SLUS480B – MAY 2001
D Multifunction Monitoring IC Designed to
D
D
D
D
D
D
D 32 Bytes of General-Purpose RAM, 224
Work With an Intelligent Host Controller:
– Provides Accurate State of Charge
Information for Rechargeable Batteries
– Enhances Power and Charge
Management in the System
Supply Operation Down to 2.4 V; Ideal for
Single-Cell Li-Ion or Li-Pol Applications
Communicates Over Single-Wire SDQ
Serial Interface
Resolves Signals Down to 3.05 µVh
High-Accuracy Coulometric Charge and
Discharge Current Integration
Differential Current Sense Input
Automatic and Continuous Offset
Calibration and Compensation
D
D
D
D
D
Bytes of FLASH, and 8 Bytes of Secure ID
ROM
Internal Temperature Sensor With 0.25°K
Resolution Eliminates the Need for an
External Thermistor
Programmable Digital Output Port
Battery-Pack Removal Detection Input
Places the IC in the Sleep Mode When
System Is Not Present
High-Accuracy Internal Timebase
Eliminates External Crystal Oscillator
Low Power Consumption:
– Operating: 40 µA
– Sleep: 1.5 µA
PW PACKAGE
(TOP VIEW)
description
The bq2023 is an advanced battery monitoring IC
that accurately measures the charge and discharge currents in rechargeable battery packs.
Intended for pack integration, the bq2023
contains all the necessary functions to form the
basis for an accurate battery gas gauge in cellular
phones, PDAs, or other portable products.
RBI
VCC
VSS
SDQ
1
2
3
4
8
7
6
5
STAT
SRP
SRN
PDET
Gas gauging is accomplished by coulomb counting (i.e., measuring the charge input to and subsequently
removed from the battery). The bq2023 achieves that by measuring the differential voltage drop across a
low-value series sense resistor between the negative terminal of the battery and the battery-pack negative
contact. An internal voltage-to-frequency converter (VFC) converts this voltage into charge and discharge
counts. The VFC is capable of resolving signals down to 3.05 µV. By using the accumulated counts in the
charge, discharge, and self-discharge registers, an intelligent host controller can determine battery
state-of-charge information. To improve accuracy, the bq2023 continuously measures and compensates offset
errors in the VFC.
The bq2023 works with the host controller in the portable system to implement the battery management system.
The host controller interprets the bq2023 data and communicates meaningful battery data to the end-user or
power-management system. The SDQ single-wire bus architecture allows multiple bq2023s to exist on the
same communications node simultaneously.
The bq2023 provides 224 bytes of flash memory, 8-bytes of secure ID ROM, and 32 bytes of RAM. The
nonvolatile memory maintains formatted battery monitor information, identification codes, warranty information,
or other critical battery parameters while the battery is temporarily shorted or deeply discharged.
AVAILABLE OPTIONS
PACKAGED DEVICE
TA
–20°C to 70°C
8-LEAD TSSOP
(PW)
bq2023PW
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
SDQ is a trademark of Texas Instruments.
Copyright 2001, Texas Instruments Incorporated
!"# $ %& '# "$ (&)%"# *"#'+
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$#"*" * ." "#/+ *&%# ( %'$$0 *'$ # '%'$$" )/ %)&*'
#'$#0 ")) (" "!'#' $+
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1
SLUS480B – MAY 2001
functional block diagram
SDQ
STAT
Serial
Interface with
CRC
Generation
Temp
Sense
ADC
PDET
Controller
ID ROM
SRP
VFC
SRN
VCC
32 X 8 RAM
BIAS
7 – 32 X 8
Pages of Flash
VSS
POR
CIRCUIT
RBI
Terminal Functions
TERMINAL
NAME
NO.
I/O
DESCRIPTION
PDET
5
I
RBI
1
I/O
Register backup input when VCC < V(POR), VCC output when VCC > V(POR)
SDQ
4
I/O
Single-wire data input/output port
SRN
6
I
Current sense input 2
SRP
7
I
Current sense input 1
STAT
8
O
Open-drain status output
VCC
VSS
2
I
Supply voltage
2
3
Pack removal detection input
Ground
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Charge/
Discharge,
CountersTimers,
and Temperature
Registers
SLUS480B – MAY 2001
detailed description
register backup
The RBI input pin is used with a storage capacitor or external supply to provide backup potential to the internal
RAM and registers while VCC is below the minimum operating voltage.
single-wire data input/output port
SDQ is a single-wire serial communications interface port. This bidirectional input/output communicates the
information to the host system. SDQ is compatible with Dallas Semiconductor’s 1-wiret interface.
pack removal detection
A low-level PDET input places the bq2023 in sleep mode and turns off the open-drain output of the STAT pin.
current sense inputs
The bq2023 interprets charge and discharge activity by monitoring and integrating the voltage drop, V(SR),
across pins SRP and SRN. The SRP input connects to the sense resistor and the negative terminal of the
battery. The SRN input connects to the sense resistor and the negative terminal of the pack. V(SRP) < V(SRN)
indicates discharge, and V(SRP) > V(SRN) indicates charge.
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Supply voltage (VCC with respect to GND) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Input voltage, VI (SRP, SRN, PDET, RBI all with respect to GND) . . . . . . . . . . . . . . . . . . –0.3 V to VCC + 0.3 V
Pullup voltage VPU(SDQ and STAT pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Output current, IO (STAT pin) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 mA
Output current, IO(SDQ pin) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 mA
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature (soldering, 10 s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
recommended operating conditions
MIN
NOM
MAX
Operation range with flash write or erase capability, VCC
2.8
5.0
Operation range without flash write or erase capability, VCC
2.4
5.0
Pullup voltage on SDQ and STAT pins, V(PU)
2.4
UNIT
V
6.0
Supply current, ICC(OP), See Note 1
35
60
Supply current, ICC(OP), See Note 2
32
40
Sleep current, I(SLEEP), See Note 3
1.0
1.5
µA
Register back-up current, I(RBI), See Note 4
µA
A
20
nA
Operating ambient temperature, TA
–20
70
°C
Power-on reset voltage, V(POR)
2.0
2.34
V
NOTES: 1.
