A42U0616 Series Preliminary 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 Preliminary History Issue Date Remark Initial issue June 13, 2001 Preliminary (June, 2001, Version 0.0) AMIC Technology, Inc. A42U0616 Series Preliminary 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Features n Organization: 1,048,576 words X 16 bits n Part Identification - A42U0616 (1K Ref.) n Single 2.5V power supply/built-in VBB generator n Low power consumption - Operating: 120mA (-50 max) - Standby: 1mA (TTL), 0.2mA (CMOS), 250µA (Self-refresh current) n High speed - 50/60/80 ns RAS access time - 25/30/40 ns column address access time - 13/15/20 ns CAS access time - 20/25/35 ns EDO Page Mode Cycle Time n Separate CAS ( UCAS , LCAS ) for byte selection n Fast Page Mode with Extended Data Out n Read-modify-write, RAS -only, CAS -before- RAS , Hidden refresh capability n TTL-compatible, three-state I/O n JEDEC standard packages - 400mil, 42-pin SOJ - 400mil, 50/44 TSOP type II package General Description This allow random access of up to 1024(1K Ref.) words within a row at a 50/40/28 MHz EDO cycle, making the A42U0616 ideally suited for graphics, digital signal processing and high performance computing systems. The A42U0616 is a new generation randomly accessed memory for graphics, organized in a 1,048,576 -word by 16-bit configuration. This product can execute Write and Read operation via CAS pin. The A42U0616 offers an accelerated Fast Page Mode cycle with a feature called Extended Data Out (EDO). Pin Configuration n SOJ PRELIMINARY 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A9 A8 A7 A6 24 23 22 A5 A4 VSS VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC 1 2 3 4 5 6 7 8 9 10 11 NC NC WE RAS NC NC A0 A1 A2 A3 12 13 14 15 16 17 18 19 20 21 VCC 22 (June, 2001, Version 0.0) Pin Descriptions A42U0616V 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 A42U0616S VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC n TSOP 44 43 42 41 40 39 38 37 36 35 34 VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC 33 32 31 30 29 28 27 26 25 24 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 23 VSS Symbol Description A0 - A9 Address Inputs (1K product) I/O0 - I/O15 Data Input/Output RAS Row Address Strobe LCAS Column Address Strobe for Lower Byte (I/O0 – I/O7) UCAS Column Address Strobe for Upper Byte (I/O8 – I/O15) 1 WE Write Enable OE Output Enable VCC 2.5V Power Supply VSS Ground NC No Connection AMIC Technology, Inc. A42U0616 Series Selection Guide Symbol Description -50 -60 -80 Unit tRAC Maximum RAS Access Time 50 60 80 ns tAA Maximum Column Address Access Time 25 30 40 ns tCAC Maximum CAS Access Time 13 15 20 ns tOEA Maximum Output Enable ( OE ) Access Time 13 15 20 ns tRC Minimum Read or Write Cycle Time 84 104 134 ns tPC Minimum EDO Cycle Time 20 25 35 ns Functional Description The A42U0616 reads and writes data by multiplexing an 20-bit address into a 10-bit row and 10-bit column address. RAS and CAS are used to strobe the row address and the column address, respectively. keeps the output