25–29 GHz GaAs MMIC Driver Amplifier AA026P1-00 Features Chip Outline ■ Single Bias Supply Operation (6 V) 1.760 ■ 17 dB Typical Small Signal Gain ■ 16 dBm Typical P1 dB Output Power at 26.5 GHz 0.853 ■ 0.25 µm Ti/Pd/Au Gates 0.112 ■ 100% On-Wafer RF and DC Testing 0.000 3.200 2.582 2.120 1.647 1.418 0.561 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 0.000 0.194 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha’s three-stage reactively-matched 25–29 GHz GaAs MMIC driver amplifier has typical small signal gain of 17 dB with a typical P1 dB of 16 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55°C to +90°C Storage Temperature (TST) -65°C to +150°C Bias Voltage (VD) 7 VDC Power In (PIN) 16 dBm Junction Temperature (TJ) 175°C Electrical Specifications at 25°C (VDS = 6 V) Parameter Condition Drain Current Symbol Min. IDS Small Signal Gain F = 25–29 GHz G 14 Typ.2 Max. Unit 120 170 mA 17 dB Input Return Loss F = 25–29 GHz RLI -8 -6 dB Output Return Loss F = 25–29 GHz RLO -10 -6 dB Output Power at 1 dB Gain Compression F = 26.5 GHz P1 dB 14 16 dBm Saturated Output Power F = 26.5 GHz PSAT 15 17 dBm 132 °C/W Thermal ΘJC Resistance1 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A 1 25–29 GHz GaAs MMIC Driver Amplifier AA026P1-00 Typical Performance Data Circuit Schematic 20 (dB) 10 0 S21 S22 -10 S11 -20 Detail A -30 -40 S12 See Detail A -50 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) RF IN V+ Typical Small Signal Performance S-Parameters (VD = 6 V) Bias Arrangement RF IN RF OUT 6V .01 µF 50 pF For biasing on, adjust VDS from zero to the desired value (6 V recommended). For biasing off, reverse the biasing on procedure. 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A RF OUT