MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Paramete Co llector-base Voltage Co llector-emitter Voltage Emit ter-Base Voltage Dev ice Current Po wer Dissipation Ju nction Temperature Storage Temperature Thermal Thermal Data RTH(J-C) r Junction-case Thermal Resistance 053-7055 Rev - 10-2002 Value 65 36 4.0 4.5 80 +200 -65 to +150 2.2 U nit V V V A W C C C/W MS1226 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVcbo BVces BVceo BVebo Icbo HFE Test Conditions IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA Min. Value Typ. Max. Unit 65 65 35 4.0 --10 ------------- --------1.0 200 V V V V mA --- DYNAMIC DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 30 MHz PIN = 0.48W VCE = 28V 30 --- --- W GP f = 30 MHz PIN = 0.48W VCE = 28V 18 --- --- dB IMD f = 30 MHz PIN = 0.48W VCE = 28V --- ---- -28 Cob Conditions f = 1 MHz VCB = 30V --- --- 65 dBC pf VCE = 28 V 053-7055 Rev - 10-2002 ICQ = 25 mA MS1226 PACKAGE MECHANICAL DATA 053-7055 Rev - 10-2002