drivers on during the CAS precharge time (tcp). Since data can be output after CAS goes high, the user is not required to wait for valid data to appear before starting the next access cycle. Data-out will remain valid as long as RAS and OE are low, and WE is high; this is the only characteristic which differentiates Extended Data Out operation from a standard Read or Fast Page Read. The A42U0616 has two CAS inputs: LCAS controls I/O0I/O7, and UCAS controls I/O8 - I/O15, UCAS and LCAS function in an identical manner to CAS in that either will generate an internal CAS signal. The CAS function and A memory cycle is terminated by returning both RAS and CAS high. Memory cell data will retain its correct state by maintaining power and accessing all 1024(1K) combinations of the 10-bit row addresses, regardless of sequence, at least once every 16ms through any RAS cycle (Read, Write) or RAS Refresh cycle ( RAS -only, CBR, or Hidden). The CBR Refresh cycle automatically controls the row addresses by invoking the refresh counter and controller. timing are determined by the first CAS ( UCAS or LCAS ) to transition low and by the last to transition high. Byte Read and Byte Write are controlled by using LCAS and UCAS separately. A Read cycle is performed by holding the WE signal high during RAS / CAS operation. A Write cycle is executed by holding the WE signal low during RAS / CAS operation; the input data is latched by the falling edge of WE or CAS , whichever occurs later. The data inputs and outputs are routed through 16 common I/O pins, with RAS , CAS , Power-On The initial application of the VCC supply requires a 200 µs wait followed by a minimum of any eight initialization cycles containing a RAS clock. During Power-On, the VCC current is dependent on the input levels of RAS and CAS . WE and OE controlling the in direction. EDO Page Mode operation all 1024(1K) columns within a selected row to be randomly accessed at a high data rate. A EDO Page Mode cycle is initiated with a row address latched by RAS followed by a column address latched by CAS . While holding RAS low, CAS can be toggled to strobe changing column addresses, thus achieving shorter cycle times. The A42U0616 offers an accelerated Fast Page Mode cycle through a feature called Extended Data Out, which PRELIMINARY (June, 2001, Version 0.0) It is recommended that RAS and CAS track with VCC or be held at a valid VIH during Power-On to avoid current surges. 2 AMIC Technology, Inc. A42U0616 Series Block Diagram Vcc RAS UCAS LCAS WE Control Clocks Refresh Timer Vss VBB Generator Lower Data in Buffer Row Decoder Refresh Counter A0~A9 A0~A9 Memory Array 1,048,576 x 16 Cells OE Upper Data in Buffer I/O8 to I/O15 Row Address Buffer Col. Address Buffer Recommended Operating Conditions Symbol Lower Data out Buffer Sense Amps & I/O Refresh control I/O0 to I/O7 Description Upper Data out Buffer Column Decoder (Ta = 0°C to +70°C) Min. Typ. Max. Unit 2.25 2.5 2.75 V VCC Power Supply VSS Input High Voltage 0 0 0 V VIH Input High Voltage 1.8 - VCC + 0.2 V VIL Input Low