TI TPS2012AD

TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
D
D
D
D
D
D
D
D
D
D
D
33-mΩ (5-V Input) High-Side MOSFET
Switch
Short-Circuit and Thermal Protection
Operating Range . . . 2.7 V to 5.5 V
Logic-Level Enable Input
Typical Rise Time . . . 6.1 ms
Undervoltage Lockout
Maximum Standby Supply
Current . . . 10 µA
No Drain-Source Back-Gate Diode
Available in 8-pin SOIC and 14-Pin TSSOP
Packages
Ambient Temperature Range, – 40°C to 85°C
2-kV Human-Body-Model, 200-V
Machine-Model ESD Protection
D PACKAGE
(TOP VIEW)
GND
IN
IN
EN
1
8
2
7
3
6
4
5
OUT
OUT
OUT
OUT
PWP PACKAGE
(TOP VIEW)
GND
IN
IN
IN
IN
IN
EN
1
14
2
13
3
12
4
11
5
10
6
9
7
8
OUT
OUT
OUT
OUT
OUT
OUT
OUT
description
The TPS201xA family of power distribution switches is intended for applications where heavy capacitive loads
and short circuits are likely to be encountered. These devices are 50-mΩ N-channel MOSFET high-side power
switches. The switch is controlled by a logic enable compatible with 5-V logic and 3-V logic. Gate drive is
provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize
current surges during switching. The charge pump requires no external components and allows operation from
supplies as low as 2.7 V.
When the output load exceeds the current-limit threshold or a short is present, the TPS201xA limits the output
current to a safe level by switching into a constant-current mode. When continuous heavy overloads and short
circuits increase the power dissipation in the switch, causing the junction temperature to rise, a thermal
protection circuit shuts off the switch to prevent damage. Recovery from a thermal shutdown is automatic once
the device has cooled sufficiently. Internal circuitry ensures the switch remains off until valid input voltage is
present.
The TPS201xA devices differ only in short-circuit current threshold. The TPS2010A limits at 0.3-A load, the
TPS2011 at 0.9-A load, the TPS2012A at 1.5-A load, and the TPS2013A at 2.2-A load (see Available Options).
The TPS201xA is available in an 8-pin small-outline integrated-circuit (SOIC) package and in a 14-pin
thin-shrink small-outline package (TSSOP) and operates over a junction temperature range of – 40°C to 125°C.
GENERAL SWITCH CATALOG
33 mΩ, single TPS201xA 0.2 A – 2 A
TPS202x
TPS203x
80 mΩ, single TPS2014
TPS2015
TPS2041
TPS2051
TPS2045
TPS2055
80 mΩ, dual
0.2 A – 2 A
0.2 A – 2 A
600 mA
1A
500 mA
500 mA
250 mA
250 mA
260 mΩ
IN1
OUT
IN2
1.3 Ω
TPS2042
TPS2052
TPS2046
TPS2056
500 mA
500 mA
250 mA
250 mA
TPS2100/1
IN1 500 mA
IN2 10 mA
TPS2102/3/4/5
IN1
500 mA
IN2
100 mA
80 mΩ, triple
TPS2043
TPS2053
TPS2047
TPS2057
500 mA
500 mA
250 mA
250 mA
80 mΩ, quad
TPS2044
TPS2054
TPS2048
TPS2058
500 mA
500 mA
250 mA
250 mA
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
AVAILABLE OPTIONS
TA
– 40°C to 85°C
ENABLE
RECOMMENDED
MAXIMUM CONTINUOUS
LOAD CURRENT
(A)
TYPICAL SHORT-CIRCUIT
CURRENT LIMIT AT 25°C
(A)
SMALL OUTLINE
(D)†
TSSOP
(PWP)‡
0.2
0.3
TPS2010AD
TPS2010APWPR
0.6
0.9
TPS2011AD
TPS2011APWPR
1
1.5
TPS2012AD
TPS2012APWPR
1.5
2.2
TPS2013AD
TPS2013APWPR
Active low
PACKAGED DEVICES
† The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2010DR)
‡ The PWP package is only available left-end taped-and-reeled.
TPS201xA functional block diagram
Power Switch
†
CS
IN
Charge
Pump
EN
Driver
Current
Limit
UVLO
Thermal
Sense
GND
†Current Sense
Terminal Functions
TERMINAL
NAME
EN
GND
IN
OUT
2
NO.