2.
3.
4.
VCC = 5 V, flash write or erase not active
VCC = 4.2 V, flash write or erase not active
VCC = 4.2 V, flash write or erase not active, excludes SDR register maintenance
RBI pin only, VCC < V(POR)
1-wire is a trademark of Dallas Semiconductor.
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SLUS480B – MAY 2001
electrical characteristics over recommended operating free-air temperature range and supply
voltage (unless otherwise noted)
dc
PARAMETER
TEST CONDITIONS
VOL
IOL
Digital output low SDQ and STAT pin
VIL
VIH
Digital input low SDQ pin
VIH(PDETH)
RSR
Digital input high PDET pin
MIN
TYP
MAX
IOL = 1 mA
UNIT
0.4
Digital output low sink current on SDQ pin
V
1
mA
0.7
Digital input high SDQ pin
V
1.7
SR input impedance
0.1 V < (VSRP,VSRN) < VCC
V
VCC–0.1
10
VCC+0.3
V
MΩ
ac
PARAMETER
td(POR)
td(PDET)
TEST CONDITIONS
MIN
Power on reset delay
Delay required to attempt communication after VCC > 2.4 V
PDET delay
Sleep delay time after PDET transitions from high to low
(and all sleep conditions have been met)
TYP
MAX
UNIT
500
ms
1
ms
300
µs
td(SDQ)
SDQ wake-up delay
Wakeup delay after SDQ activity detected (see Note 5)
NOTE 5: Assured by design. Not production tested.
timer characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
E(TMR)
TEST CONDITIONS
Timer accuracy error
MIN
TYP
MAX
–4%
UNIT
4%
characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
T(RES)
Reported temperature resolution
E(T)
Reported temperature accuracy
MIN
TYP
MAX
–4
UNIT
°K
0.25
4
°K
VFC characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
VI(SR)
Input voltage: VSRP–VSRN
G(VFC)
Charge/discharge gain
TA = 22°C, VCC = 3.6 V, See Note 6
G(VCC)
Supply voltage gain
coefficient
TA = 22°C, See Note 6
Slope for TA = –20°C to 70°C, See Note 6
G(TCO)
Tem erature gain
Temperature
coefficient
MIN
91.1
V(COS)
Integral nonlinearity
Auto compensated offset
Total deviation for TA = –20°C to 70°C, See Note 6
Slope for TA = 0°C to 50°C, See Note 6
UNIT
100
mV
94.1
97.1
Hz/V
–0.54
–1.25
%/V
0.06
%/°C
–1.5%
–2.2%
–0.58%
–1.2%
0.04%
0.2%
–0.04
0.05
%/°C
See Note 6
–0.1%
See Note 6
–15.8
11.4
µV
0°C < TA < 50°C, 2.4 V < VCC < 4.2 V, See Note 6
–12.1
7.2
µV
NOTE 6: –100 mV < (V(SRP) – V(SRN)) < 100 mV
4
MAX
–0.05
Total deviation for TA = 0°C to 50°C, See Note 6
INL
TYP
–100
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SLUS480B – MAY 2001
flash memory characteristics over recommended operating temperature and supply voltage
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
Data retention
See Note 7
Flash programming write-cycles
See Note 7
t(BYTERPROG)
Byte programming time
See Note 7
t(BLKERASE)
Block-erase time
60 µs +30 µs/byte, See Note 7
ICC(PROG)
Flash-write supply current
ICC(ERASE)
Flash-erase supply current
NOTE 7: Assured by design. Not production tested.
TYP
MAX
UNIT
5
Years
10,000
Cycles
200
µs
1,500
µs
VCC = 5, See Note 7
30
mA
VCC = 5, See Note 7
30
mA
SDQ communication timing specification over recommended operating temperature and pull-up
voltage (unless otherwise noted) (See Figures 2 through 6)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
t(SLOT)
t(LOW1)
Bit cycle time (See Figure 1)
t(LOW0)
t(REC)
Write bit zero time (See Figure 2)
Recovery time (See Figure 2)
t(LOW0) must be less than t(SLOT), See Note 8
See Note 8
t(LOWR)
t(RDV)
Read bit strobe time (See Figure 3)
See Note 8
1
15
µs
Read data valid time (See Figure 3)
See Note 8
tLOWR
15
µs
Read data release time (See Figure
4)
See Note 8
30
µs
t(REL)
See Note 8
Write bit one time (See Figure 1)
60
120
1
15
60
120
UNIT
µss
µs
µs
1
t(RSTL)
t(RSTH)
Reset time low (See Figure 5)
Reset time high (See Figure 5)
t(RSTL) + t(R) < 960 µs, See Note 8
See Note 8
480
µs
300
µs
t(PDH)
t(PDL)
Presence pulse delay (See Figure 5)
See Note 8
15
60
µs
Presence pulse delay (See Figure 5)
See Note 8
60
240
µs
NOTE 8: 5-kΩ pullup on SDQ pin
timing requirements
t(REC)
V(PU)
VIHmin
VILmax
t(LOW1)
t(SLOT)
Figure 1. SDQ Write Bit-ONE Timing Diagram
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5
SLUS480B – MAY 2001
timing requirements (continued)
t(REC)
V(PU)
VIHmin
VILmax
t(LOW0)
t(SLOT)
Figure 2. SDQ Write Bit-ZERO Timing Diagram
15 µS
t(REC)
V(PU)
VIHmin
VILmax
t(LOWR)
t(RDV)
t(SLOT)
Figure 3. SDQ Read Bit-One Timing Diagram
15 µS
t(REC)
VPU
VIHmin
VILmax
t(LOWR)
t(REL)
t(RDV)
t(SLOT)
Figure 4. SDQ Read Bit-Zero Timing Diagram
t(RSTH)
V(PU)
VIHmin
VILmax
t(R)
t(RSTL)
t(PDL)
t(PDH)
Figure 5. SDQ RESET Timing Diagram
6
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SLUS480B – MAY 2001
TYPICAL CHARACTERISTICS
VFC GAIN RESPONSE
vs
FREE-AIR TEMPERATURE
96.0
95.5
VCC = 2.4 V
VFC Gain – Hz / V
95.0
94.5
VCC = 3.6 V
94.0
93.5
VCC = 4.2 V
93.0
92.5
92.0
–20
–10
0
10
20
30
40
50
60
70
TA – Free-Air Temperature – °C
Figure 6
APPLICATION INFORMATION
VCC
U1
C4
0.1 µF
STAT
1
2
BAT+
R5
100 Ω
R6
100 Ω
DATA
D2
5.6 V
C3
0.1 µF
3
4
RBI
STAT
VCC
SRP
VSS
SRN
SDQ
PDET
8
R2
100 kΩ
7
BAT–
C1
0.1 µF
6
R1
0.02 Ω
5
bq2023PW
R4
50 kΩ
PACK–
C2
0.1 µF
R3
100 kΩ
PDET
Figure 7. Typical Application Diagram for Single-Cell Li-Ion or Li–Pol Pack
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SLUS480B – MAY 2001
APPLICATION INFORMATION
functional description
The bq2023 measures the differential voltage drop across a low-value series sense resistor between the
negative terminal of the battery and the battery-pack ground contact. An internal VFC (voltage-to-frequency
converter) converts this voltage into charge and discharge counts. The VFC is capable of resolving signals down
to 3.05 µV. By using the accumulated counts in the charge, discharge, and self-discharge registers, an
intelligent host controller can determine battery state-of-charge information. To improve accuracy, the bq2023
automatically self-calibrates every hour and continuously compensates offset errors in the VFC every hour.
