For stabilization, connect the Exposed Die-pad to GND1 externally. Three-phase logic truth table (A high level input is the state where IN+ > IN−) F/R = L F/R = H IN1 IN2 IN3 IN1 1 H L H L 2 H L L L 3 H H L L 4 L H L H 5 L H H 6 L L H IN2 Output IN3 OUT1 OUT2 OUT3 H L H H L H M L M H L L H M L H H H L M H L L H M L H H L M H L No.A2135-9/14 LV8121V Description of LV8121V 1. Motor Drive Output Circuit The LV8121V provides a charge pump circuit and implements both upper side and lower side N-channel power FET drive circuit. This IC employs the direct PWM drive technique. The motor speed is controlled by changing the output duty according to an analog voltage input (CTL). The upper side N-channel power FET is switched so that the output duty tracks the CTL voltage. The PWM frequency is determined by the capacitor connected between the PWM pin and GND1. When the PWM switching of the upper side N-channel power FET is off, the lower side N-channel power FET is turned on (synchronous rectification). Therefore, it is possible to reduce the temperature increase of the lower side N-channel power FET. 2. PWM Oscillator The PWM frequency is set by the oscillation frequency of the PWM pin. When a capacitor C [F] is connected between the PWM pin and GND1, the PWM frequency (fPWM) is calculated as follows. fPWM = 1/(28900 × C) When a 1800pF capacitor is connected, this frequency becomes about 19kHz. By the variance of the IC, “28900” of the above formula has varied from 22400 to 36800. If the PWM frequency is too high, since the switching power loss will be large, the IC temperature increase will be excessive. The PWM frequency therefore should be normally kept below 50kHz, which is achieved with a capacitor C of 1000pF or higher. The GND lead of the connected capacitor to the PWM pin should be connected as close as possible to the GND1 pin. 3. Output Duty The CTL voltage and the PWM oscillation waveform are compared to determine the output duty of the upper side N-channel power FET. If the LIM pin is not used (LIM=GND), the output duty becomes 0% when the CTL voltage is lower than about 1.3V and 100% when it exceeds about 3.1V. For the application that inputs a fixed voltage to the LIM pin, the LIM voltage and the PWM oscillation waveform are compared to determine the minimum output duty. Accordingly, even if the CTL voltage is lower than the LIM voltage, the output duty does not decrease below the minimum output duty. PWM oscillation waveform LIM voltage CTL voltage compared result ON Upper side FET (PWM) OFF ON Lower side FET (synchronous rectification) OFF If a minus voltage is applied to the CTL pin, this pin current must be limited within 2mA by inserting the resistor of about 200Ω. When the CTL pin is open, the output duty becomes 100%. Therefore, connect a pull-down resistor to prevent open. If the output duty is fast reduced by dropping the CTL voltage quickly when the motor speed is changed from high to low, since this IC employs the synchronous rectification, the lower side N-channel power FET can be the short brake condition that turns on two phases. If the lower side N-channel power FET (synchronous rectification) is switched from on to off while this condition, the motor current may flow on the power supply side, and the power supply voltage may bounce. The bounce of the power supply voltage is different on the motor speed, the varied range of the CTL voltage and the capacitance of the power supply line. Therefore, check sufficiently that the bounce of the power supply voltage does not exceed the maximum rating when the CTL voltage is changed. Continued on next page. No.A2135-10/14 LV8121V Continued from preceding page. In case of limiting the bounce of the power supply voltage, the maximum voltage of To VG the VCC can be limited according to the following method. The maximum voltage of 160kΩ 5.1kΩ the VG is limited by using Zener diode, NPN transistor and some resistors. Normally, the relation between VG and VCC becomes “VG = VCC + 4.7V”. If VCC rises above 33kΩ 5.6V “VG max - 4.7V” when VG is limited to VG max, this relation does not keep. Zener Because the sufficient gate voltage cannot be applied to the upper side N-channel power FET when this relation does not keep, this IC includes the protective function that turns off the upper side N-channel power FET. Accordingly, if VCC rises above “VG max - 4.7V” when VG is limited to VG max, the upper side N-channel power FET is turned off, and the VCC bounce caused by dropping the CTL voltage can be limited to “VCC = VG max - 4.7V”. When the above reference circuit is used, VG is limited to about 36.7V, and VCC is limited to about 32.0V. But this function does not guarantee that any VCC bounce can be limited. If VCC is steeply bounced by dropping the CTL voltage, this function may not limit the VCC bounce. 4. Current Limiter Circuit The current limiter circuit limits the output current peak to the value determined by “I = VRF/Rf” (VRF = 0.25V typ., Rf: current detection resistor). When the current limiter is operating, the upper side N-channel power FET is switched, and the output current is suppressed by reducing the output duty. 5. Reference Oscillator Connect a 56pF capacitor between CT and GND1, and a 11kΩ resistor between RT and CT. Then, the reference oscillation frequency becomes about 2.1MHz. The reference oscillation frequency functions as a reference clock for the internal logic circuit. The charge pump circuit boosts the voltage using a frequency that is 1/32 of the reference oscillation frequency. 