D
NO.
PWP
I/O
DESCRIPTION
4
7
I
Enable input. Logic low turns on power switch.
1
1
I
Ground
2, 3
2–6
I
Input voltage
5, 6, 7, 8
8–14
O
Power-switch output
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
OUT
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
detailed description
power switch
The power switch is an N-channel MOSFET with a maximum on-state resistance of 50 mΩ (VI(IN) = 5 V).
Configured as a high-side switch, the power switch prevents current flow from OUT to IN and IN to OUT when
disabled.
charge pump
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires
very little supply current.
driver
The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated
electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and
fall times of the output voltage. The rise and fall times are typically in the 2-ms to 9-ms range.
enable ( EN)
The logic enable disables the power switch, the bias for the charge pump, driver, and other circuitry to reduce
the supply current to less than 10 µA when a logic high is present on EN . A logic zero input on EN restores bias
to the drive and control circuits and turns the power on. The enable input is compatible with both TTL and CMOS
logic levels.
current sense
A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than
conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry
sends a control signal to the driver. The driver, in turn, reduces the gate voltage and drives the power FET into
its saturation region, which switches the output into a constant current mode and holds the current constant
while varying the voltage on the load.
thermal sense
An internal thermal-sense circuit shuts off the power switch when the junction temperature rises to
approximately 140°C. Hysteresis is built into the thermal sense circuit. After the device has cooled
approximately 20°C, the switch turns back on. The switch continues to cycle off and on until the fault is removed.
undervoltage lockout
A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V, a control
signal turns off the power switch.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Input voltage range, VI(IN) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 6 V
Output voltage range, VO(OUT) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to VI(IN) + 0.3 V
Input voltage range, VI(EN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 6 V
Continuous output current, IO(OUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . internally limited
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . 260°C
Electrostatic discharge (ESD) protection: Human body model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
Machine model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
D
725 mW
5.8 mW/°C
464 mW
377 mW
PWP
700 mW
5.6 mW/°C
448 mW
364 mW
recommended operating conditions
Input voltage
Continuous output current,
current IO
MIN
MAX
2.7
5.5
V
0
5.5
V
TPS2010A
0
0.2
TPS2011A
0
0.6
TPS2012A
0
1
VI(IN)
VI(EN)
TPS2013A
Operating virtual junction temperature, TJ
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
0
1.5
– 40
125
UNIT
A
°C
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
electrical characteristics over recommended operating junction temperature range, VI(IN)= 5.5 V,
