RB521G-30G Silicon Epitaxial Planar Schottky Barrier Diode for rectifying small power application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 E Top View Marking Code: "E" Simplified outline SOD-723 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 30 V Average Rectified Forward Current IO 100 mA IFSM 1 A Tj 125 O Tstg - 40 to + 125 O Symbol Max. Unit Forward Voltage at IF = 10 mA VF 0.35 V Reverse Current at VR = 10 V IR 10 µA Peak Forward Surge Current (60 Hz for 1 cyc.) Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Note: Please pay attention to static electricity when handling. SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 28/07/2010 Rev:01 RB521G-30G PACKAGE OUTLINE SOD-723 0.52±0.05 0.1±0.05 Plastic surface mounted package; 2 leads 0.2±0.05 1±0.1 0.6±0.1 0.28±0.05 1.4±0.1 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 28/07/2010 Rev:01