6. Start/Stop Switching Circuit When the S/S pin is set to the low level, start/stop switching circuit is the start mode. Inversely, when the S/S pin is set to the high level or open, start/stop switching circuit is the stop mode. This IC goes into a power saving state that reduces the supply current at the stop mode. In the power saving state, the bias current is removed from most of the circuits in the IC. The operating circuits in the power saving state are limited to the start/stop switching circuit and the 5V constant voltage output. The other circuits do not operate. Both upper side and lower side N-channel power FET are turned off in the power saving state. If a minus voltage is applied to the S/S pin, this pin current must be limited within 2mA by inserting the resistor of about 200Ω. 7. Forward / Reverse Switching Circuit The motor rotation direction can be switched by using the F/R pin. However, the following notes must be observed if the F/R pin is switched while the motor is rotating. • This IC is designed to avoid the through current when the direction is switched. However, the bounce of the VCC voltage (due to the motor current that flows instantly on the power supply side) may be caused during the direction switching. If this bounce is a problem, the capacitance inserted between VCC and GND must be increased. • If the motor current after the direction switching exceeds the current limiter value, the upper side N-channel power FET will be turned off, but the lower side N-channel power FET will be the short brake condition. On the short brake condition, the current determined by the motor back EMF voltage and the coil resistance will flow. Because the current limiter circuit of this IC cannot limit this current, applications must be designed so that this current does not exceed the maximum rating (3.5A). When the motor speed is higher, the direction switching is dangerous. If a minus voltage is applied to the F/R pin, this pin current must be limited within 2mA by inserting the resistor of about 200Ω. No.A2135-11/14 LV8121V 8. Hall Input Signal The input amplitude of 100mVp-p or more (differential) is desirable in the Hall inputs. The closer the input wave-form is to a square wave, the required input amplitude is lower. Inversely, the closer the input wave-form is to a triangular wave, the higher input amplitude is required. Also, note that the input DC voltage must be set within the common mode input voltage range. For the Hall IC application, one side (either the + or – side) of the Hall inputs must be fixed at a voltage within the common mode input voltage range that applies when the Hall-effect sensors are used, and the input voltage range for the other side becomes 0V to VREG. If noise on the Hall signals is a problem, that noise must be excluded by inserting capacitor between the Hall inputs as close as possible to these pins. When the Hall inputs for all three phases are in the same state, all the outputs (the both upper side and lower side N-channel power FET) are turned off. 9. FG Output The FG pin is the pulse output that has the same frequency as Hall input IN1 (one Hall-effect sensor FG output). 10. HB Pin The HB pin is the 5V constant voltage output that combines the switch function. This pin is connected to the base of external NPN transistor that supplies the bias of the Hall-effect sensors. If the HB output is turned off, this external NPN transistor is too turned off, and the bias of the Hall-effect sensors is cut (Hall bias switch). The HB output is turned off and is made pull-down by a 100kΩ internal resistor when the S/S pin is the stop mode. Therefore, the bias of the Hall-effect sensors can be cut when the S/S pin is the stop mode. In case the LIM pin is not used (LIM = GND), if the CTL voltage falls below 0.7V, the HB output is turned off, and the bias of the Hall-effect sensors is cut. In case the minimum output duty is determined by the LIM pin, even if the CTL voltage falls below 0.7V, the HB output is not turned off. If the HB pin is not used, keep open. 11. Constraint Protection Circuit The constraint protection circuit operates to turn the motor drive (the upper side N-channel power FET) on or off repeatedly in the motor constrained state. Therefore, the IC and the motor are protected. The drive on/off time can be set by adjusting the oscillation frequency of the CSD pin with external capacitor. When a capacitor C [μF] is connected between the CSD pin and GND1, the drive on/off time is calculated as follows. TCSD1 (drive on time) = 8.21 × C TCSD2 (drive off time) = TCSD1 × 15 When a 0.047μF capacitor is connected, this protection function will iterate an on/off period in which drive is on for about 0.39sec and off for about 5.8sec. By the variance of the IC, “8.21” of the above formula has varied from 5.41 to 11.01. If the switching from L to H of the Hall input IN1 (the rising edge on the FG output) is not caused during the drive on time, this protection function turns the motor drive