IO = rated current, EN = 0 V (unless otherwise noted)
power switch
TEST CONDITIONS†
PARAMETER
rDS(on)
tr
tf
Static drain-source on-state resistance
Rise time
time, output
Fall time,
time output
MIN
TYP
MAX
VI(IN) = 5 V,
TJ = 25°C,
IO = 1.5 A
33
36
VI(IN) = 5 V,
TJ = 85°C,
IO = 1.5 A
38
46
VI(IN) = 5 V,
TJ = 125°C,
IO = 1.5 A
44
50
VI(IN) = 3.3 V,
TJ = 25°C,
IO = 1.5 A
37
41
VI(IN) = 3.3 V,
TJ = 85°C,
IO = 1.5 A
43
52
VI(IN) = 3.3 V,
TJ = 125°C,
IO = 1.5 A
51
61
VI(IN) = 5 V,
TJ = 25°C,
IO = 0.18 A
30
34
VI(IN) = 5 V,
TJ = 85°C,
IO = 0.18 A
35
41
VI(IN) = 5 V,
TJ = 125°C,
IO = 0.18 A
39
47
VI(IN) = 3.3 V,
TJ = 25°C,
IO = 0.18 A
33
37
VI(IN) = 3.3 V,
TJ = 85°C,
IO = 0.18 A
39
46
VI(IN) = 3.3 V,
TJ = 125°C,
IO = 0.18 A
44
56
VI(IN) = 5.5 V,
CL = 1 µF,
TJ = 25°C,
RL = 10 Ω
6.1
VI(IN) = 2.7 V,
CL = 1 µF,
TJ = 25°C,
RL = 10 Ω
8.6
VI(IN) = 5.5 V,
CL = 1 µF,
VI(IN) = 2.7 V,
CL = 1 µF,
TJ = 25°C,
RL = 10 Ω
TJ = 25°C,
RL = 10 Ω
UNIT
mΩ
ms
3.4
ms
3
† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
enable input ( EN)
PARAMETER
VIH
High-level input voltage
VIL
Low-level in
input
ut voltage
TEST CONDITIONS
2.7 V ≤ VI(IN) ≤ 5.5 V
TYP
MAX
2
0.8
2.7 V ≤ VI(IN) ≤ 4.5 V
0.5
Input current
EN = 0 V or EN = VI(IN)
ton
toff
Turnon time
CL = 100 µF, RL = 10 Ω
CL = 100 µF, RL = 10 Ω
UNIT
V
4.5 V ≤ VI(IN) ≤ 5.5 V
II
Turnoff time
MIN
– 0.5
0.5
20
40
V
µA
ms
current limit
PARAMETER
IOS
Short circuit output current
Short-circuit
TEST CONDITIONS†
TJ = 25°C, VI = 5.5 V,
OUT connected to GND,
GND
Device enable into short circuit
MIN
TYP
MAX
TPS2010A
0.22
0.3
0.4
TPS2011A
0.66
0.9
1.1
TPS2012A
1.1
1.5
1.8
UNIT
A
TPS2013A
1.65
2.2
2.7
† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
electrical characteristics over recommended operating junction temperature range, VI(IN)= 5.5 V,
IO = rated current, EN = 0 V (unless otherwise noted) (continued)
supply current
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
Supply current
current, low
low-level
level output
No Load on OUT
TJ = 25°C
– 40°C ≤ TJ ≤ 125°C
0.3
EN = VI(IN)
1
current high-level
high level output
Supply current,
No Load on OUT
TJ = 25°C
– 40°C ≤ TJ ≤ 125°C
58
75
EN = 0 V
75
100
Leakage current
OUT connected to ground
EN = VI(IN)
– 40°C ≤ TJ ≤ 125°C
10
10
UNIT
µA
µA
µA
undervoltage lockout
PARAMETER
TEST CONDITIONS
Low-level input voltage
TYP
2
Hysteresis
6
MIN
TJ = 25°C
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MAX
2.5
100
UNIT
V
mV
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
PARAMETER MEASUREMENT INFORMATION
OUT
RL
tf
tr
CL
VO(OUT)
90%
10%
90%
10%
TEST CIRCUIT
50%
VI(EN)
50%
toff
ton
90%
VO(OUT)
10%
VOLTAGE WAVEFORMS
Figure 1. Test Circuit and Voltage Waveforms
Table of Timing Diagrams
FIGURE
Turnon Delay and Rise TIme
2
Turnoff Delay and Fall Time
3
Turnon Delay and Rise TIme with 1-µF Load
4
Turnoff Delay and Rise TIme with 1-µF Load
5
Device Enabled into Short
6
TPS2010A, TPS2011A, TPS2012A, and TPS2013A, Ramped Load on Enabled Device
7, 8, 9, 10
TPS2013A, Inrush Current
11
7.9-Ω Load Connected to an Enabled TPS2010A Device
12
3.7-Ω Load Connected to an Enabled TPS2010A Device
13
3.7-Ω Load Connected to an Enabled TPS2011A Device
14
2.6-Ω Load Connected to an Enabled TPS2011A Device
15
2.6-Ω Load Connected to an Enabled TPS2012A Device