Access to the registers and control of the bq2023 is accomplished through a single-wire interface command
protocol which includes placing the device in the low-power mode, hardware register reset, and flash
programming.
charge and discharge count operation
Table 1 shows the main counters and registers of the bq2023. The bq2023 accumulates charge and discharge
counts into two count registers, the discharge count register (DCR) and the charge count register (CCR). The
DCR or CCR independently counts depending on the signal between pins SRP and SRN.
During discharge, the DCR and the discharge time counter (DTC) are active. If (VSRP–VSRN) is less than zero,
indicating a discharge, the DCR counts at a rate equivalent to one count per 3.05 µV-hr, and the DTC counts
at 1.1378 counts per second (4096 counts = 1 hour). For example, if it is assumed that no rollover of the DTC
register is incipient, a negative 24.42 mV signal between pins SRP and SRN produces 8000 DCR counts and
4096 DTC counts each hour.
During charge, the CCR and the charge time counter (CTC) are active. If (VSRP–VSRN) is greater than zero,
indicating a charge, the CCR counts at a rate equivalent to one count per 3.05 µV-hr, and the CTC counts at
1.1378 counts per seconds. In this case a +24.42mV signal produces 8000 CCR counts and 4096 CTC counts
(assuming no rollover) each hour.
The DTC and the CTC are 16-bit registers, which roll over at FFFF hex. If a rollover occurs, the corresponding
bit in the mode register is set, and the counter increments at 1/256 of the normal rate (16 counts per hour).
For self-discharge calculation, the self-discharge count register (SCR) counts at a rate equivalent to 1 count
every hour at a nominal 25°C and doubles approximately every 10°C up to 60°C. The SCR count rate is halved
every 10°C below 25°C down to 0°C. The value in SCR is useful in determining an estimation of the battery
self-discharge based on capacity and storage temperature conditions.
Table 1. bq2023 Counters
NAME
8
DESCRIPTION
RANGE
RAM SIZE
16-bit
Charge count register
V(SR) < VSS (Maximum = –100 mV) 3.05 µVh/LSB
V(SR) >VSS (Maximum = 100 mV) 3.05 µVh/LSB
Self-discharge count register
1 count/hour at 25°C
16-bit
DTC
Discharge time counter
1 count/0.8789s if STD is clear
1 count/225s if STD is set
16-bit
CTC
Charge time counter
1 count/0.8789s if STC is clear
1 count/225s if STC is set
16-bit
DCR
Discharge count register
CCR
SCR
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16-bit
SLUS480B – MAY 2001
APPLICATION INFORMATION
functional description (continued)
low-power sleep mode
In order to minimize power consumption, the bq2023 offers a low-power sleep mode. Table 2 shows the active
registers during normal and sleep modes.
Table 2. Operational States
MODE
Normal
Sleep
ACTIVE REGISTERS
CCE, DCR, CTC, DTC, SDR, TEMPH, TEMPL
SDR, TEMPH, TEMPL
There are two methods for entering the sleep mode.
sleep mode as a result of charge/discharge inactivity
The bq2023 enters sleep mode if battery current (i.e., voltage difference between the SRP and SRN pins) is
less than the WOE threshold, and the SLEN bit (in the MODE/WOE register) is set, and there is no
communication activity on the SDQ pin for approximately one hour. The bq2023 wakes on either a low to high
or high to low transition on the SDQ pin. The SLEN bit is set during power-on-reset. Table 2 shows the available
WOE thresholds.
Table 3. WOE Thresholds
WOE3–1
(HEX)
VWOE
(µV)
0h
N/A
1h
21.35
2h
18.30
3h
15.25
4h
12.20
5h
9.15
6h
7h†
6.10
3.05
† Default
sleep mode as a result of change PDET input
PDET input can also place the bq2023 in sleep mode. The bq2023 enters sleep mode in response to PDET input
going low. This happens regardless of the state of the SLEN bit (in the MODE/WOE register). In order to wake
up the bq2023, several conditions need to be considered:
D A low-to-high transition on PDET will wake the device, if
–
SLEN = 0, or
–
SLEN = 1 and the device was awake when PDET was pulled low.
–
To ensure proper wake-up sequence it is recommended that the host initiate either a low to high or high
to low transition on the SDQ pin.