off, and returns the motor drive on after the drive off time. If the drive on time to be set is too short, this protection function operates at a normal motor start-up, and the motor may not speed up since this protection function iterates an on/off period. Also, if the motor speed is too low, this protection function operates when one cycle of the Hall input IN1 is longer than the drive on time. The drive on time must be set to a sufficient time so that this protection function does not operate except the motor constrained state. The oscillation waveform of the CSD pin is used for some circuits in addition to the constraint protection circuit. Therefore, it is desirable to oscillate the CSD pin even if the constraint protection function is unnecessary. The CSD pin combines the function as the initial reset pin. The time that the CSD voltage is charged to about 1.25V is determined as the initial reset. At the initial reset, all the outputs (the both upper side and lower side N-channel power FET) are turned off. If the constraint protection function is not used, the oscillation of the CSD pin must be stopped by connecting a 220kΩ resistor and a 0.01μF capacitor in parallel between the CSD pin and GND1. However, when the oscillation of the CSD pin is stopped, note that some functions do not operate in the following cases. • If the motor does not rotate at the motor start-up because the motor is constrained, the upper side N-channel power FET may be switched by the current limiter. But, the synchronous rectification does not operate when the oscillation of the CSD pin is stopped.Continued on next page. • In case the LIM pin is not used (LIM = GND), even if the CTL voltage falls below 0.7V, the HB output is not turned off when the oscillation of the CSD pin is stopped. No.A2135-12/14 LV8121V 12. Low-voltage Shutdown Protection Circuit The IC includes a low-voltage shutdown protection circuit to protect against incorrect operation when the VCC power supply is switched on or if the VCC voltage falls below the allowable operating range. When the VCC voltage falls below the specified voltage (VSDL), this protection function operates, and all the outputs (the both upper side and lower side N-channel power FET) are turned off. When the VCC voltage rises above the release voltage (VSDH), this protection function is released. 13. Thermal Shutdown Protection Circuit If the junction temperature rises to the specified temperature (TSD), this protection function operates, and the upper side N-channel power FET is turned off. If the temperature decrease falls to more than the hysteresis width (ΔTSD), this protection function is released. 14. Power Supply Stabilization Because a large switching current flows in the VCC line, the line inductance and other factors can lead to VCC voltage fluctuations. Sufficient capacitance should be provided between VCC and GND for stabilization. When long wiring routes are used, choose a capacitor with even larger capacitance. Ceramic capacitors of about 0.2μF must be connected between the VCC1 pin and the GND1 pin as close as possible to these pins for excluding noise. 15. VREG Pin The VREG pin is the power supply for the control circuits. Therefore, a capacitor of about 0.1μF must be connected between the VREG pin and the GND1 pin as close as possible to these pins for stabilization. 16. VG Pin When the S/S pin is the stop mode, the VG pin is the high-impedance condition in the IC. If the ambient temperature of the capacitor inserted between VG and VCC2 becomes high when the VG pin is the high-impedance condition, since the voltage charged in this capacitor may rise due to the temperature characteristic of the capacitor, the VG voltage may rise. Therefore, prevent the VG voltage from rising by inserting the resistor of about 200kΩ between VG and VCC2 or VG and GND1 so that the VG pin is not the high-impedance condition. 17. Notes on wiring of a Printed Circuit Board Two pins are provided for each of pins (VCC2, RF, OUT1, OUT2, OUT3, GND2) where large current flows. Both of these pins should be externally connected. 18. The Metal of the IC’s Backside The metal of the IC’s backside is the Exposed Die-pad and is internally connected to GND1, GND2. For stabilization, connect the Exposed Die-pad to GND1 externally. The IC’s generation of heat can be efficiently diffused to a printed circuit board by soldering the Exposed Die-pad to the copper of the printed circuit board. 19. NC Pins The NC pins are electrically open. These pins may be used for wiring routes. No.A2135-13/14 LV8121V Application (Reference value) 2SC5964 510Ω/0.5W Exposed Die-Pad 100Ω 27kΩ 5.1kΩ 160kΩ 2SC 5964 5.6V Zener 33kΩ 0.1μF 15kΩ 24V 56pF FG 0.033μF 0.1μF 11kΩ OUT1 OUT1 OUT2 NC OUT3 OUT3 OUT2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 NC GND2 2 VCC2 1800pF 1 VCC1 NC 23 NC 24 NC 25 NC 26 RF VG 27 RF CP1 28 RFS CP2 29 F/R VREG 30 NC GND1 31 NC RT 32 VCC2 CT 33 NC HB 34 IN1+ 35 IN1- 36 IN2+ 37 IN2- 38 IN3+ 39 IN3- 40 S/S 41 CTL 42 LIM 43 PMW 44 FG 1500pF CSD 0.047μF 47μF 0.17Ω/1W 0.2μF 10kΩ + 0.1μF GND2 100Ω 100kΩ 51Ω 200Ω LV8121 CTL S/S 4700pF 200Ω F/R SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2012. Specifications and information herein are subject to change without notice. PS No.A2135-14/14