Voltage -1.0 - 0.8 V PRELIMINARY (June, 2001, Version 0.0) 3 AMIC Technology, Inc. A42U0616 Series Truth Table Function RAS UCAS LCAS Standby H X Read: Word L L Read: Lower Byte L Read: Upper Byte L Write: Word Write: Lower Byte Address I/Os Notes WE OE X X X X High-Z L H L Row/Col. Data Out H L H L Row/Col. I/O0-7 = Data Out I/O8-15 = High-Z L H H L Row/Col. I/O0-7 = High-Z I/O8-15 = Data Out L L L L H Row/Col. Data In L H L L H Row/Col. I/O0-7 = Data In I/O8-15 = X Write: Upper Byte L L H L H Row/Col. I/O0-7 = X I/O8-15 = Data In Read-Write L L L H→L L→H Row/Col. Data Out → Data In 1,2 EDO-Page-Mode Read: Hi-Z -First cycle -Subsequent Cycles L L H→L H→L H→L H→L H→L H H H→L Row/Col. Col. Data Out Data Out 2 2 EDO-Page-Mode Write -First cycle -Subsequent Cycles L L H→L H→L H→L H→L L L H H Row/Col. Col. Data In Data In 1 1 EDO-Page-Mode Read-Write -First cycle -Subsequent Cycles L L H→L H→L H→L L→H Data Out → Data In H→L H→L H→L L→H Row/Col. Col. Data Out → Data In 1, 2 1, 2 Hidden Refresh Read L→H→L L L H L Row/Col. Data Out 2 Hidden Refresh Write L→H→L L L L X Row/Col. Data In → High-Z 1 L H H X X Row High-Z CBR Refresh H→L L L X X X High-Z Self Refresh H→L L L H X X High-Z RAS -Only Refresh Note: 3 1. Byte Write may be executed with either UCAS or LCAS active. 2. Byte Read may be executed with either UCAS or LCAS active. 3. Only one CAS signal ( UCAS or LCAS ) must be active. PRELIMINARY (June, 2001, Version 0.0) 4 AMIC Technology, Inc. A42U0616 Series Absolute Maximum Ratings* *Comments Input Voltage (Vin) . . . . . . . . . . . . . . . -0.5V to VCC+0.5V Output Voltage (Vout) . . . . . . . . . . . . . -0.5V to VCC+0.5V Power Supply Voltage (VCC) . . . . . . . -0.5V to VCC+0.5V Operating Temperature (TOPR) . . . . . . . . . . 0°C to +70°C Storage Temperature (TSTG) . . . . . . . . . -55°C to +150°C Soldering Temperature X Time (TSOLDER) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C X 10sec Power Dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . . 1W Short Circuit Output Current (Iout) . . . . . . . . . . . . . . 50mA Latch-up Current . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of these specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics (VCC = 2.5V ± 10%, VSS = 0V, Ta = 0°C to +70°C) -50 Symbol -60 -80 Parameter Unit Min. Max. Min. Max. Min. Max. Test Conditions IIL Input Leakage Current -5 +5 -5 +5 -5 +5 µA 0V ≤ Vin ≤ Vin + 0.2V Pins not under Test = 0V IOL Output Leakage Current -5 +5 -5 +5 -5 +5 µA DOUT disabled, 0V ≤ Vout ≤ + VCC ICC1 Operating Power Supply Current - 120 - 110 - 100 mA RAS , UCAS , LCAS Address cycling; tRC = min. ICC2 TTL Standby Power Supply Current - 1 - 1 - 1 mA RAS = UCAS = LCAS =VIH ICC3 Average Power Supply Current, RAS Refresh Mode - 120 - 110 - 100 mA RAS cycling, ICC4 EDO Page Mode Average Power Supply Current - 100 - 90 - 80 mA RAS = VIL, UCAS , LCAS Address cycling; tPC = min. ICC5 CAS -before- RAS Refresh Power Supply Current - 110 - 100 - 90 mA RAS , UCAS , LCAS cycling; tRC = min. ICC6 CMOS Standby Power Supply Current - 0.2 - 0.2 - 0.2 