MS1337 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 30W MINIMUM GP = 10 dB GAIN COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 36 18 36 4.0 8.0 70 +200 -65 to +150 V V V V A W °C °C 1.2 °C/W Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7069 Rev - 10-2002 MS1337 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC STATIC Symbol BVCES BVCEO BVEBO ICBO HFE Test Conditions IC = 15 mA IE = 50 mA IE = 5 mA VCB = 15 V VCE = 5 V VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 250 mA Min. Value Typ. Max. Unit 36 18 4.0 --20 ----------- ------5 200 V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f =175 MHz PIN = 3.0 W VCE =12.5 V 30 --- --- W GP f =175 MHz PIN = 3.0 W VCE =12.5 V 10 --- --- dB f =1 MHz VCB = 15 V --- --- 120 pf Cob IMPEDANCE DATA FREQ 175 MHz PIN = 3.0W VCE = 12.5V 053-7069 Rev - 10-2002 ZIN(Ω) ZCL(Ω) 1.0 +j0.4 2.3 + j0.1 MS1337 PACKAGE MECHANICAL DATA 053-7069 Rev - 10-2002