AAT7103 25V N-Channel Power MOSFET General Description Features The AAT7103 25V N-Channel Power MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, the product demonstrates high power handling and small size. • • • Applications Dual SOP-8 Package Battery Packs Cellular & Cordless Telephones PDAs, Camcorders, and Cell Phones Absolute Maximum Ratings Symbol VDS VGS Top View Description D1 D2 D2 8 7 6 5 1 S1 2 G1 3 S2 4 G2 Value Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 70°C Continuous Drain Current @ TJ=150°C IDM IS Pulsed Drain Current 3 Continuous Source Current (Source-Drain Diode) 1 TA = 25°C Maximum Power Dissipation 1 TA = 70°C Operating Junction and Storage Temperature Range TJ, TSTG D1 (TA=25°C unless otherwise noted) ID PD Preliminary Information • • • VDS(MAX) = 25V ID(MAX)(1) = 6.8 A @ 25°C Low RDS(ON): • 26 mΩ @VGS = 4.5V • 41 mΩ @VGS = 2.5V 1 Units 25 ±12 ±6.8 ±5.4 ±24 1.8 2.0 1.25 -55 to 150 °C Value Units 100 62.5 35 °C/W °C/W °C/W V A W Thermal Characteristics Symbol RθJA RθJA2 RθJF 7103.2003.04.0.61 Description Typical Junction-to-Ambient steady state, one FET on Maximum Junction-to-Ambient Figure, t < 10 sec. 1 Typical Junction-to-Foot, one FET on 1 2 1 AAT7103 25V N-Channel Power MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Description Conditions DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) I D(ON) VGS(th) IGSS IDSS Drain-Source ON-Resistance 3 On-State Drain Current 3 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage Current gfs Forward Transconductance 3 Dynamic Characteristics 4 QG Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 1 VGS=0V, ID=250µA VGS=4.5V, ID=6.8A VGS=2.5V, ID=5.4A VGS=4.5V ,VDS=5V (Pulsed) VGS=VDS, ID=250µA VGS= ±12V, VDS=0V VGS=0V, VDS=25V VGS=0V, VDS=20V, TJ=70°C VDS=5V, ID=6.8A VDS=15V, RD=2.2Ω, VGS=4.5V VDS=15V, RD=2.2Ω, VGS=4.5V VDS=15V, RD=2.2Ω, VGS=4.5V VDD=15V, VGS=10V, RD=2.2Ω, RG=6Ω VDD=15V, VGS=10V, RD=2.2Ω, RG=6Ω VDD=15V, VGS=10V, RD=2.2Ω, RG=6Ω VDD=15V, VGS=10V, RD=2.2Ω, RG=6Ω 3 VGS=0, IS=6.8A Min Typ Max 25 Units V 19 28 26 41 24 0.6 ±100 1 5 20 13 1.9 2.9 15 18 36 27 mΩ A V nA µA S 19 nC ns 1.5 1.8 V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout. A 10 second pulse on a 1” x 1” PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device’s leads. RθJF is guaranteed by design; however, RθFA is determined by PCB design. Actual maximum continuous current is limited by the application’s design. Note 2: Steady state thermal response while mounted on a 1” x 1” PCB with maximum copper area is provided for comparison with other devices. This test condition approximates many battery pack applications. Note 3: Pulsed measurement 300 µs, single pulse. Note 4: Guaranteed by design. Not subject to production testing. 2 7103.2003.04.0.61 AAT7103 25V N-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Transfer Characteristics Output Characteristics 32 4V 3.5V 3V 5V 4.5V 24 32 VD=VG 25°C 24 -55°C ID (A) IDS (A) 2.5V 2V 16 125°C 16 8 8 1.5V 0 0 0 0.5 1 1.5 2 2.5 0 3 1 2 4 3 VGS (V) VDS (V) On-Resistance vs. Drain Current On-Resistance vs. Gate to Source Voltage 60 60 50 50 40 VGS = 2.5 V RDS(ON) (mΩ) RDS(ON) (mΩ) ID = 5.5A 30 20 VGS = 4.5 V 10 40 30 20 10 0 0 8 16 24 0 32 0 3 4 5 Gate Charge Source-Drain Diode Forward Voltage 100 VD=15V ID=5.5A 10 3 TJ = 150°C IS (A) VGS (V) 2 VGS (V) 5 4 1 ID (A) 2 TJ = 25°C 1 1 0.1 0 0 2 4 6 8 10 QG, Charge (nC) 7103.2003.04.0.61 12 14 16 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) 3 AAT7103 25V N-Channel Power MOSFET Ordering Information Package Marking Part Number (Tape and Reel) SOP-8 7103 AAT7103IAS-T1 Note: Sample stock is generally held on all part numbers listed in BOLD. 6.00 ± 0.20 3.90 ± 0.10 Package Information 4.90 ± 0.10 0.42 ± 0.09 × 8 1.27 BSC 45° 4° ± 4° 0.175 ± 0.075 1.55 ± 0.20 0.375 ± 0.125 0.235 ± 0.045 0.825 ± 0.445 All dimensions in millimeters. AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 4 7103.2003.04.0.61