MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 150 MHz 28 VOLTS POUT = 60W GP = 7.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation provide optimum VSWR capability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol VCBO VCEO VEBO PDISS IC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Collector current Junction Temperature Storage Temperature Value Unit 65.0 35.0 4.0 75.0 6.5 +200 -65 to +150 V V V W A °C °C 2.3 °C/W Thermal Data RTH(J-C) Thermal Resistance Junction-Case 053-7067 Rev - 10-2002 MS1329 ELECTRICAL SPE SPECIFICATIONS CIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVces BVceo BVebo Icbo HFE Test Conditions IC = 200mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0V VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA Min. Value Typ. Max. Unit 65.0 35.0 4.0 --10 ----------- ------2.0 150 V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 150 MHz PIN = 12W VCE = 28V 60.0 --- --- W PG f = 150 MHz PIN = 12W VCE = 28V 7.0 --- --- dB COB VCB = 28V f = 1 MHz --- --- 80.0 pf IMPEDANCE DATA FREQ ZIN(Ω) ZCL(Ω) 150 MHz 1.0 + j2.0 4.0 - j3.9 POUT = 60W VCE = 28V 053-7067 Rev - 10-2002 MS1329 PACKAGE MECHANICAL DATA 053-7067 Rev - 10-2002