16
1.2-Ω Load Connected to an Enabled TPS2012A Device
17
1.2-Ω Load Connected to an Enabled TPS2013A Device
18
0.9-Ω Load Connected to an Enabled TPS2013A Device
19
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
PARAMETER MEASUREMENT INFORMATION
VI(EN) (5 V/div)
VI(EN) (5 V/div)
VI(EN)
VI(EN)
VI(IN) = 5 V
RL = 27 Ω
TA = 25°C
VO(OUT) (2 V/div)
VO(OUT) (2 V/div)
VIN = 5 V
RL = 27 Ω
TA = 25°C
VO(OUT)
0
2
4
6
8
10
12
14
16
18
VO(OUT)
20
2
0
4
6
8
12
14
16
18
20
t – Time – ms
t – Time – ms
Figure 2. Turnon Delay and Rise Time
Figure 3. Turnoff Delay and Fall Time
VI(EN) (5 V/div)
VI(EN) (5 V/div)
VI(EN)
VI(EN)
VO(OUT) (2 V/div)
VO(OUT) (2 V/div)
VI(IN) = 5 V
CL = 1 µF
RL = 27 Ω
TA = 25°C
VO(OUT)
0
2
4
6
8
10
12
14
16
18
VI(IN) = 5 V
CL = 1 µF
RL = 27 Ω
TA = 25°C
VO(OUT)
20
0
2
4
6
8
10
12
14
16
18
t – Time – ms
t – Time – ms
Figure 4. Turnon Delay and Rise Time
With 1-µF Load
8
10
POST OFFICE BOX 655303
Figure 5. Turnoff Delay and Fall Time
With 1-µF Load
• DALLAS, TEXAS 75265
20
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
PARAMETER MEASUREMENT INFORMATION
VI(IN) = 5 V
TA = 25°C
VI(EN)
VI(EN) (5 V/div)
VI(IN) = 5 V
TA = 25°C
TPS2013A
IO(OUT) (500 mA/div)
TPS2012A
TPS2011A
TPS2010A
IO(OUT)
IO(OUT)
IO(OUT) (1 A/div)
0
1
2
3
4
5
6
7
8
9
0
10
20
40
60
80 100 120 140 160 180 200
t – Time – ms
t – Time – ms
Figure 7. TPS2010A, Ramped Load on
Enabled Device
Figure 6. Device Enabled Into Short
VI(IN) = 5 V
TA = 25°C
VI(IN) = 5 V
TA = 25°C
IO(OUT) (1 A/div)
IO(OUT) (1 A/div)
IO(OUT)
IO(OUT)
0
20
40
60
80 100 120 140 160 180 200
0
20
40
60
80 100 120 140 160 180 200
t – Time – ms
t – Time – ms
Figure 8. TPS2011A, Ramped Load on Enabled
Device
POST OFFICE BOX 655303
Figure 9. TPS2012A, Ramped Load on
Enabled Device
• DALLAS, TEXAS 75265
9
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
PARAMETER MEASUREMENT INFORMATION
VI(IN) = 5 V
TA = 25°C
VI(EN)
VI(EN) (5 V/div)
470 µF
150 µF
IO(OUT) (1 A/div)
IO(OUT)
II(IN) (500 mA/div)
RL = 10 Ω
TA = 25°C
II(IN)
47 µF
0
20
40
60
80 100 120 140 160 180 200
0
1
2
3
t – Time – ms
4
5
6
7
8
9
10
t – Time – ms
Figure 10. TPS2013A, Ramped Load on
Enabled Device
Figure 11. TPS2013A, Inrush Current
VI(IN) = 5 V
RL = 3.7 Ω
TA = 25°C
VI(IN) = 5 V
RL = 7.9 Ω
TA = 25°C
IO(OUT) (200 mA/div)
IO(OUT) (500 mA/div)
IO(OUT)
IO(OUT)
0
200 400 600 800 1000 1200 1400 1600 1800 2000
0
50 100 150 200 250 300 350 400 450 500
t – Time – µs
t – Time – µs
Figure 12. 7.9-Ω Load Connected to an Enabled
TPS2010A Device
10
POST OFFICE BOX 655303
Figure 13. 3.7-Ω Load Connected to an Enabled
TPS2010A Device
• DALLAS, TEXAS 75265
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
PARAMETER MEASUREMENT INFORMATION
VI(IN) = 5 V
RL = 3.7 Ω
TA = 25°C
VI(IN) = 5 V
RL = 2.6 Ω
TA = 25°C
IO(OUT) (1 A/div)
IO(OUT) (1 A/div)
IO(OUT)
IO(OUT)
0
200 400 600 800 1000 1200 1400 1600 1800 2000
0
50 100 150 200 250 300 350 400 450 500
t – Time – µs
t – Time – µs
Figure 14. 3.7-Ω Load Connected to an Enabled
TPS2011A Device
Figure 15. 2.6-Ω Load Connected to an Enabled
TPS2011A Device
VI(IN) = 5 V
RL = 1.2 Ω
TA = 25°C
VI(IN) = 5 V
RL = 2.6 Ω
TA = 25°C
IO(OUT) (1 A/div)
IO(OUT) (1 A/div)
IO(OUT)
IO(OUT)
0
200 400 600 800 1000 1200 1400 1600 1800 2000
0
100 200 300 400 500 600 700 800 900 1000