D A low-to-high transition will not wake the device if
–
SLEN = 1 and the device was asleep when PDET was pulled low.
Note that PDET signal should be tied to the VCC during a POR condition.
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SLUS480B – MAY 2001
APPLICATION INFORMATION
functional description (continued)
current sense offset
The bq2023 automatically self-calibrates and compensates for current offset. The self-calibration is performed
once every hour.
gas gauge control registers
The host maintains the charge/discharge and self-discharge count registers (CCR, CTC, DCR, DTC, and SCR).
To facilitate this, the bq2023 provides the CLR register to clear an individual counter or register pair. The host
system clears a register by writing the corresponding register bit to 1. When the bq2023 completes the clear
action, the corresponding bit in the CLR register is automatically reset to 0. Clearing the DTC or CTC registers
also clears the corresponding STC or STD bit in the MODE register.
device temperature measurement
The bq2023 reports die temperature in units of °K through register pair TEMPH-TEMPL. See the TMP register
description for more details.
register interface
Information exchange between the host system and the bq2023 is through the data register interface. See
Table 4. The register set consists of a 271-location address space of 8-bit bytes segmented into:
Table 4. bq2023 Memory Map
ADDRESS
NAME
0x010F
DCRH
BIT 7
BIT 6
BIT 5
Discharge-count register high byte
BIT 4
BIT 2
0x010E
DCRL
Discharge-count register low byte
0x010D
CCRH
Charge-count register high byte
0x010C
CCRL
Charge-count register low byte
0x010B
SCRH
Self-discharge count register high byte
0x010A
SCRL
Self-discharge count register low byte
0x0109
DTCH
Discharge-timer–counter register high byte
0x0108
DTCL
Discharge-timer-counter register low byte
0x0107
CTCH
Charge-timer-counter register high byte
BIT 1
BIT 0
0x0106
CTCL
0x0105
MODE/WOE
RSVD
SLEN
STC
Charge-timer-counter register low byte
STD
WOE2
WOE1
WOE0
RSVD
0x0104
CLR
RSVD
POR
STAT
CTC
DTC
SCR
CCR
DCR
0x0103
TEMPH
Temperature high byte
0x0102
TEMPL
Temperature low byte
0x0101
FED
PAGE2
PAGE1
PAGE0
RSVD
PAGE6
PAGE5
PAGE4
0x0100
10
BIT 3
PAGE3
Reserved
0x00E0-0x00FF
RAM
Page 7, 32 bytes of RAM
0x00C0-0x00DF
Flash
Page 6, 32 bytes of flash
0x00A0-0x00BF
Flash
Page 5, 32 bytes of flash
0x0080-0x009F
Flash
Page 4, 32 bytes of flash
0x0060-0x007F
Flash
Page 3, 32 bytes of flash
0x0040-0x005F
Flash
Page 2, 32 bytes of flash
0x0020-0x003F
Flash
Page 1, 32 bytes of flash
0x0000-0x001F
Flash
Page 0, 32 bytes of flash
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APPLICATION INFORMATION
functional description (continued)
memory
ID ROM
The bq2023 has 64 bits of ID ROM as shown in Table 5. Forty-eight bits of this data field and the family code
can be factory programmed with a unique and secure product serialization. Contact Texas Instruments for
details.
Table 5. 64-Bit ID ROM
8-BIT CRC CODE
MSB
LSB
48-BIT SERIAL NUMBER
MSB
LSB
8-BIT FAMILY CODE
MSB
LSB
flash
Table 6 shows the memory map of the 224 x 8-bit flash section of the bq2023. The flash memory is configured
into seven 32-byte pages. To modify the flash, data are first written to the communication buffer with the write
data-memory command and then verified by reading an 8-bit CRC (cyclic redundancy check) from the bq2023
that confirms proper receipt of the data. These are then programmed into flash by issuing the programming
verification code. For further details on reading and programming the flash, refer to the memory function
commands section of this data sheet.
Table 6. 224 Bytes Flash Data Memory Map
ADDRESS (HEX)
PAGE
00C0–00DF
Page 6
00A0–00BF
Page 5
0080–009F
Page 4
0060–007F
Page 3
0040–005F
Page 2
0020–003F
Page 1
0000–001F
Page 0
pack removal detection
The PDET input pin can detect removal of the battery pack from the device it is powering. Also, it can ensure
that external devices driven by the STAT output are not active after a battery pack is removed. When the PDET
input is low, the bq2023 immediately enters sleep mode and turns off the open-drain output of the STAT pin.
SDQ serial communication
The host reads memory or registers, and programs the bq2023 through a hierarchical command structure.
Figure 8 illustrates this command structure and shows that ROM function commands select the bq2023 before
the registers or memory can be read or modified. A successful completion of the command selects or activates
the bq2023, allowing it to respond to further commands. All bytes sent and received by the bq2023 are
transmitted least significant bit first.
To validate the data transmitted from the bq2023, the host may generate a CRC value from the data as they
are received. This generated value is compared to the CRC value transmitted by the bq2023. If the two CRC
values match, the transmission is error-free. The equivalent polynomial function of this CRC is X8 + X5 + X4 +
1. For more details, see the CRC generation section of this data sheet.
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SLUS480B – MAY 2001
APPLICATION INFORMATION
initialization and selected states
initialization
After the SDQ pin has been driven low for at least 480 µs and then is driven high, the bq2023 will issue a
presence pulse. After the presence pulse is sent, the bq2023 is initialized.
selected
After successful completion of a ROM function command, the bq2023 is in the selected state.
