GHz20060 60 Watts PEP, 26 Volts, Class AB 1800 - 2000 MHz Updated Feb 2001 GENERAL DESCRIPTION CASE OUTLINE The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is specifically designed for LINEAR COMMUNICATIONS BASE STATION amplifier applications. It includes single stage input and single output prematching. It utilizes Gold metalization and EMITTER ballasting to provide high reliability and supreme ruggedness. The GHz20060 is in the industry standard Beryllium Oxide (BeO) package design to drop into existing applications. 55SW, STYLE 2 COMMON EMITTER ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current Bvceo Collector to Emitter Voltage BVces Collector to Emitter Voltage BVcbo Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 250 Watts 25 Volts 60 Volts 60 Volts 3 Volts 8.0 Amps - 65 to + 150oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Gpe Common Emitter Power Gain Return Loss Collector Efficiency Load Mismatch Tolerance Intermodulation Distortion Rl ηc VSWR1 IMD BVceo BVces BVcbo BVebo Ices hFE θjc Collector to Emitter Breakdown Collector to Emitter Breakdown Collector to Base Breakdown Reverse Emitter to Base Breakdown Collector Leakage Current DC - Current Gain Thermal Resistance TEST CONDITIONS F =2000 MHz Vce = 26 Volts Icq = 300 mAmps 60 Watts PEP MIN TYP 9.0 9.5 35 40 MAX UNITS dB dB % -10 3:1 -30 As above, except F2=2000.1 MHz Ic = 50 mA, Ib = 0 mA Ic = 50 mA, Vbe = 0 Ic = 50 mA, Ie = 0 mA Ib = 10 mA, Ic = 0 mA 25 60 60 3.0 Vce = 30 Vdc, Vbe = 0 Vdc Vce = 5 V, Ic = 1.0 A Tc = 25oC 20 dBc Volts Volts Volts Volts 10 100 .87 mA o C/W Issue A, January 2000 GHz TECHNOLOGY, INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. Gain 60 10.5 Efficiency 40 9.5 Vcc = 26 V Icq = 300 m A f = 1960 M Hz NADC source 20 Pout 0 0 1 8.5 Gain (dB) Pout (Watts, ave), Efficiency (%) Perform ance versus Input Pow er 7.5 3 4 6 8 Input Pow er (W atts, average) Adjacent Channel Pow er Ratio -90 -60 -30 30 60 -20 ACP (dBc) -30 -40 -50 Pout=37 W att ave, N AD C source Vcc = 26 Volts Icq = 300 m A -60 -70 Frequency (M Hz) 1930 1960 1990 90 Perform ance Across Band 10.25 42% Gain (dB) 9.75 9.25 8.75 8.25 1930 41% Efficiency 39% Pout=37 W att ave, N AD C source Vcc = 26 Volts Icq = 300 m A 1960 Frequency (M Hz) 38% 36% 1990 Collector Efficiency Gain