AAT9460 30V N-Channel Power MOSFET General Description Features The AAT9460 is a low threshold MOSFET designed for applications in DC-DC Converter, battery, cell phone, and PDA markets. Using AnalogicTech™'s ultra-high density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size. • • • Top View DC-DC Converters Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment D 3 1 G Absolute Maximum Ratings Symbol VDS VGS 2 S (TA=25°C unless otherwise noted) Description Value Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 70°C ID Continuous Drain Current @ TJ=150°C IDM IS Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) PD Maximum Power Dissipation TJ, TSTG Preliminary Information SC59 Package Applications • • • • VDS(MAX) = 30V ID(MAX) 1 = 3.4A @ 25°C Low RDS(ON): • 58 mΩ @ VGS = 4.5V • 84 mΩ @ VGS = 2.5V 1 1 TA = 25°C TA = 70°C 1 Operating Junction and Storage Temperature Range Units 30 ±12 ±3.4 ±2.7 ±8.0 1.0 1.1 0.7 -55 to 150 °C Value Units 140 115 45 °C/W V A W Thermal Characteristics Symbol RθJA RθJA2 RθJF 9460.2003.10.0.63 Description Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<5 seconds Typical Junction-to-Foot 1 1 1 1 AAT9460 30V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C unless otherwise noted) Conditions DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA VGS=-4.5V, ID=3.4A RDS(ON) Drain-Source ON-Resistance 2 VGS=-2.5V, ID=2.8A ID(ON) On-State Drain Current 2 VGS=4.5V, VDS=5V (Pulsed) VGS(th) Gate Threshold Voltage VGS=VDS, ID=-250µA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V VGS=0V, VDS=30V IDSS Drain Source Leakage Current VGS=0V, VDS=24V, TJ=70°C 3 gfs Forward Transconductance 2 VDS=-5V, ID=3.4A 3 Dynamic Characteristics QG Total Gate Charge VDS=15V, RD=4.2Ω, VGS=4.5V QGS Gate-Source Charge VDS=15V, RD=4.2Ω, VGS=4.5V QGD Gate-Drain Charge VDS=15V, RD=4.2Ω, VGS=4.5V tD(ON) Turn-ON Delay VDS=15V, RD=4.2Ω, VGS=4.5V, tR Turn-ON Rise Time VDS=15V, RD=4.2Ω, VGS=4.5V, tD(OFF) Turn-OFF Delay VDS=15V, RD=4.2Ω, VGS=4.5V, tF Turn-OFF Fall Time VDS=15V, RD=4.2Ω, VGS=4.5V, Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=3.4A IS Continuous Diode Current 1 Min Typ Max 30 V 46 65 58 84 8 0.6 ±100 1 5 9 RG=6Ω RG=6Ω RG=6Ω RG=6Ω Units mΩ A V nA µA S 5 0.9 1 6 3 30 8 nC ns 1.3 1.0 V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout. A 5 second pulse on a 1” x 1” PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device’s leads. RθJF is guaranteed by design; however, RθFA is determined by PCB design. Actual maximum continuous current is limited by the application’s design. Note 2: Pulse test: Pulse width = 300 µs. Note 3: Guaranteed by design. Not subject to production testing. 2 9460.2003.10.0.63 AAT9460 30V N-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Transfer Characteristics Output Characteristics 8 3.5V 3V 2.5V 5V 4.5V VD=VG 6 2V ID (A) IDS (A) 6 8 4 4 125°C 2 25°C 2 1.5V 0 0 0 0 0.5 -55°C 1 1.5 0.5 1 2 1.5 2 2.5 3 VGS (V) VDS (V) On-Resistance vs. Drain Current On-Resistance vs. Gate to Source Voltage 120 120 80 RDS(ON) (mΩ Ω) 100 RDS(ON) (mΩ Ω) ID = 3.6A 100 VGS = 2.5V 60 40 VGS = 4.5V 80 60 40 20 20 0 0 0 2 4 6 0 8 1 2 ID (A) On-Resistance vs. Junction Temperature 1.4 0.3 VGS = 4.5V ID = 3.6A 0.2 1.2 1 0.8 0.6 -50 -25 0 25 50 TJ (ºC) 9460.2003.10.0.63 4 5 Threshold Voltage VGS(th) Variance (V) Normalized RDS(ON) 1.6 3 VGS (V) 75 100 125 150 ID = 250µA 0.1 0 -0.1 -0.2 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 TJ (°C) 3 AAT9460 30V N-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Gate Charge 5 10 VD=15A ID=3.6A 4 TJ = 150°C 3 IS (A) VGS (V) Source-Drain Diode Forward Voltage 2 1 TJ = 25°C 1 0.1 0 0 1 2 3 4 5 6 QG, Charge (nC) 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) Capacitance Capacitance (pF) 1000 800 CISS 600 400 CRSS 200 COSS 0 0 5 10 15 20 25 30 VDS (V) 4 9460.2003.10.0.63 AAT9460 30V N-Channel Power MOSFET Ordering Information Package Marking Part Number (Tape and Reel) SC59 HA AAT9460IGY-T1 Package Information SC59 2.80 ± 0.20 1.575 ± 0.125 2.85 ± 0.15 0.95 BSC 0.40 ± 0.10 × 3 0.45 ± 0.15 0.14 ± 0.06 4° ± 4° 1.20 ± 0.30 0.075 ± 0.075 1.90 BSC All dimensions in millimeters. 9460.2003.10.0.63 5 AAT9460 30V N-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. 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Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 9460.2003.10.0.63