t – Time – µs
t – Time – µs
Figure 16. 2.6-Ω Load Connected to an Enabled
TPS2012A Device
POST OFFICE BOX 655303
Figure 17. 1.2-Ω Load Connected to an Enabled
TPS2012A Device
• DALLAS, TEXAS 75265
11
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
PARAMETER MEASUREMENT INFORMATION
VI(IN) = 5 V
RL = 1.2 Ω
TA = 25°C
IO(OUT) (2 A/div)
IO(OUT)
0
100 200 300 400 500 600 700 800 900 1000
t – Time – µs
Figure 18. 1.2-Ω Load Connected to an Enabled
TPS2013A Device
VI(IN) = 5 V
RL = 0.9 Ω
TA = 25°C
IO(OUT) (2 A/div)
IO(OUT)
0
100 200 300 400 500 600 700 800 900 1000
t – Time – µs
Figure 19. 0.9-Ω Load Connected to an Enabled
TPS2013A Device
12
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
td(on)
td(off)
Turnon delay time
vs Output voltage
20
Turnoff delay time
vs Input voltage
21
tr
tf
Rise time
vs Load current
22
Fall time
vs Load current
23
Supply current (enabled)
vs Junction temperature
24
Supply current (disabled)
vs Junction temperature
25
Supply current (enabled)
vs Input voltage
26
Supply current (disabled)
vs Input voltage
27
vs Input voltage
28
vs Junction temperature
29
vs Input voltage
30
vs Junction temperature
31
vs Input voltage
32
vs Junction temperature
33
Undervoltage lockout
34
IOS
rDS(
DS(on))
VI
Short circuit current limit
Short-circuit
Static drain-source
drain source on-state
on state resistance
Input voltage
TURNON DELAY TIME
vs
OUTPUT VOLTAGE
TURNOFF DELAY TIME
vs
INPUT VOLTAGE
18
TA = 25°C
CL = 1 µF
7
t d(off) – Turn-off Delay Time – ms
t d(on) – Turn-on Delay Time – ms
7.5
6.5
6
5.5
5
4.5
TA = 25°C
CL = 1 µF
17.5
17
16.5
4
3.5
2.5
3
5
3.5
4
4.5
VI – Input Voltage – V
5.5
6
16
2.5
3
Figure 20
3.5
4
4.5
5
VI – Input Voltage – V
5.5
6
Figure 21
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SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
TYPICAL CHARACTERISTICS
RISE TIME
vs
LOAD CURRENT
FALL TIME
vs
LOAD CURRENT
6.5
3.5
TA = 25°C
CL = 1 µF
TA = 25°C
CL = 1 µF
t f – Fall Time – ms
t r – Rise Time – ms
3.25
6
5.5
3
2.75
5
0
0.5
1
1.5
IL – Load Current – A
2.5
2
0
0.5
Figure 22
SUPPLY CURRENT (DISABLED)
vs
JUNCTION TEMPERATURE
5
VI(IN) = 5.5 V
Supply Current (Disabled) – µ A
Supply Current (Enabled) – µ A
75
VI(IN) = 5 V
55
VI(IN) = 4 V
45
VI(IN) = 3.3 V
VI(IN) = 2.7 V
–50 –25
75
100 125
0
25
50
TJ – Junction Temperature – °C
VI(IN) = 5.5 V
VI(IN) = 5 V
4
3
2
1
VI(IN) = 4 V
VI(IN) = 3.3 V
0
VI(IN) = 2.7 V
35
150
–1
–50 –25
Figure 24
14
2
Figure 23
SUPPLY CURRENT (ENABLED)
vs
JUNCTION TEMPERATURE
65
1
1.5
IL – Load Current – A
75
100 125
0
25
50
TJ – Junction Temperature – °C
Figure 25
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POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
TYPICAL CHARACTERISTICS
SUPPLY CURRENT (ENABLED)
vs
INPUT VOLTAGE
SUPPLY CURRENT (DISABLED)
vs
INPUT VOLTAGE
75
5
TJ = 85°C
Supply Current (Disabled) – µ A
Supply Current (Enabled) – µ A
TJ = 125°C
65
55
45
TJ = 25°C
TJ = 125°C
4
3
TJ = 85°C
2
1
TJ = 25°C
0
TJ = 0°C
TJ = 0°C
TJ = –40°C
TJ = –40°C
35
2.5
5
3.5
4
4.5
VI – Input Voltage – V
3
5.5
–1
6
2.5
3
Figure 26
5
3.5
4
4.5
VI – Input Voltage – V
5.5
6
Figure 27
SHORT-CIRCUIT CURRENT LIMIT
vs
INPUT VOLTAGE
SHORT-CIRCUIT CURRENT LIMIT
vs
JUNCTION TEMPERATURE
3.5
3.5
I OS – Short-Circuit Current Limit – A
