STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS(on) max Pw ID 3 STF10N62K3 STFI10N62K3 STI10N62K3 (1) 8.4 A 620 V 30 W < 0.75 Ω STP10N62K3 1 1 TO-220FP 2 3 I²PAKFP TAB TAB 8.4 A 2 125 W 1. Limited by package ■ 3 3 12 100% avalanche tested I²PAK ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Improved diode reverse recovery characteristics ■ Zener-protected Figure 1. TO-220 1 2 Internal schematic diagram '7$% Applications ■ Switching applications * Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary 6 AM01476v1 Order codes Marking Package STF10N62K3 10N62K3 TO-220FP STFI10N62K3 10N62K3 I²PAKFP STI10N62K3 10N62K3 I²PAK STP10N62K3 10N62K3 TO-220 Packaging Tube September 2012 This is information on a product in full production. Doc ID 15640 Rev 4 1/17 www.st.com 17 Contents STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 15640 Rev 4 STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter VDS Drain source voltage VGS Gate-source voltage I²PAK TO-220FP I²PAKFP Unit TO-220 620 V ± 30 V 8.4 (1) 8.4 A Drain current (continuous) at TC = 100 °C 5.2 (1) 5.2 A IDM (2) Drain current (pulsed) 33.6 (1) 33.6 A PTOT Total dissipation at TC = 25 °C 30 125 W ID Drain current (continuous) at TC = 25 °C ID IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) EAS 8 A Single pulse avalanche energy (3) 220 mJ Peak diode recovery voltage slope 12 V/ns ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 2.5 kV VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tj Tstg Operating junction temperature Storage temperature dv/dt (4) 2500 V -55 to 150 °C 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. Starting Tj = 25 °C, ID = IAR, VDD = 50 V 4. ISD ≤ 8.4 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤V(BR)DSS Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Doc ID 15640 Rev 4 I²PAK TO-220FP I²PAKFP TO-220 4.17 1.00 62.5 Unit °C/W °C/W 3/17 Electrical characteristics 2 STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 620 V IDSS Zero gate voltage VDS = 620 V drain current (VGS = 0) VDS = 620 V, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 3.75 4.5 V 0.68 0.75 Ω Min. Typ. Max. Unit VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on resistance Table 5. Symbol 3 VGS = 10 V, ID = 4 A Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS = 15 V, ID = 4 A - 6 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1250 138 16 - pF pF pF Co(tr)(2) Equivalent capacitance time related VDS = 0 to 496 V, VGS = 0 - 56 - pF Co(er)(3) Equivalent capacitance energy related VDS = 0 to 496 V, VGS = 0 - 38 - pF RG Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain - 3.5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 496 V, ID = 8 A, VGS = 10 V (see Figure 18) - 42 7.4 23 - nC nC nC 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/17 Doc ID 15640 Rev 4 STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 310 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 14.5 15 41 31 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 8.4 33.6 A A ISD = 8 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100A/µs VDD = 60 V (see Figure 22) - 320 2 13 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 410 2.9 14 ns µC A Min. Typ. 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol Gate-source Zener diode Parameter Test conditions V(BR)GSO Gate-source breakdown voltage (ID = 0) Igs= ± 1 mA 30 Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 15640 Rev 4 5/17 Electrical characteristics STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP, I²PAKFP Figure 3. Thermal impedance for TO-220FP, I²PAKFP Figure 5. Thermal impedance for I²PAK, TO220 Figure 7. Transfer characteristics AM03910v1 ID (A) 10 is ea ) ar S(on th RD in ax n io y m t b ra pe ed O mit i L 10µs is 1 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for I²PAK, TO220 AM03909v1 ID (A) ) on 10µs 100µs S( Op Lim era ite tion d by in th m is ax ar RD ea is 10 1 1ms Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 Figure 6. 10 1 100 VDS(V) Output characteristics ID (A) AM03911v1 VGS=10V 18 16 AM03912v1 ID (A) 12 7V 10 14 12 8 VDS = 15 V 10 6V 8 6 6 4 4 2 2 0 0 6/17 5V 10 20 VDS(V) Doc ID 15640 Rev 4 0 1 2 3 4 5 6 7 8 9 VGS(V) STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Figure 8. Normalized BVDSS vs temperature AM03913v1 BVDSS (norm) Electrical characteristics Figure 9. Static drain-source on-resistance RDS(on) (Ω) 0.078 AM03914v1 VGS=10V 1.10 0.076 ID = 1 mA 1.05 0.074 0.072 1.00 0.070 0.95 0.068 0.066 0.90 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 10. Output capacitance stored energy AM03917v1 Ecoss (µJ) 7 0 1 2 3 4 5 6 7 8 ID(A) Figure 11. Capacitance variations AM03916v1 C (pF) 6 Ciss 1000 5 4 3 100 2 Coss 1 0 0 100 200 300 400 500 600 10 0.1 VDS(V) 1 10 100 Crss VDS(V) Figure 12. Gate charge vs gate-source voltage Figure 13. Normalized on-resistance vs temperature AM03915v1 VDS VGS (V) (V) VDD=496V 12 AM03919v1 RDS(on) (norm) 500 ID=8A VDS 10 400 2.0 VGS = 10 V ID = 4 A 8 300 1.5 200 1.0 100 0.5 6 4 2 0 0 10 20 30 40 0 Qg(nC) 0.0 Doc ID 15640 Rev 4 -50 -25 0 25 50 75 100 125 150 TJ(°C) 7/17 Electrical characteristics STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Figure 14. Normalized gate threshold voltage vs temperature AM03918v1 VGS(th) (norm) 1.10 Figure 15. Maximum avalanche energy vs temperature ID = 100 µA 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 150 TJ(°C) 180 160 140 120 100 80 60 40 20 0 0 Figure 16. Source-drain diode forward characteristics AM03920v1 TJ=-50°C 0.9 0.8 TJ=25°C 0.7 0.6 TJ=150°C 0.5 0.4 0.3 0 8/17 10 20 30 40 50 60 ID=8 A VDD=50 V 220 200 1.00 VSD (V) AM03921v1 EAS (mJ) 70 80 ISD(A) Doc ID 15640 Rev 4 20 40 60 80 100 120 140 TJ(°C) STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15640 Rev 4 10% AM01473v1 9/17 Package mechanical data 4 STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/17 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 15640 Rev 4 STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Package mechanical data Figure 23. TO-220FP drawing 7012510_Rev_K_B Doc ID 15640 Rev 4 11/17 Package mechanical data Table 10. STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 24. I2PAKFP (TO-281) drawing REV! 12/17 Doc ID 15640 Rev 4 STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Table 11. Package mechanical data I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 25. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 15640 Rev 4 13/17 Package mechanical data Table 12. STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/17 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15640 Rev 4 STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Package mechanical data Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15640 Rev 4 15/17 Revision history 5 STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Revision history Table 13. 16/17 Document revision history Date Revision Changes 08-Jun-2009 1 First release. 22-Jun-2009 2 Added new package, mechanical data: I²PAK 06-Aug-2012 3 Added package, mechanical data: I²PAKFP Updated Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal data, Table 4: On /off states. Minor text changes. 13-Sep-2012 4 Changed value in the title from 3.8 A to 8.4 A. 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