mA RAS = UCAS = LCAS = VCC - 0.2V ICC7 Self Refresh Mode Current - 250 - 250 - 250 µA RAS = CAS ≤ VSS+0.2V All other input high levels are VCC-0.2V or input low levels are VSS +0.2V 2.0 - 2.0 - 2.0 - V IOUT = -2mA - 0.4 - 0.4 - 0.4 V IOUT = 2mA VOH Notes 1, 2 1 UCAS = LCAS = VIH, tRC = min. 1, 2 1 Output Voltage VOL PRELIMINARY (June, 2001, Version 0.0) 5 AMIC Technology, Inc. A42U0616 Series AC Characteristics (VCC = 2.5V ±10%, VSS = 0V, Ta = 0°C to +70°C) Test Conditions: Input timing reference level: VIH/VIL=1.8V/0.8V Output reference level: VOH/VOL=1.6V/0.8V Output Load: 1TTL gate + CL (100pF) Assumed tT=2ns Std Symbol -50 -60 -80 Unit Notes 50 ns 4, 5 - 16 ms 3 - 134 - ns 40 - 50 - ns 10K 60 10K 80 10K ns 7 10K 10 10K 15 10K ns RAS to CAS Delay Time 11 37 14 45 20 60 ns 6 tRAD RAS to Column Address Delay Time 9 25 12 30 15 40 ns 7 7 tRSH CAS to RAS Hold Time 7 - 10 - 10 - ns 8 tCSH CAS Hold Time 37 - 40 - 50 - ns 9 tCRP CAS to RAS Precharge Time 5 - 5 - 5 - ns 10 tASR Row Address Setup Time 0 - 0 - 0 - ns 11 tRAH Row Address Hold Time 7 - 10 - 10 - ns 12 tCLZ CAS to Output in Low Z 0 - 0 - 0 - ns 8 13 tRAC Access Time from RAS - 50 - 60 - 80 ns 6,7 14 tCAC Access Time from CAS - 13 - 15 - 20 ns 6, 12 15 tAA Access Time from Column Address - 25 - 30 - 40 ns 7, 12 16 tAR Column Address Hold Time from RAS 44 - 55 - 70 - ns 17 tRCS Read Command Setup Time 0 - 0 - 0 - ns 18 tRCH Read Command Hold Time 0 - 0 - 0 - ns 9 19 tRRH Read Command Hold Time Reference to RAS 0 - 0 - 0 - ns 9 # Parameter Min. Max. Min. Max. Min. Max. Transition Time (Rise and Fall) 1 50 1 50 1 tREF Refresh Period - 16 - 16 1 tRC Random Read or Write Cycle Time 84 - 104 2 tRP RAS Precharge Time 30 - 3 tRAS RAS Pulse Width 50 4 tCAS CAS Pulse Width 5 tRCD 6 tT PRELIMINARY (June, 2001, Version 0.0) 6 AMIC Technology, Inc. A42U0616 Series AC Characteristics (continued) (VCC = 2.5V ±10%, VSS = 0V, Ta = 0°C to +70°C) Test Conditions: Input timing reference level: VIH/VIL=1.8V/0.8V Output reference level: VOH/VOL=1.6V/0.8V Output Load: 1TTL gate + CL (100pF) Assumed tT=2ns # Std Symbol -50 -60 -80 Unit Parameter Min. Max. Min. Max. Min. Max. Notes 20 tRAL Column Address to RAS Lead Time 25 - 30 - 40 - ns 21 tCOH Output Hold After CAS Low 5 - 5 - 3 - ns 22 tODS Output Disable Setup Time 0 - 0 - 0 - ns 23 tOFF Output Buffer Turn-Off Delay Time 0 13 0 15 0 20 ns 24 tASC Column Address Setup Time 0 - 0 - 0 - ns 25 tCAH Column Address Hold Time 7 - 10 - 10 - ns 26 tOES OE Low to CAS High Set Up 5 - 5 - 10 - ns 27 tWCS Write Command Setup Time 0 - 0 - 0 - ns 11 28 tWCH Write Command Hold Time 7 - 10 - 10 - ns 11 29 tWCR Write Command Hold Time to RAS 44 - 55 - 70 - ns 30 tWP Write Command Pulse Width 7 - 10 - 10 - ns 31 tRWL Write Command to RAS Lead Time 13 - 15 - 20 - ns 32 tCWL Write Command to CAS Lead Time 7 - 10 - 10 - ns 33 tDS Data-in setup Time 0 - 0 - 0 - ns 34 tDH Data-in Hold Time 7 - 10 - 15 - ns 35 tDHR Data-in Hold Time to RAS 44 - 55 - 70 - ns 36 tRWC Read-Modify-Write Cycle Time 110 - 135 - 180 - ns 37 tRWD RAS to WE Delay Time (Read-ModifyWrite) 67 - 79 - 107 - ns 11 38 tCWD CAS to WE Delay Time (Read-ModifyWrite) 30 - 34 - 47 - ns 11 39 tAWD 42 - 49 - 67 - ns 11 Column Address to WE Delay Time 8, 10 (Read-Modify-Write) PRELIMINARY (June, 2001, Version 0.0) 7 AMIC Technology, Inc. A42U0616 Series AC Characteristics (continued) (VCC = 2.5V ± 10%, VSS = 0V, Ta = 0°C to +70°C) Test Conditions: Input timing reference level: VIH/VIL=1.8V/0.8V Output reference level: VOH/VOL=1.6V/0.8V Output Load: 1TTL gate + CL (100pF) Assumed tT=2ns # Std Symbol -50 -60 -80 Parameter Unit Min. Max. Min. Max. Min. Max. Notes 40 tOEH OE Hold Time from WE 7 - 10 - 20 - ns 41 tOEP OE High Pulse Width 2 - 2 - 5 - ns 42 tPC Read or Write Cycle Time (EDO Page) 20 - 25 - 35 - ns 13 43 tCPA - 28 - 33 - 45 ns 12 Access Time from CAS Precharge (EDO Page) 44 tCP CAS Precharge Time (EDO Page) 7 - 10 - 10 - ns 45 tPCM EDO Page Mode RMW Cycle Time 58 - 68 - 80 - ns 46 tCRW EDO Page Mode CAS Pulse Width (RMW) 34 - 38 - 42 - ns 47 tRASP RAS Pulse Width 50 100K 60 100K 80 100K ns 48 tCSR CAS Setup Time ( CAS -before- RAS ) 5 - 5 - 5 - ns 3 49 tCHR CAS Hold Time 10 - 10 - 15 - ns 3 50 tRPC 5 - 5 - 5 - ns (EDO Page) ( CAS -before- RAS ) RAS to CAS Precharge Time ( CAS -before- RAS ) 51 tROH RAS Hold Time Reference to OE 5 - 5 - 5 - ns 52 tOEA OE Access Time - 13 - 15 - 20 ns 53 tOED OE to Data Delay 13 - 15 - 20 - ns 54 tOEZ Output Buffer Turn-off Delay from OE 0 13 0 15 0 20 ns 55 tRASS RAS pulse width ( C -B- R self-refresh) 100 - 100 - 100 - µs 56 tRPS 84 - 104 - 134 - ns - 50 - 50 - 50 ns RAS precharge time 8 ( C -B- R self-refresh) 57 tCHS PRELIMINARY CAS hold time ( C -B- R self-refresh) (June, 2001, Version 0.0) 8 AMIC Technology, Inc. A42U0616 Series Notes: 1. ICC1, ICC3, ICC4, and ICC5 depend on cycle rate. 2. ICC1 and ICC4 depend on output loading. Specified values are obtained with the outputs open. 3. An initial pause of 200µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal refresh counter, a minimum of 8 CAS -before- RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after extended periods of bias without clocks. 4. AC Characteristics assume tT = 2ns. All AC parameters are measured with a load equivalent to one TTL load and 100pF, VIL (min.) ≥ GND and VIH (max.) ≤ VCC. 5. VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are measured between VIH and VIL. 6. Operation within the tRCD (max.) limit insures that tRAC (max.) can be met. tRCD (max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled exclusively by tCAC. 7. Operation within the tRAD (max.) limit insures that tRAC (max.) can be met. tRAD (max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled exclusively by tAA. 8. Assumes three state test load (5pF and a 500Ω Thevenin equivalent). 9. Either tRCH or tRRH must be satisfied for a read cycle. 10. tOFF (max.) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels. 11. tWCS, tWCH, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (min.) and tWCH ≥ tWCH (min.), the cycle is an early write cycle and data-out pins will remain open circuit, high impedance, throughout the entire cycle. If tRWD ≥ tRWD (min.) , tCWD ≥ tCWD (min.) and tAWD ≥ tAWD (min.), the cycle is a read-modify-write cycle and the data out will contain data read from the selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate. 12. Access time is determined by the longer of tAA or tCAC or tCPA. 13. tASC ≥ tCP to achieve tPC (min.) and tCPA (max.) values. PRELIMINARY (June, 2001, Version 0.0) 9 AMIC Technology, Inc. A42U0616 Series Word Read Cycle tRC(1) tRAS(3) tRP(2) RAS tCSH(8) tCRP(9) tRCD(5) tRSH(7) tCRP(9) tCAS(4) UCAS LCAS tRAD(6) tASR(10) Address tRAL(20) tRAH(11) tASC(24) Row Address tCAH(25) Column Address tAR(16) tRCH(18) tRCS(17) tRRH(19) WE tROH(51) tOEA(52) OE tCAC(14) tAA(15) tRAC(13) I/O 0 ~ I/O 15 tOFF(23) tOEZ(54) High-Z Valid Data-out tCLZ(12) : High or Low PRELIMINARY (June, 2001, Version 0.0) 10 AMIC Technology, Inc. A42U0616 Series Word Write Cycle (Early Write) tRC(1) tRAS(3) tRP(2) RAS tCSH(8) tCRP(9) tRCD(5) tRSH(7) UCAS tCRP(9) tCAS(4) LCAS tAR(16) tRAD(6) tASR(10) tRAL(20) tRAH(11) tCAH(25) tASC(24) Address Row Address Column Address tWCR(29) tCWL(32) tRWL(31) tWP(30) WE tWCS(27) tWCH(28) OE tDHR(35) tDS(33) I/O 0 ~ I/O 15 tDH(34) Valid Data-in : High or Low PRELIMINARY (June, 2001, Version 0.0) 11 AMIC Technology, Inc. A42U0616 Series Word Write Cycle (Late Write) tRC(1) tRAS(3) tRP(2) RAS tCSH(8) tCRP(9) tRCD(5) tRSH(7) UCAS tCRP(9) tCAS(4) LCAS tAR(16) tRAD(6) tASR(10) tRAL(20) tRAH(11) tCAH(25) tASC(24) Address Row Address Column Address tCWL(32) tRWL(31) tWCR(29) tWP(30) WE tOEH(40) tOED(53) OE tDHR(35) tDS(33) I/O 0 ~ I/O 15 tDH(34) High-Z Vaild Data-in : High or Low PRELIMINARY (June, 2001, Version 0.0) 12 AMIC Technology, Inc. A42U0616 Series Word Read-Modify-Write Cycle tRWC(36) tRAS(3) tRP(2) RAS tCSH(8) tCRP(9) tRCD(5) tRSH(7) UCAS tCRP(9) tCAS(4) LCAS tAR(16) tRAD(6) tASR(10) Address tRAH(11) tASC(24) Row Address tCAH(25) Column Address tAWD(39) tCWL(32) tCWD38) tRCS(17) tRWD(37) tRWL(31) WE tWP(30) tOED(53) tOEA(52) tOEZ(54) OE tOEH(40) tCAC(14) tAA(15) tDS(33) tDH(34) tRAC(13) I/O 0 ~ I/O 15 High-Z Data-out Data-in tCLZ(12) : High or Low PRELIMINARY (June, 2001, Version 0.0) 13 AMIC Technology, Inc. A42U0616 Series EDO Page Mode Word Read Cycle tRASP(47) tRP(2) RAS tCSH(8) tCRP(9) tPC(42) tRSH(7) tCRP(9) tRCD(5) tCP(44) tCAS(4) tCAS(4) tCAS(4) UCAS LCAS tCSH(8) tAR(16) tASR(10) Address tRAD(6) tRAH(11) tRAL(20) tCAH(25) tCAH(25) tASC(24) tASC(24) Row Column Column tCAH(25) Column tRCS(17) tRCS(17) tRCH(25) tRCH(25) tRCS(17) WE tAA(15) tAA(15) tRRH(19) tCPA(43) tOEA(52) tOEA(52) tOES(26) OE tCAC(14) tRAC(13) tCAC(14) tOEP(41) tCOH(21) tCLZ(12) I/O 0 ~ I/O 15 Data-out tOFF(23) tCAC(14) tOEZ(54) tOEZ(54) Data-out Data-out tCLZ(12) : High or Low PRELIMINARY (June, 2001, Version 0.0) 14 AMIC Technology, Inc. A42U0616 Series EDO Page Mode Early Word Write Cycle tRASP(47) tRP(2) RAS tCSH(8) tCRP(9) tPC(42) tRSH(7) tCRP(9) tRCD(5) tCAS(4) tCP(44) tCAS(4) tCP(44) tCAS(4) UCAS LCAS tRAL(20) tRAD(6) tCAH(25) tASR(10) tRAH(11) tASC(24) Address