TI SN75423N

SN75423, SN75424
HIGH-VOLTAGE HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAYS
SLDS115 – FEBRUARY 1998
D
D
D
D
D
D
D
N PACKAGE
(TOP VIEW)
500-mA Rated Collector Current (Single
Output)
High-Voltage Outputs . . . 100 V
Output Clamp Diodes
Inputs Compatible With Various Types of
Logic
Relay Driver Applications
Compatible With ULN2800A Series
Packaged in Plastic (N) DIPs
1B
2B
3B
4B
5B
6B
7B
8B
GND
description
1
18
2
17
3
16
4
15
5
14
6
13
7
12
8
11
9
10
1C
2C
3C
4C
5C
6C
7C
8C
COM
The SN75423 and SN75424 are monolithic high-voltage, high-current Darlington transistor arrays. Each
consists of eight npn Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for
switching inductive loads. The collector-current rating of each Darlington pair is 500 mA. The Darlington pairs
can be paralleled for higher current capability. Applications include relay drivers, hammer drivers, lamp drivers,
display drivers (LED and gas discharge), line drivers, and logic buffers.
The SN75423 has a 2700-Ω series base resistor for each Darlington pair for operation directly with TTL or 5-V
CMOS. The SN75424 has a 10.5-kΩ series base resistor to allow operation directly with CMOS or PMOS that
use supply voltages of 6 to 15 V.
The SN75423 and SN75424 are designed for operation from 0_C to 85_C.
logic symbol†
logic diagram (positive logic)
CLAMP
1B
2B
3B
4B
5B
6B
7B
8B
10
1
18
2
17
3
16
4
15
5
14
6
13
7
12
8
11
COM
1B
1
18
2
17
3
16
4
15
5
14
6
13
7
12
8
11
1C
1C
2C
2B
2C
3C
4C
5C
3B
6C
7C
4B
3C
4C
8C
5B
† This symbol is in accordance with ANSI/IEEE
Std 91-1984 and IEC Publication 617-12.
6B
7B
8B
GND
9
E
10
5C
6C
7C
8C
COM
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
SN75423, SN75424
HIGH-VOLTAGE HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAYS
SLDS115 – FEBRUARY 1998
schematic (each Darlington pair)
COM
C
RB
B
To Seven Other
Darlington Transistor
Pairs
SN75423: RB = 2.7 kΩ
SN75424: RB = 10.5 kΩ
7.2 kΩ
3 kΩ
E
All resistor values shown are nominal.
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
Collector-emitter voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Input voltage, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Continuous collector current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Output clamp diode current, IOK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Total substrate-terminal current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 2.5 A
Continuous total power dissipation at or below 25°C free air temperature . . . . . . . . . . . . . . . . . . . . . 1150 mW
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
NOTE 1: All voltage values are with respect to the emitter/substrate, terminal 9.