I OS – Short-Circuit Current Limit – A
TA = 25°C
3
2.5
TPS2013A
2
TPS2012A
1.5
1
TPS2011A
0.5
TPS2010A
0
2
3
5
4
VI – Input Voltage – V
6
3
2.5
TPS2013A
2
TPS2012A
1.5
TPS2011A
1
TPS2010A
0.5
0
–50
50
75
–25
0
25
TJ – Junction Temperature – °C
Figure 28
100
Figure 29
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POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
INPUT VOLTAGE
60
IO = 0.18 A
50
TJ = 125°C
40
TJ = 25°C
30
TJ = –40°C
20
2.5
3
3.5
4
4.5
5
VI – Input Voltage – V
6
5.5
r DS(on) – Static Drain-Source On-State Resistance – m Ω
r DS(on) – Static Drain-Source On-State Resistance – m Ω
TYPICAL CHARACTERISTICS
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
60
IO = 0.18 A
50
VI = 2.7 V
40
VI = 3.3 V
30
VI = 5.5 V
20
–50 –25
50
75 100 125
0
25
TJ – Junction Temperature – °C
Figure 31
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
INPUT VOLTAGE
60
IO = 1.5 A
50
TJ = 125°C
40
TJ = 25°C
TJ = –40°C
30
20
3
3.5
4
4.5
5
VI – Input Voltage – V
5.5
6
r DS(on) – Static Drain-Source On-State Resistance – m Ω
r DS(on) – Static Drain-Source On-State Resistance – m Ω
Figure 30
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
60
IO = 1.5 A
50
VI = 3.3 V
VI = 4 V
40
VI = 5.5 V
30
20
–50 –25
Figure 32
16
150
0
25
50
75 100 125
TJ – Junction Temperature – °C
Figure 33
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TYPICAL CHARACTERISTICS
UNDERVOLTAGE LOCKOUT
2.5
VI – Input Voltage – V
2.4
Start Threshold
2.3
2.2
Stop Threshold
2.1
2
–50
0
150
50
100
TJ – Temperature – °C
Figure 34
APPLICATION INFORMATION
TPS2013A
Power Supply
2.7 V to 5.5 V
2,3
IN
5,6,7,8
0.1 µF
Load
OUT
0.1 µF
4
22 µF
EN
GND
1
Figure 35. Typical Application
power-supply considerations
A 0.01-µF to 0.1-µF ceramic bypass capacitor between IN and GND, close to the device, is recommended.
Placing a high-value electrolytic capacitor on the output and input pins is recommended when the output load
is heavy. This precaution reduces power supply transients that may cause ringing on the input. Additionally,
bypassing the output with a 0.01-µF to 0.1-µF ceramic capacitor improves the immunity of the device to
short-circuit transients.
overcurrent
A sense FET checks for overcurrent conditions. Unlike current-sense resistors, sense FETs do not increase the
series resistance of the current path. When an overcurrent condition is detected, the device maintains a
constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault
is present long enough to activate thermal limiting.
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APPLICATION INFORMATION
overcurrent (continued)
Three possible overload conditions can occur. In the first condition, the output has been shorted before the
device is enabled or before VI(IN) has been applied (see Figure 6). The TPS201xA senses the short and
immediately switches into a constant-current output.
In the second condition, the excessive load occurs while the device is enabled. At the instant the excessive load
occurs, very high currents may flow for a short time before the current-limit circuit can react (see Figures 12–19).
After the current-limit circuit has tripped (reached the overcurrent trip threshhold) the device switches into
constant-current mode.