tCAH(25) tASC(24) Row tCAH(25) tASC(24) Column Column tCWL(32) tCWL(32) Column tCWL(32) tRWL(31) tWCS(27) tWCS(27) tWCS(27) tWCH(28) tWCH(28) tWCH(28) WE tWP(30) tWP(30) tWP(30) OE tDH(34) tDS(33) I/O 0 ~ I/O 15 tDH(34) tDS(33) Data-in tDH(34) tDS(33) Data-in Data-in : High or Low PRELIMINARY (June, 2001, Version 0.0) 15 AMIC Technology, Inc. A42U0616 Series EDO Page Mode Word Read-Modify-Write Cycle tRP(2) tRASP(47) RAS tCSH(8) tCRP(9) tPCM(45) tRSH(7) tCRP(9) tRCD(5) tCAS(4) tCP(44) tCP(44) tCAS(4) tCAS(4) UCAS LCAS tRAL(20) tRAD(6) tASR(10) tCAH(25) tRAH(11) Address Row tCAH(25) tCAH(25) tASC(24) tASC(24) Column tASC(24) Column Column tCWL(32) tCWL(32) tCWL(32) tRWD(37) tRWL(31) tRCS(17) tCWD(38) tCWD(38) tCWD(38) WE tWP(30) tAWD(39) tWP(30) tAWD(39) tWP(30) tAWD(39) tROH(51) tOEA(52) tOEA(52) tOEA(52) OE tOEH(40) tOED(53) tCAC(14) tOED(53) tCPA(43) tAA(15) tAA(15) tOEZ(54) tOEZ(54) tOEZ(54) tDH(34) tDH(34) tDS(33) tDS(33) tDS(33) I/O 0 ~ I/O 15 tAA(15) tDH(34) tRAC(13) tOED(53) tCPA(43) High-Z tCLZ(12) tCLZ(12) tCLZ(12) Data-in Data-out Data-in Data-out Data-in Data-out : High or Low PRELIMINARY (June, 2001, Version 0.0) 16 AMIC Technology, Inc. A42U0616 Series RAS Only Refresh Cycle tRC(1) tRAS(3) tRP(2) RAS tRPC(50) tCRP(9) UCAS LCAS tASR(10) tRAH(11) Row Address Note: WE, OE = Don't care. : High or Low CAS Before RAS Refresh Cycle tRC(1) tRP(2) tRAS(3) tRP(2) RAS tRPC(50) tCHR(49) tCSR(48) tPC(42) UCAS LCAS tOFF(23) High-Z I/O 0 ~ I/O 15 Note: WE, OE, Address = Don't care. PRELIMINARY (June, 2001, Version 0.0) : High or Low 17 AMIC Technology, Inc. A42U0616 Series Hidden Refresh Cycle (Word Read) tRC(1) tRC(1) tRAS(3) tRP(2) tRAS(3) tRP(2) RAS tAR(16) tCRP(9) tRSH(7) tRCD(5) tCHR(49) tCRP(9) UCAS LCAS tRAD(6) tASR(10) tRAL(20) tCAH(25) tRAH(11) tASC(24) Address Row Column tRCS(17) tRRH(19) WE tAA(15) OE tCAC(14) tOFF(23) tCLZ(12) tRAC(13) I/O 0 ~ I/O 15 High-Z Valid Data-out : High or Low PRELIMINARY (June, 2001, Version 0.0) 18 AMIC Technology, Inc. A42U0616 Series Hidden Refresh Cycle (Early Word Write) tRC(1) tRC(1) tRAS(3) tRP(2) tRAS(3) tRP(2) RAS tAR(16) tCRP(9) tRSH(7) tRCD(5) tCHR(49) tCRP(9) UCAS LCAS tRAD(6) tASR(10) tRAH(11) tRAL(20) tCAH(25) tASC(24) Address Row Column tWCS(27) tWCH(28) tWP(30) WE OE tDS(33) I/O 0 ~ I/O 15 tDH(34) Valid Data-in : High or Low PRELIMINARY (June, 2001, Version 0.0) 19 AMIC Technology, Inc. A42U0616 Series EDO Page Mode Read-Early-Write Cycle (Pseudo Read-Modify-Write) tRP(2) tRASP(47) RAS tCSH(8) tPC(42) tRCD(5) tCRP(9) tCAS(4) tPC(42) tCP(44) tCAS(4) tRSH(7) tCP(44) tCAS(4) tCPR(9) UCAS LCAS tRAD(6) tRAL(20) tRAD(6) tASR(10) Address tASC(24) tRAH(11) tASC(24) Row tCAH(25) tASC(24) tCAH(25) Column Column tCAH(25) Column tRCH(18) tRCS(17) tWCS(27) WE tWCH(28) tAA(15) tAA(15) tCAP(43) tDS(33) tDH(34) tRAC(13) tCAC(14) tCAC(14) tOEA(52) OE tCOH(21) I/O 0 ~ I/O 15 Data-out Data-out Data-in : High or Low PRELIMINARY (June, 2001, Version 0.0) 20 AMIC Technology, Inc. A42U0616 Series Self Refresh Mode tRP(2) tRASS(55) tRPS(56) RAS tCHS(57) tCSR(48) tRPC(50) tCRP(9) UCAS