ROM function commands
Figure 8 illustrates the four ROM function commands. On the successful completion of a ROM function
command, the bq2023 will respond to a memory/status function command.
read ROM
When the bq2023 is initialized, the read ROM command, 33 hex, directs the bq2023 to transmit the contents
of the 64 bit ID ROM in order, starting with the least significant bit 0. After the bq2023 transmits the 64th bit, the
bq2023 is in the selected state.
match ROM
When the bq2023 is initialized, the match ROM command, 55 hex, directs the bq2023 to compare the next 64
bits received to its own ID ROM contents. If each of the received bits matches, then the bq2023 is selected.
search ROM
When the bq2023 is initialized, the search ROM command, F0 hex, directs the bq2023 to transmit each bit of
the ID ROM twice but in a different form each time, and then to receive a bit. First the true value of the bit is
transmitted; then the complement of the bit is transmitted. Then, the bq2023 receives a bit. This received bit
is compared to the true bit. This process is repeated and the bq2023 compares all bits received to the contents
of the ID ROM. If the received bits match the contents of the ID ROM the bq2023 is selected.
skip ROM
When the bq2023 is initialized, the SKIP ROM command, CC hex, directs the bq2023 to be selected.
memory function commands
Six memory function commands allow reading of all registers, flash, and RAM, and allow modification of flash
and RAM locations. There are two types of read-memory command, the write data memory, the program profile
byte command, and the flash erase command. The bq2023 responds to the memory function commands only
after it is selected by a ROM function command.
read memory-page CRC
The read memory/page CRC command reads part or all of the 271 memory addresses shown in the register
map with 8-bit CRCs generated at 32-byte page boundaries.
The flowchart in Figure 9 illustrates that when the bq2023 is in the selected state, the read memory/page CRC
command, C3 hex, directs the bq2023 to load the next two bytes (low byte and high byte of the starting address)
into the address counter. Individual bytes of address and data are transmitted least significant bit first. An 8-bit
CRC of the command byte and address bytes is computed and transmitted by the bq2023. When the bq2023
detects a start frame for read time slots it transmits data from the 271 bytes of data memory field as pointed to
by the address counter. After each byte of data is transmitted, the address counter is incremented. If the end
of a page is reached, the bq2023 calculates and transmits an 8-bit CRC that is the result of shifting into the CRC
generator all of the data bytes from the initial starting byte to the last byte of the current page. Once the 8-bit
CRC has been transmitted, data are transmitted from memory as pointed to by the address counter, which at
this point is the start of the next page. This sequence will continue until the final page and its accompanying CRC
are transmitted. The read memory/page CRC command sequence can be terminated at any point by issuing
a reset pulse.
12
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APPLICATION INFORMATION
From Reset Pulse
bq2023 Transmits Presence Pulse
ROM
Command
Issued?
No
Yes
Read
ROM
Command?
(33H)
No
Yes
bq2023 Transmits
64 Bit ID ROM
Starting With Bit 0
Match
ROM
Command?
(55H)
Yes
No
Yes
Skip
ROM
Command?
(CCH)
No
Search
ROM
Command?
(F0H)
Yes
No
Reset
Pulse
Received?
No
Yes
n=0
n=0
bq2023 Receives Bit n
bq2023 Transmits Bit n,
Transmits the
Complement of Bit n,
Then Receives Bit n
No
Received
Bit n =
ID ROM Bit n?
Received
Bit n =
ID ROM Bit n?
No
Yes
Yes
n = 63?
n = 63?
Selected
State
No
n=n+1
No
n=n+1
Yes
Yes
Figure 8. ROM Command Flow Chart
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SLUS480B – MAY 2001
APPLICATION INFORMATION
Read Memory
Page CRC Command?
(C3H)
Selected
State
No
Selected
State
Yes
bq2023 Receives Low Byte
Address (LSB First) AD7 – AD0
bq2023 Receives High Byte
Address (LSB First) AD15 – AD8
bq2023 Loads Address
Into Address Counter
bq2023 Calculates and
Transmits CRC of Write
Command and Address
bq2023 Transmits 1 Byte of
Data From Data Memory
Pointed to by Address Counter
bq2023 Increments Address Counter
No
End of Data
Memory 32-Byte
Page?
Yes
bq2023 Calculates and
Transmits CRC Byte of
Preceding Page of Data
No
End of Data
Memory?
Yes
Wait for
Reset
Pulse
Figure 9. Read Memory and Generate PAGE CRC Command Flow
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APPLICATION INFORMATION
read memory/field CRC
The read memory/field CRC command reads part or all of the 271 memory addresses shown in the register map
with an 8-bit CRC generated at the end of the 271-byte register map.
The flowchart in figure 10 illustrates when the bq2023 is in the selected state. The read memory/field CRC
command, F0 hex, directs the bq2023 to load the next two bytes, low byte and high byte of the starting address,
into the address counter. Individual bytes of address and data are transmitted least significant bit first. An 8-bit
CRC of the command byte and address bytes is computed and transmitted by the bq2023. When the bq2023
detects a start frame for read time slots, it transmits data from the 271 available registers bytes as pointed to
by the address counter. After each byte of data is transmitted, the address counter is incremented. This process
repeats until the end of the register map is reached. At the end of the data field, the bq2023 calculates and
transmits another 8-bit CRC of all data bytes read from the initial starting byte through the last byte of memory.
The read memory/field CRC command sequence can be terminated at any point by issuing a reset pulse.
write data memory
The write data memory command programs the 224 bytes of flash and modifies RAM registers that can be
written. Data are first written into a communication buffer. When programming flash, the contents of the
communication buffer are ANDed with the contents of the flash memory field when the programming code is
issued. Before programming, data in flash will appear as 1s. When writing to non-flash registers, the bq2023
copies data from the communication buffer into the byte to be modified.
The flowchart in Figure 11 illustrates that when the bq2023 is in the selected state, the write data memory
command, 0F hex, directs the bq2023 to load the next two bytes (low byte and high byte of the starting address)
into the address counter. Eight bits of data are transmitted to the bq2023. Individual bytes of address and data
are transmitted least significant bit first. The bq2023 calculates and transmits an 8-bit CRC based on the write
data memory command, address, and data. The highest starting address of the bq2023 is 10F hex.
After verifying the CRC, the host issues the programming code, 5A hex. Then the communication buffer is
logically ANDed with the contents of the flash byte pointed to by the address register.
NOTE:
If the address is greater than DF or not equal to 101 hex, no programming code is required, because
the write is to a RAM register.