In the third condition, the load has been gradually increased beyond the recommended operating current. The
current is permitted to rise until the current-limit threshold is reached or until the thermal limit of the device is
exceeded (see Figures 7–10). The TPS201xA is capable of delivering current up to the current-limit threshold
without damaging the device. Once the threshold has been reached, the device switches into its
constant-current mode.
power dissipation and junction temperature
The low on-resistance on the n-channel MOSFET allows small surface-mount packages, such as SOIC, to pass
large currents. The thermal resistances of these packages are high compared to those of power packages; it
is good design practice to check power dissipation and junction temperature. The first step is to find rDS(on) at
the input voltage and operating temperature. As an initial estimate, use the highest operating ambient
temperature of interest and read rDS(on) from Figures 30–33. Next, calculate the power dissipation using:
PD
+ rDS(on)
I2
Finally, calculate the junction temperature:
TJ
Where:
+ PD
R qJA
) TA
TA = Ambient Temperature °C
RθJA = Thermal resistance SOIC = 172°C/W
Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees,
repeat the calculation, using the calculated value as the new estimate. Two or three iterations are generally
sufficient to get an acceptable answer.
thermal protection
Thermal protection prevents damage to the IC when heavy-overload or short-circuit faults are present for
extended periods of time. The faults force the TPS201xA into constant current mode, which causes the voltage
across the high-side switch to increase; under short-circuit conditions, the voltage across the switch is equal
to the input voltage. The increased dissipation causes the junction temperature to rise to high levels. The
protection circuit senses the junction temperature of the switch and shuts it off. Hysteresis is built into the thermal
sense circuit, and after the device has cooled approximately 20 degrees, the switch turns back on. The switch
continues to cycle in this manner until the load fault or input power is removed.
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APPLICATION INFORMATION
undervoltage lockout (UVLO)
An undervoltage lockout ensures that the power switch is in the off state at power up. Whenever the input voltage
falls below approximately 2 V, the power switch will be quickly turned off. This facilitates the design of
hot-insertion systems where it is not possible to turn off the power switch before input power is removed. The
UVLO will also keep the switch from being turned on until the power supply has reached at least 2 V, even if
the switch is enabled. Upon reinsertion, the power switch will be turned on, with a controlled rise time to reduce
EMI and voltage overshoots.
generic hot-plug applications (see Figure 36)
In many applications it may be necessary to remove modules or pc boards while the main unit is still operating.
These are considered hot-plug applications. Such implementations require the control of current surges seen
by the main power supply and the card being inserted. The most effective way to control these surges is to limit
and slowly ramp the current and voltage being applied to the card, similar to the way in which a power supply
normally turns on. Because of the controlled rise times and fall times of the TPS201xA series, these devices
can be used to provide a softer start-up to devices being hot-plugged into a powered system. The UVLO feature
of the TPS201xA also ensures the switch will be off after the card has been removed, and the switch will be off
during the next insertion. The UVLO feature guarantees a soft start with a controlled rise time for every insertion
of the card or module.
PC Board
TPS2013A
Power
Supply
2.7 V to 5.5 V
1000 µF
Optimum
0.1 µF
GND
OUT
IN
OUT
IN
OUT
EN
OUT
Block of
Circuitry
Figure 36. Typical Hot-Plug Implementation
By placing the TPS201xA between the VCC input and the rest of the circuitry, the input power will reach this
device first after insertion. The typical rise time of the switch is approximately 9 ms, providing a slow voltage
ramp at the output of the device. This implementation controls system surge currents and provides a
hot-plugging mechanism for any device.
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MECHANICAL DATA
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
0.050 (1,27)
0.020 (0,51)
0.014 (0,35)
14
0.010 (0,25) M
8
0.008 (0,20) NOM
0.244 (6,20)
0.228 (5,80)
0.157 (4,00)
0.150 (3,81)
Gage Plane
0.010 (0,25)
1
7
0°– 8°
A
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.069 (1,75) MAX
0.010 (0,25)
0.004 (0,10)
PINS **
0.004 (0,10)
8
14
16
A MAX
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MIN
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
DIM
4040047 / D 10/96
NOTES: A.
B.
C.
D.
20
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
Falls within JEDEC MS-012
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MECHANICAL DATA
PWP (R-PDSO-G**)
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE
20-PIN SHOWN
0,30
0,19
0,65
20
0,10 M
11
Thermal Pad
(See Note D)
4,50
4,30
0,15 NOM
6,60
6,20
Gage Plane
1
10
0,25
A
0°– 8°
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
14
16
20
24
28
A MAX
5,10
5,10
6,60
7,90
9,80
A MIN
4,90
4,90
6,40
7,70
9,60
DIM
4073225/E 03/97
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusions.
The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. This pad is electrically
and thermally connected to the backside of the die and possibly selected leads.
E. Falls within JEDEC MO-153
PowerPAD is a trademark of Texas Instruments Incorporated.
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