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
SN75423, SN75424
HIGH-VOLTAGE HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAYS
SLDS115 – FEBRUARY 1998
electrical characteristics, TA = 25°C (unless otherwise noted)
PARAMETER
TEST
FIGURE
SN75423
TEST CONDITIONS
MIN
TYP
SN75424
MAX
IC = 125 mA
IC = 200 mA
VI(
I(on))
On state input voltage
On-state
VCE(sat)
( )
Collector-emitter
C
ll t
itt
saturation voltage
VF
Clamp-diode forward
voltage
ICEX
Collector cutoff
current
II(
ff)
I(off)
5
6
VCE = 2 V
MIN
MAX
2.7
IC = 300 mA
IC = 350 mA
3
6
7
IC = 100 mA
IC = 200 mA
0.9
1.1
0.9
1.1
1
1.3
1
1.3
II = 500 µA,
IC = 350 mA
1.2
1.6
1.2
1.6
1.7
2
1.7
2
1
VCE = 100 V,
II = 0
2
VCE = 100 V,,
TA = 70°C
VI = 1 V,
Off state input current
Off-state
3
VCE = 100 V,,
TA = 70°C
IC = 500 µ
µA,,
II(on)
( )
Input current
4
IR
Clamp-diode reverse
current
Ci
Input capacitance
100
50
65
0.93
50
V
µA
µA
65
1.35
VI = 12 V
VR = 100 V
0.35
0.5
1
1.45
15
30
mA
50
µA
15
30
pF
TYP
MAX
50
f = 1 MHz
V
100
500
VI = 3.85 V
VI = 5 V
VI = 0,
V
8
II = 250 µA,
II = 350 µA,
IF = 350 mA
UNIT
5
2.4
IC = 250 mA
IC = 275 mA
8
7
TYP
switching characteristics, TA = 25°C free-air temperature
PARAMETER
TEST CONDITIONS
MIN
UNIT
tPLH
Propagation delay time, low-to-high-level
output
VS = 50 V,
See Figure 9
RL = 163 Ω,
CL = 15 pF,
130
ns
tPHL
Propagation delay time, high-to-low-level
output
VS = 50 V,
See Figure 9
RL = 163 Ω,
CL = 15 pF,
20
ns
VOH
High-level output voltage after switching
VS = 60 V,
IO ≈ 300 mA,
See Figure 10
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
VS – 20
mV
3
SN75423, SN75424
HIGH-VOLTAGE HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAYS
SLDS115 – FEBRUARY 1998
PARAMETER MEASUREMENT INFORMATION
VCE
Open
VCE
Open
ICEX
ICEX
VI
Open
Figure 1. ICEX
Open
Figure 2. ICEX
Open
VCE
IC
II(off)
II(on)
VI
Open
Figure 3. II(off)
Figure 4. II(on)
Open
Open
hFE = IC
II
VI(on)
IC
VCE
II
VCE
Figure 5. VI(on)
IC
Figure 6. hFE, VCE(sat)
VR
IR
VF
Open
Open
Figure 7. IR
4
Figure 8. VF
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
IF
SN75423, SN75424
HIGH-VOLTAGE HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAYS
SLDS115 – FEBRUARY 1998
PARAMETER MEASUREMENT INFORMATION
Input
Open
VS = 50 V
RL = 163 Ω
Pulse
Generator
(see Note A)
Output
CL = 15 pF
(see Note B)
TEST CIRCUIT
≤ 10 ns
≤ 5 ns
90%
50%
Input
10%
VIH
(see Note C)
90%
50%
10%
0.5 µs
tPHL
0V
tPLH
VOH
Output
50%
50%
VOL
NOTES: A. The pulse generator has the following characteristics: PRR = 12.5 kHz, ZO = 50 Ω.
B. CL includes probe and jig capacitance.
C. For testing the SN75423, VIH = 3 V; for the SN75424, VIH = 8 V.
Figure 9. Propogation Delay Test Circuit and Voltage Waveforms
VS
Input
2 mH
200 Ω
Pulse
Generator
(see Note A)
Output
CL = 15 pF
(see Note B)
TEST CIRCUIT
≤ 10 ns
≤ 5 ns
90%
1.5 V
Input
VIH
(see Note C)
90%
1.5 V
10%
10%
40 µs
0V
VOH
Output
VOL
NOTES: A. The pulse generator has the following characteristics: PRR = 12.5 kHz, ZO = 50 Ω.
B. CL includes probe and jig capacitance.
C. For testing the SN75423, VIH = 3 V; for the SN75424, VIH = 8 V.
Figure 10. Latch-Up Test Circuit and Voltage Waveforms
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
PACKAGE OPTION ADDENDUM
www.ti.com
30-Mar-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
SN75423N
OBSOLETE
PDIP
N
18
TBD
Call TI
Call TI
SN75423N-90
OBSOLETE
PDIP
N
18
TBD
Call TI
Call TI
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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