The data are then transmitted back to the host from flash to verify that the byte was correctly programmed or
written. If the address is less than 10F hex and is a modifiable location, then the next byte of data may be
transmitted to the bq2023 from the host. The bq2023 calculates the 8-bit CRC by loading the least significant
byte of the address register and shifting in the new data. This CRC is then transmitted for verification.
The write data memory command sequence can be terminated at any point by issuing a reset pulse.
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SLUS480B – MAY 2001
APPLICATION INFORMATION
Read Memory
Command?
(F0H)
Selected
State
No
Yes
bq2023 Receives Low Byte
Address (LSB First) AD7 – AD0
bq2023 Receives High Byte
Address (LSB First) AD15 – AD8
bq2023 Loads Address
Into Address Counter
bq2023 Calculates and
Transmits CRC of Write
Command and Address
bq2023 Transmits 1 Byte of
Data From Data Memory
Pointed to by Address Counter
bq2023 Increments Address Counter
No
End of Data
Memory?
Yes
bq2023 Calculates and
Transmits CRC of Data
Wait for
Reset
Pulse
Figure 10. Read Data Memory With Field CRC Command Flow
16
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Selected
State
SLUS480B – MAY 2001
APPLICATION INFORMATION
No
Write Memory
Command?
(0FH)
Selected
State
Selected
State
Yes
Bus Master Transmits LS Byte
AD7 – AD0 (LSB First)
Bus Master Transmits MS Byte
AD15 – AD8 (LSB First)
Bus Master Transmits Data Byte D7 – D0
8-Bit CRC Generated of Command,
Address and Data
No
8-Bit CRC Generated by Loading
Lower Byte of Address and
Then Shifting in Data
CRC
Correct?
Yes
Bus Master Transmits Data Byte D7 – D0
For Addresses Less Than E0 or
Equal to 101 Hex, the Bus Master
Issues Program Code 5A Hex
For Flash (00 – DF and 101 Hex) RAM
Buffer Is Logically ANDed With the
Contents of the FLASH Memory
Pointed to by Address Index Register
Address Counter Increments
Least Significant Byte of Address
Counter Is Loaded Into CRC Generator
Program Data Re-transmitted
No
FLASH Byte =
Data Byte?
Yes
Wait for
Reset
Pulse
Yes
End of
Memory?
No
Figure 11. Write Memory Command Flow
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SLUS480B – MAY 2001
APPLICATION INFORMATION
program profile byte
The program profile byte provides the user a convenient method to differentiate the programming profile
required by the bq2023 from other similar products. The flowchart in Figure 12 illustrates that when the bq2023
is in the selected state, the program profile byte, 99 hex, directs the bq2023 to transmit the value 55 hex.
Program
Profile Command?
(99 Hex)
Selected
State
No
Selected
State
Yes
bq2023 Transmits 55 Hex
Wait for
Reset
Pulse
Figure 12. PROGRAM PROFILE Command Flow
flash erase command sequence
The flash erase command erases individual pages of flash. The flowchart in Figure 13 illustrates when a ROM
command has selected the bq2023, 40 hex directs the bq2023 into the erase page mode. The host then
transmits the 16-bit page erase codes found in Table 6 for the desired page to be erased.
Table 7. Page Erase Codes
FLASH PAGE
CODE (HEX)
0
0000
1
0020
2
0040
3
0060
4
0080
5
00A0
6
00C0
An 8-bit CRC of the command byte and page code is computed and transmitted by the bq2023. If the CRC is
correct, the host then transmits code 5A hex to begin the erase.
18
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APPLICATION INFORMATION
Flash Page
Erase Command?
(40 Hex)
Selected
State
No
Selected
State
Yes
Host Transmits 16-Bit Page Code
CRC Generated From Command
and Page Erase Code
No
CRC
Correct?
Yes
Host Transmits Code 5A hex
Selected Page Erased
Wait for
Reset
Pulse
Figure 13. FLASH Erase Command
bq2023 registers
physical address space
The highest address decoded by the bq2023 is 0x011f. Physical registers located between 0x0020 and 0x00ff
are repeated on 256-byte boundaries, starting at 0x0120. Any write to address 0x0120 and above can cause
a data overwrite to FLASH and/or RAM.
register maintenance
The host system is responsible for register maintenance. To facilitate this maintenance, the bq2023 has a clear
register (TMP/CLR) that resets the specific counter or register pair to zero. The host system clears a register
by writing the corresponding register bit to 1. When the bq2023 completes the reset, the corresponding bit in
the TMP/CLR register is automatically reset to 0, which saves the host an extra write/read cycle. Clearing the
DTC register clears the STD bit and sets the DTC count rate to the default value of 1 count per 0.8789 s. Clearing
the CTC register clears the STC bit and sets the CTC count rate to the default value of 1 count per 0.8789 s.
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SLUS480B – MAY 2001
APPLICATION INFORMATION
bq2023 registers (continued)
Table 8. bq2023 Register Map
ADDRESS
NAME
0x010F
DCRH
BIT 7
Discharge count register high byte
0x010E
DCRL
Discharge count register low byte
0x010D
CCRH
Charge count register high byte
0x010C
CCRL
Charge count register low byte
0x010B
SCRH
Self discharge count register high byte
0x010A
SCRL
Self-discharge count register low byte
0x0109
DTCH
Discharge timer counter register high byte
0x0108
DTCL
Discharge timer count register low byte
0x0107
CTCH
Charge timer counter register high byte
0x0106
CTCL
Charge timer counter register low byte
0x0105
MODE/WOE
RSVD
SLEN
STC
STD
WOE2
0x0104
CLR
RSVD
POR
STAT
CTC
DTC
0x0103
TEMPH
Temperature high byte
0x0102
TEMPL
Temperature low byte
0x0101
FED
RSVD
BIT 6
PAGE6
BIT 5
PAGE5
BIT 4
PAGE4
0x0100
BIT 3
PAGE3
BIT 2
BIT 1
BIT 0
WOE1
WOE0
RSVD
SCR
CCR
DCR
PAGE2
PAGE1
PAGE0
Reserved
0x00E0-0x00FF
RAM
Page 7, 32 bytes of RAM
0x00C0-0x00DF
Flash
Page 6, 32 bytes of flash
0x00A0-0x00BF
Flash
Page 5, 32 bytes of flash
0x0080-0x009F
Flash
Page 4, 32 bytes of flash
0x0060-0x007F
Flash
Page 3, 32 bytes of flash
0x0040-0x005F
Flash
Page 2, 32 bytes of flash
0x0020-0x003F
Flash
Page 1, 32 bytes of flash
0x0000-0x001F
Flash
Page 0, 32 bytes of flash
register descriptions
id ROM
The factory programmed ID ROM can be programmed to customers specification. Contact Texas Instruments
for details.
