ANALOGICTECH AHK6030LXINY-T1

AHK6030LX
30V N-Channel Power MOSFET
General Description
Features
Utilizing
Analogic
Tech’s
state-of-the-art
TrenchDMOSâ process, the AHK6030LX sets a
new standard in current handling capability and
efficiency for surface mount power MOSFETs.
•=
•=
•=
•=
•=
Gate charge and RDS(ON) have been optimized and
package inductance minimized to provide high
efficiency for DC-DC.
PWMSwitch
VDS(MAX) = 30V
ID(MAX)(a) = 52 A @ 25°C
IAPP(MAX) = 20A in typical computer application
Low Gate Charge
Low RDS(ON):
10.5 mΩ=(max), 9.5 mΩ=(typ)@VGS = 10V
18 mΩ= (max), 14 mΩ=(typ)@ VGS = 4.5V
DPAK-L Package
Applications
DPAK Package
Drain-Connected Tab
Drain-Connected Tab
G
S
G
S
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Description
VDS
VGS
ID
IDM
IS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C (a)
Pulsed Drain Current (a)
Continuous Source Current (Source-Drain Diode) (a)
PD
Maximum Power Dissipation (a)
TJ, TSTG
Value
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Units
30
±20
±52
±56
23
42
27
-55 to 150
°C
96
3.6
°C/W
°C/W
V
A
W
Thermal Resistance
RθJA
RθJC
Maximum Junction-to-Ambient (a)
Maximum Junction-to-Case(a)
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
9-19
6030LX.2001.05.0.91
Preliminary Information
•= DC-DC converters for CPU’s
•= High Current Load Switch
TM
AHK6030LX
30V N-Channel Power MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Description
Conditions
Min
VGS=0V, ID=250µA
30
Typ
Max
Units
DC Characteristics
BVDS
Drain-Source Breakdown
Voltage
RDS(ON)
Drain-Source ON-Resistance
ID(ON)
VGS(th)
IGSS
On-State Drain Current
Gate Threshold Voltage
Gate-Body Leakage Current
IDSS
Drain Source Leakage Current
gfs
Forward Transconductance
VGS=10V, ID=10A
VGS=4.5V, ID=5A
VGS=10V ,VDS=5V (Pulsed)
VGS=VDS, ID=250µA
VGS=±20V, VDS=0V
VGS=0V,VDS=30V
VGS=0V,VDS=30V, TA=70°C
VDS=15V, ID=10A
V
9.5
14
10.5
18
56
1.0
±100
1
25
19
mΩ
A
V
nA
µA
S
Dynamic Characteristics
QG
QGS
QGD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
Turn-ON Delay
tR
Turn-ON Rise Time
tD(OFF)
Turn-OFF Delay
tF
Turn-OFF Fall Time
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage
IS
Continuous Diode Current
VDS=15V, ID=15A, VGS=10V
VDD=15V, VGS=10V, ID=15A,
RG=6Ω
VGS=0, IS=28A
45
9
7.5
17
11
60
45
1
65
30
20
100
80
nC
nC
nC
ns
ns
ns
ns
1.5
23
V
A
Notes:
(a)
Based on thermal dissipation from junction to case. RθJC + RθCA = RθJA where the case thermal reference is defined as
the solder mounting surface of the drain pins. RθJC is guaranteed by design, however RθCA is determined by the PCB
design. Package current is limited to 28A DC.
(b)
With minimum copper pads on 1 x 1 inch FR4 board.
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
6030LX.2001.05.0.91
AHK6030LX
30V N-Channel Power MOSFET
Typical Characteristics
Transfer Characteristics
Output Characteristics
60.00
10V
6V
60
VD=VG
4.5V
5V
50
45.00
ID (A)
IDS (V)
40
4V
30.00
20
3.5V
15.00
30
10
3V
0.00
0.00
0
1.00
2.00
3.00
4.00
0
5.00
1
2
Normalized On-Resistance vs.
Drain Current
4
5
On-Resistance vs. Gate to
Source Voltage
40
3
VGS=3.5V
2.5
10A
VGS=4.0V
VGS=4.5V
2
1.5
1
VGS=5V
20A
30
RDS(ON) (mΩ)
Normalized RDS(ON)
3
VGS (V)
VDS (V)
VGS=6V
30A
20
10
0.5
VGS=10V
0
0
0.00
10.00
20.00
30.00
0
40.00
2
4
6
8
10
VGS (V)
ID (A)
Gate Charge
Source-Drain Diode Forward Voltage
10
100
VD=15V
8
10
IS (A)
VGS (V)
RD=1.2Ω
6
4
1
2
0
0
10
20
30
40
50
0.1
0.4
0.6
Qg, Charge (nC)
0.8
1
1.2
VSD (V)
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
6030LX.2001.05.0.91
AHK6030LX
30V N-Channel Power MOSFET
Ordering Information
Package
Marking
TO-252 (DPAK)
6030LX
Part Number
Bulk
MPQ
Tape and Reel
MPQ
N/A
N/A
AHK6030LXINY-T1
2100
Package Information
TO-252 (DPAK)
6.5
C0.5
(2X)
5.7
2.3
5.5
7.2
93
”
0.5
4.6
0.6
(3X)
0.5
(0.9)
0.7
”
97
2.5
0~0.2
1.4
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
6030LX.2001.04.0.9