LCAS tCPN(42) tASR(10) ROW A0 ~ A7 COL tOFF(23) High-Z I/O 0 ~ I/O 15 : High or Low Note: WE, OE = Don't care. n Self Refresh Mode. a. Entering the Self Refresh Mode: The A42U0616 Self Refresh Mode is entered by using CAS before RAS cycle and holding RAS and CAS signal "low" longer than 100µs. b. Continuing the Self Refresh Mode: The Self Refresh Mode is continued by holding RAS "low" after entering the Self Refresh Mode. It does not depend on CAS being "high" or "low" after entering the Self Refresh Mode continue the Self Refresh Mode. c. Exiting the Self Refresh Mode: The A42U0616 exits the Self Refresh Mode when the RAS signal is brought "high". PRELIMINARY (June, 2001, Version 0.0) 21 AMIC Technology, Inc. A42U0616 Series Capacitance (Ta = Room Temperature, VCC = 2.5V ± 10%) Symbol Signals CIN1 A0 – A9 CIN2 RAS , CAS , WE Parameter Max. Unit Test Conditions 5 pF Vin = 0V Input Capacitance 7 pF Vin = 0V I/O Capacitance 10 pF Vin = Vout = 0V , OE CI/O I/O0 - I/O15 Ordering Codes Package\ RAS Access Time 50ns 60ns 80ns Refresh Cycle SelfRefresh 42L SOJ (400mil) A42U0616S-50 A42U0616S-60 A42U0616S-80 1K Yes 50(44)L TSOP type II (400mil) A42U0616V-50 A42U0616V-60 A42U0616V-80 1K Yes PRELIMINARY (June, 2001, Version 0.0) 22 AMIC Technology, Inc. A42U0616 Series Package Information unit: inches/mm 22 1 21 E 42 HE SOJ 42L Outline Dimensions L A2 A C D A1 e D b b1 S Seating Plane e1 y θ Dimensions in inches Symbol Dimensions in mm Min Nom Max Min Nom Max A 0.128 0.138 0.148 3.25 3.51 3.76 A1 0.025 - - 0.64 - - A2 0.105 0.110 0.115 2.67 2.79 2.92 b1 0.026 0.028 0.032 0.66 0.71 0.81 b 0.015 0.018 0.020 0.38 0.46 0.51 C 0.007 0.008 0.013 0.18 0.20 0.33 D 1.075 1.080 1.085 27.31 27.43 27.56 E 0.395 0.400 0.405 10.03 10.16 10.29 e - 0.050 - - 1.27 - e1 - 0.370 - - 9.4 - HE 0.435 0.440 0.445 11.05 11.18 11.30 L 0.082 - - 2.08 - - S - - 0.045 - - 1.14 y - - 0.003 - - 0.075 θ 0° - 10° 0° - 10° Notes: 1. The maximum value of dimension D includes end flash. 2. Dimension E does not include resin fins. 3. Dimension e1 is for PC Board surface mount pad pitch design reference only. 4. Dimension S includes end flash. PRELIMINARY (June, 2001, Version 0.0) 23 AMIC Technology, Inc. A42U0616 Series Package Information TSOP 50/44L (Type II) Outline Dimensions unit: inches/mm 50 26 Detail "A" HE E RAD R θ RAD R1 L L1 1 25 D B e D S A A1 A2 c Detail "A" y Seating Plane Dimensions in inches Dimensions in mm Symbol Min Nom Max Min Nom Max A - - 0.048 - - 1.20 A1 0.002 - 0.006 0.05 - 0.15 A2 0.037 0.039 0.042 0.95 1.00 1.05 B 0.012 - 0.018 0.30 - 0.45 c 0.005 - 0.008 0.12 - 0.21 D 0.820 0.825 0.830 20.82 20.95 21.08 E 0.400 BSC 10.16 BSC HE 0.463 BSC 11.76 BSC L 0.016 0.020 0.024 0.40 0.50 L1 0.031 REF 0.80 REF e 0.031 BSC 0.80 BSC 0.60 R 0.005 - 0.010 0.12 - 0.25 R1 0.005 - - 0.12 - - 5° 0° S θ 0.0435 REF 0° - 0.875 BSC - 5° Notes: 1. The maximum value of dimension D includes end flash. 2. Dimension E does not include resin fins. 3. Dimension S includes end flash. PRELIMINARY (June, 2001, Version 0.0) 24 AMIC Technology, Inc.