ALPHA AA026P1-00

25–29 GHz GaAs MMIC
Driver Amplifier
AA026P1-00
Features
Chip Outline
■ Single Bias Supply Operation (6 V)
1.760
■ 17 dB Typical Small Signal Gain
■ 16 dBm Typical P1 dB Output Power
at 26.5 GHz
0.853
■ 0.25 µm Ti/Pd/Au Gates
0.112
■ 100% On-Wafer RF and DC Testing
0.000
3.200
2.582
2.120
1.647
1.418
0.561
■ 100% Visual Inspection to MIL-STD-883
MT 2010
0.000
0.194
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Description
Alpha’s three-stage reactively-matched 25–29 GHz
GaAs MMIC driver amplifier has typical small signal gain
of 17 dB with a typical P1 dB of 16 dBm at 26.5 GHz.
The chip uses Alpha’s proven 0.25 µm MESFET
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for gain, output power and S-parameters
prior to shipment for guaranteed performance.
Absolute Maximum Ratings
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)
7 VDC
Power In (PIN)
16 dBm
Junction Temperature (TJ)
175°C
Electrical Specifications at 25°C (VDS = 6 V)
Parameter
Condition
Drain Current
Symbol
Min.
IDS
Small Signal Gain
F = 25–29 GHz
G
14
Typ.2
Max.
Unit
120
170
mA
17
dB
Input Return Loss
F = 25–29 GHz
RLI
-8
-6
dB
Output Return Loss
F = 25–29 GHz
RLO
-10
-6
dB
Output Power at 1 dB Gain Compression
F = 26.5 GHz
P1 dB
14
16
dBm
Saturated Output Power
F = 26.5 GHz
PSAT
15
17
dBm
132
°C/W
Thermal
ΘJC
Resistance1
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
1
25–29 GHz GaAs MMIC Driver Amplifier
AA026P1-00
Typical Performance Data
Circuit Schematic
20
(dB)
10
0
S21
S22
-10
S11
-20
Detail A
-30
-40
S12
See
Detail A
-50
20 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
RF IN
V+
Typical Small Signal Performance
S-Parameters (VD = 6 V)
Bias Arrangement
RF IN
RF OUT
6V
.01 µF
50 pF
For biasing on, adjust VDS from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
RF OUT