SGM3055
15A, 30V,RDS(ON) 100mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-89
Description
The SOT-89 package is universally preferred for all
commercial industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
D
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
S
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
o
Ratings
Unit
30
V
±20
V
Continuous Drain Current, VGS@10V
ID@TA=25 C
15
A
Continuous Drain Current, VGS@10V
o
9
A
50
A
ID@TA=100 C
1
Pulsed Drain Current
IDM
o
PD@TA=25 C
Total Power Dissipation
Tj, Tstg
Operating Junction and Storage Temperature Range
15
W
o
-55~+150
C
Thermal Data
Parameter
Symbol
Ratings
Thermal Resistance Junction-ambient
Max.
Rthj-a
42
Thermal Resistance Junction-case
Max.
Rthj-c
3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 6
SGM3055
15A, 30V,RDS(ON) 100mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
Max.
Unit
BVDSS
30
_
_
V
BVDS/ Tj
_
0.037
_
V/ C
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=± 20V
_
_
25
uA
VDS=30V,VGS=0
_
_
250
uA
VDS=24V,VGS=0
_
_
80
o
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=150 oC)
Static Drain-Source On-Resistance
IDSS
RDS(ON)
_
_
_
Gate-Source Charge
Qgs
_
1.3
Gate-Drain ("Miller") Charge
Qgd
_
3.6
_
3.6
_
19.8
_
2
Turn-on Delay Time
Td(ON)
Rise Time
Tr
Turn-off Delay Time
Fall Time
Input Capacitance
_
_
5.4
Td(Off)
_
Tf
_
3.2
_
260
Ciss
_
o
Reference to 25 C, ID=1mA
VGS=10V, ID= 8A
VGS=4.5V, ID=6A
_
_
VGS=0V, ID=250uA
nC
ID=8A
VDS=24V
VGS= 5V
VDS=15V
ID=8A
nS
VGS=10V
RG=3.4Ω
RD=1.9 Ω
_
_
VGS=0V
VDS=25V
144
_
_
13
_
Min.
Typ.
Max.
Unit
VS D
_
_
1.3
V
IS=15A,VGS=0V,Tj=25 C
IS
_
_
15
A
VD=VG=0V,VS=1.3V
_
_
50
A
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
13
mΩ
100
Qg
2
Total Gate Charge
o
Test Condition
pF
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
Symbol
2
Continuous Source Current(Body Diode)
1
Pulsed Source Current(Body Diode)
ISM
Test Condition
o
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 6
SGM3055
Elektronische Bauelemente
15A, 30V,RDS(ON) 100mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 6
SGM3055
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
15A, 30V,RDS(ON) 100mΩ
N-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 4 of 6
SGM3055
Elektronische Bauelemente
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
15A, 30V,RDS(ON) 100mΩ
N-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 5 of 6
SGM3055
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
15A, 30V,RDS(ON) 100mΩ
N-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 6 of 6