discharge count registers (DCRH/CRL0
The DCRH high-byte register (address 010F hex) and the DCRL low-byte register (address 010E hex), which
contain the count of the discharge, are incremented whenever VSRP < VSRN (1 LSB = 3.05 µV-hr). These
registers continue to count beyond FFFF hex, so proper register maintenance should be done by the host
system. The TMP/CLR register forces the reset of both the DCRH and DCRL to zero when the DCR bit is set.
charge count registers (CCRH/CCRL)
The CCRH high-byte register (address 010D hex) and the CCRL low-byte register (address 010C hex), which
contain the count of the charge, are incremented whenever VSRP > VSRN (1 LSB = 3.05 µV-hr). These registers
continue to count beyond FFFF hex, so proper register maintenance should be done by the host system. The
TMP/CLR register forces the reset of both the CCRH and CCRL to zero when the CCR bit is set.
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APPLICATION INFORMATION
register descriptions (continued)
self-discharge count registers (SCRH/SCRL)
The SCRH high-byte register (address 010B hex) and the SCRL low-byte register (address 010A hex) contain
the self-discharge count. This register is continually updated in both the normal operating and sleep modes of
the bq2023. The counts in these registers are incremented on the basis of time and temperature. The SCR
counts at 1 count per hour at 20–30°C and doubles every 10°C to greater than 60°C (16 counts/hour). The count
halves every 10°C below 20–30°C to less than 0°C (1 count/8 hours). These registers continue to count beyond
FFFF hex, so proper register maintenance should be done by the host system. The TMP/CLR register forces
the reset of both the SCRH and SCRL to zero when the SDR bit is set. During device sleep the bq2023 wakes
approximately every hour for 4 seconds to maintain the self-discharge registers.
discharge time count registers (DTCH/DTCL)
The DTCH high-byte register (address 0109 hex) and the DTCL low-byte register (address 0108 hex) determine
the length of time that VSRP < VSRN , indicating a discharge. The counts in these registers are incremented at
4096 counts per hour. If the DTCH/DTCL register continues to count beyond FFFF hex, the STD bit is set in
the MODE/WOE register indicating a rollover. Once set, DTCH and DTCL increment at 16 counts per hour.
NOTE:
If a second rollover occurs, STD is cleared. Access to the bq2023 should be timed to clear
DTCH/DTCL more often than every 170 days. The TEMP/CLR register forces the reset of both the
DTCH and DTCL to zero when the DTC bit is set.
charge time count registers (CTCH/CTCL)
The CTCH high-byte register (address 0107 hex) and the CTCL low-byte register (address 0106 hex) determine
the length of time that VSRP >VSRN, indicating a charge. The counts in these registers are incremented at 4096
counts per hour. If the CTCH/CTCL registers continue to count beyond FFFF hex, the STC bit is set in the
MODE/WOE register, indicating a rollover. Once set, CTCH and CTCL increment at 16 counts per hour.
NOTE:
If a second rollover occurs, STC is cleared. Access to the bq2023 should be timed to clear
CTCH/CTCL more often than every 170 days. The TMP/CLR register forces the reset of both the
CTCH and CTCL to zero when the CTC bit is set.
mode, wake-up enable register (MOE/WOE)
The Mode/WOE register (address 0105 hex) contains the SLEEP ENABLE bit, the STC and STD bits, and
wake-up enable information as described below:
MODE/WOE BITS
RSVD
7
6
5
4
3
2
1
0
RSVD
SLEN
STC
STD
WOE2
WOE1
WOE0
RSVD
BIT7 is a reserved bit and must always be set to 0. This bit is cleared on Power-on-Reset.
SLEN
The SLEN bit allows the bq2023 to enter sleep mode. The bq2023 enters sleep mode if battery
current (i.e., voltage difference between the SRP and SRN pins) is less than WOE threshold, the SLEN bit is
set, and there is no communication activity on the SDQ pin for approximately one hour. The bq2023 wakes on
either a low-to-high or high-to-low transition on the SDQ pin. The SLEN bit is set during power-on-reset or after
a wake-up condition.
NOTE:
Entering sleep mode does not clear this bit. It must be cleared by the host. This bit is set during
power-on-reset.
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SLUS480B – MAY 2001
APPLICATION INFORMATION
register descriptions (continued)
STC and STD The slow time charge (STC) and slow time discharge (STD) flags indicate if the CTC or DTC
registers have rolled over beyond FFFF hex. STC set to 1 indicates a CTC rollover; STD set to 1 indicates a
DTC rollover. These bits are in indeterminate states on power-on-reset.
WOE[2..0]
The wake-up output enable (WOE) bits (bits 3–1) set the wake-up enable signal level.
Whenever |VSRP– VSRN |<VWOE, and the SLEN bit is set the bq2023 will enter sleep mode, after approximately
one hour of inactivity on SDQ pin. Setting all of these bits to zero will cause the device to sleep if SLEN is set
and there is no SDQ activity, regardless of VSRP-VSRN voltage. Refer to Table 3 for the various WOE values.
All WOE bits are set to 1 on power-on-reset.
