APT20M20B2LL
APT20M20LLL
200V 100A 0.020W
B2LL
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol
VDSS
ID
T-MAX™
TO-264
LLL
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20M20
UNIT
200
Volts
Drain-Source Voltage
L
A
C
I
N
H
C
N
E
T
IO
E
T
C MA
N
A OR
V
AD INF
Continuous Drain Current @ TC = 25°C
5
100
5
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
570
Watts
Linear Derating Factor
4.56
W/°C
VGSM
PD
TJ,TSTG
400
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
°C
300
100
(Repetitive and Non-Repetitive)
1
Amps
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
Volts
100
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.020
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
UNIT
3
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-7013 Rev- 1-2001
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT20M20 B2LL - LLL
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
5870
Coss
Output Capacitance
VDS = 25V
1990
Crss
Reverse Transfer Capacitance
f = 1 MHz
150
Qg
Total Gate Charge
VGS = 10V
145
Qgs
3
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
td(off)
tf
44
ID = ID[Cont.] @ 25°C
80
VGS = 15V
12
VDD = 0.5 VDSS
22
ID = ID[Cont.] @ 25°C
26
RG = 0.6W
6
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
VDD = 0.5 VDSS
Gate-Source Charge
Qgd
tr
MAX
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
TYP
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
MAX
100
(Body Diode)
400
(VGS = 0V, IS = -ID[Cont.])
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
330
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
5.8
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RqJC
Junction to Case
RqJA
Junction to Ambient
TYP
MAX
0.22
40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = .5mH, R = 25W, Peak I = 100A
j
G
L
5 The maximum current is limited by lead temperature
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
050-7013 Rev- 1-2001
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
25.48 (1.003)
26.49 (1.043)
Dimensions in Millimeters and (Inches)
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
UNIT
°C/W