21–24 GHz GaAs MMIC Low Noise Amplifier AA022N1-00 ■ 19 dB Typical Small Signal Gain 2.245 2.091 1.829 ■ 2.6 dB Typical Noise Figure at 23 GHz 1.605 ■ Single Bias Supply Operation (4.5 V) Chip Outline 1.084 Features 1.250 1.162 1.172 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF, DC and Noise Figure Testing 0.493 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 0.000 0.124 0.087 Description Alpha’s three-stage reactively-matched 21–24 GHz MMIC low noise amplifier has typical small signal gain of 19 dB with a typical noise figure of 2.6 dB at 23 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. 2.355 2.268 1.957 1.056 0.235 0.000 0.087 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55°C to +90°C Storage Temperature (TST) -65°C to +150°C Bias Voltage (VD) 6 VDC Power In (PIN) 10 dBm Junction Temperature (TJ) 175°C Electrical Specifications at 25°C (VDS = 4.5 V) Parameter Condition Drain Current Symbol Min. IDS 16 Typ.3 Max. Unit 35 50 mA Small Signal Gain F = 21–24 GHz G 19 Noise Figure F = 23 GHz NF 2.6 2.8 dB dB Input Return Loss F = 21–24 GHz RLI -7 -6 dB -10 Output Return Loss F = 21–24 GHz RLO -14 Output Power at 1 dB Gain Compression1 F = 23 GHz P1 dB 8 dBm ΘJC 92 °C/W Thermal Resistance2 dB 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A 1 21–24 GHz GaAs MMIC Low Noise Amplifier AA022N1-00 Typical Performance Data Bias Arrangement .01 µF 30 20 VD2 50 pF S21 10 (dB) 0 S11 -10 -20 S22 -30 -40 -50 RF OUT RF IN S12 -60 .01 µF 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Typical Small Signal Performance S-Parameters (VD = 4.5 V) 4.5 21 20 NF 3.5 V 3.0 D 22 19 NF* 2.5 V-5 V Gain (dB) Noise Figure (dB) 23 Gain 4.5 V NF 4.5 V 3.5 Circuit Schematic 24 Gain 3.5 V 4.0 For biasing on, adjust VDS from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure. 25 Gain* 2.5 V-5 V 50 pF VD1 18 2.5 17 G 16 2.0 15 Detail A 17 18 19 20 21 22 23 24 25 26 27 28 29 30 VD2 Frequency (GHz) Typical Gain and Noise Figure Performance for Three Bias Conditions 24 22 20 18 16 14 12 10 8 6 4 2 1.0 37 35 33 31 29 27 25 23 21 19 17 15 Gain ID NF 2.0 3.0 4.0 5.0 RF IN SEE DETAIL A G G G D D D Drain Current (mA) 23 GHz Gain (dB) and 23 GHz Noise Figure (dB) *Special Bias: VD1 = 2.5 V, VD2 = 5.0 V 6.0 VD1 and VD2 (V) Typical Gain and Noise Figure Performance vs. Drain Bias (VD1 = VD2) 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A RF OUT VD1