RSVD
BIT0 is a reserved bit and must always be set to 0. This bit is cleared on power-on-reset.
clear register (CLR)
As described in the table below, the bits in the CLR register (address 0104 hex) clear the DCR, CCR, SCR, DTC
and CTC registers, determine if a power-on-reset occurred, and set the state of the STAT pin.
CLR BITS
RSVD
7
6
5
4
3
2
1
0
RSVD
POR
STAT
CTC
DTC
SCR
CCR
DCR
Reserved for future use.
POR
The POR bit (bit 6) indicates a power-on-reset has occurred. This bit is set when VCC has gone
below the POR level. This bit can be set and cleared by the host, but setting has no effect.
STAT
The STAT bit (bit 5) sets the state of the open drain output of the STAT pin. A 1 turns off the open
drain output while a 0 turns the output on. This bit is set to a 1 on power-on-reset.
CTC
The CTC bit (bit 4) clears the CTCH, CTCL registers and the STC bit. A 1 clears the corresponding
registers and bit. After the registers are cleared, the CTC bit is cleared. This bit is cleared on power-on-reset.
DTC
The DTC bit (bit 3) clears the DTCH, DTCL registers and the STD bit. A 1 clears the corresponding
registers and bit. After the registers are cleared, the DTC bit is cleared. This bit is cleared on power-on-reset.
SCR
The SCR bit (bit 2) clears both the SCRH and SCRL registers. Writing a 1 to this bit clears the SCRH
and SCRL register. After these registers are cleared, the SCR bit is cleared. This bit is cleared on
power-on-reset.
CCR
The CCR bit (bit 1) clears both the CCRH and CCRL registers. Writing a 1 to this bit clears the CCRH
and CCRL registers. After these registers are cleared, the CCR bit is cleared. This bit is cleared on
power-on-reset.
DCR
The DCR bit (bit 0) clears both the DCRH and DCRL registers to 0. Writing a 1 to this bit clears the
SCRH and SCRL register. After these registers are cleared, the SCR bit is cleared. This bit is cleared on
power-on-reset.
temperature registers
The TMPH register (address 0103 hex) and the TMPL register (address 0102 hex) report die temperature in
hex format in increments of 0.25°K. These read-only temperature registers count at 1 count/0.25K. The read
at 25°C (i.e., 298°K) will be 0x4A8 hex.
22
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APPLICATION INFORMATION
register descriptions (continued)
flash erase disable (FED) register
The FED register (address 101 hex) contains the bits that disable the flash erase on page boundaries. When
a bit is cleared, the corresponding page of flash can no longer be programmed or erased. Once a disable erase
page bit has been set, it cannot be cleared. This register is a flash register, programmed using the write memory
command protocol, and it requires issuing the program code 5A hex after CRC verification.
FED BITS
7
6
5
4
3
2
1
0
RSVD
PAGE6
PAGE5
PAGE4
PAGE3
PAGE2
PAGE1
PAGE0
RSVD
Reserved for future use.
PAGE6
The PAGE6 bit disables PROGRAM/ERASE for flash memory locations C0 through DF hex when
set to 0.
PAGE5
The PAGE5 bit disables PROGRAM/ERASE for flash memory locations A0 through BF hex when
set to 0.
PAGE4
The PAGE4 bit disables PROGRAM/ERASE for flash memory locations 80 through 9F hex when set
to 0.
PAGE3
The PAGE3 bit disables PROGRAM/ERASE for flash memory locations 60 through 7F hex when set
to 0.
PAGE2
The PAGE2 bit disables PROGRAM/ERASE for flash memory locations 40 through 5F hex when set
to 0.
PAGE1
The PAGE1 bit disables PROGRAM/ERASE for flash memory locations 20 through 3F hex when set
to 0.
PAGE0
The PAGE0 bit disables PROGRAM/ERASE for flash memory locations 00 through 1F hex when set
to 0.
CRC generation
The bq2023 has an 8-bit CRC stored in the most significant byte of the 64-bit ROM. The bus master can compute
a CRC value from the first 56 bits of the 64-bit ROM and compare it to the value stored within the bq2023 to
determine if the ROM data have been received error-free by the bus master. The equivalent polynomial function
of this CRC is: X8 + X5 + X4 +1. The CRC generator circuit is shown in Figure 14.
Under certain conditions, the bq2023 also generates an 8-bit CRC value using the same polynomial function
shown above and provides this value to the bus master to validate the transfer of command, address, and data
bytes from the bus master to the bq2023. The bq2023 receives data bytes for the write memory and flash page
erase commands. It computes an 8-bit CRC for the command, address, and data bytes of each of these
commands and then outputs this value to the bus master to confirm proper transfer. Similarly the bq2023
computes an 8-bit CRC for the command and address bytes received from the bus master for the Read Memory
commands to confirm that these bytes have been received correctly.
In each case where a CRC is used for data transfer validation, the bus master must calculate a CRC value using
the polynomial function given above and compare the calculated value to either the 8-bit CRC value stored in
the 64-bit ROM portion of the bq2023 (for ROM reads) or the 8-bit CRC value computed within the bq2023. The
comparison of CRC values and decision to continue with an operation are determined entirely by the bus master.
There is no circuitry on the bq2023 that prevents a command sequence from proceeding if the CRC stored in
or calculated by the bq2023 does not match the value generated by the bus master.
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SLUS480B – MAY 2001
APPLICATION INFORMATION
CRC generation (continued)
CLK
SDQ
V
D
V
Q
R
D
V
Q
R
D
Q
R
D
V
V
V
Q
D
Q
R
R
D
V
Q
R
D
Q
R
Figure 14. 8-Bit CRC Generator Circuit (X8 + X5 + X4 + 1)
24
POST OFFICE BOX 655303
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V
D
Q
R
SLUS480B – MAY 2001
MECHANICAL DATA
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
0,65
14
0,10 M
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°–ā8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
8
14
16
20
24
28
A MAX
3,10
5,10
5,10
6,60
7,90
9,80
A MIN
2,90
4,90
4,90
6,40
7,70
9,60
DIM
4040064/F 01/97
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0,15.
Falls within JEDEC MO-153
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25
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
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