APM4500 Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/8A , • Pin Description RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V P-Channel S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V • SO-8 Super High Dense Cell Design for Extremely Low D1 RDS(ON) • • D1 S2 Reliable and Rugged SO-8 Package G2 G1 Applications S1 • N-Channel MOSFET Power Management in Notebook Computer , D2 D2 P-Channel MOSFET Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM4500 Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM4500 K : APM4500 XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 1 www.anpec.com.tw APM4500 Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N-Channel P-Channel VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±12 ±12 ID* Maximum Drain Current – Continuous 8 -4.3 IDM Maximum Drain Current – Pulsed 35 -17 PD Maximum Power Dissipation TA=25°C 2.5 2.5 TA=100°C 1.0 1.0 TJ Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Unit V A W 150 °C -55 to 150 °C 62.5 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4500 Unit Min. Typ. Max. Test Condition Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current N-Ch VGS=0V , IDS=250µA 20 P-Ch -20 VDS=16V , VGS=0V N-Ch 1 VDS=-16V , VGS=0V P-Ch -1 VDS=VGS , IDS=250µA N-Ch VDS=VGS , IDS=-250µA P-Ch -0.45 VGS=±12V , VDS=0V N-Ch ±100 VGS=±12V , VDS=0V P-Ch ±100 VGS=4.5V , IDS=8A RDS(ON)a Drain-Source On-state VGS=2.5V , IDS=5.2A Resistance VGS=-4.5V , IDS=-4.3A VGS=-2.5V , IDS=-2A VSDa Diode Forward Voltage N-Ch P-Ch 0.5 V 0.7 1 µA V -1 22 26 30 36 80 90 105 115 ISD=1.7A , VGS=0V N-Ch 0.8 1.3 ISD=-1.25A , VGS=0V P-Ch -0.7 -1.3 nA mΩ V Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 2 www.anpec.com.tw APM4500 Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) APM4500 Unit Min. Typ. Max. Test Condition Dynamicb Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time Ciss Input Capacitance N-Channel N-Ch 10 13 VDS=10V , IDS= 8A P-Ch 9 12 VGS=4.5V N-Ch 3 P-Channel P-Ch 3 VDS=-10V , IDS=-3A N-Ch 2.5 VGS=-4.5V P-Ch 1 N-Channel N-Ch 16 32 VDD=10V , IDS=1A , P-Ch 13 21.5 VGEN =4.5V , RG=0.2Ω N-Ch 40 75 P-Ch 36 56 P-Channel N-Ch 42 78 VDD=-10V , IDS=-1A , P-Ch 45 69.5 VGEN =-4.5V , RG=6Ω N-Ch 20 35 P-Ch 37 57.5 N-Ch 675 P-Ch 510 N-Ch 178 P-Ch 270 N-Ch 105 P-Ch 120 VGS=0V Coss Output Capacitance VDS=15V Frequency=1.0MHz Crss Reverse Transfer Capacitance nC ns pF Notes b : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 3 www.anpec.com.tw APM4500 Typical Characteristics N-Channel MOSFET Output Characteristics Transfer Characteristics 20 20 VGS=3,4,5,6,7,8,9,10V ID-Drain Current (A) ID-Drain Current (A) VGS=2.5V 16 12 8 VGS=2V 16 12 8 TJ=125°C 4 4 TJ=-55°C TJ=25°C VGS=1.5V 0 0 1 2 3 4 5 6 7 0 0.0 8 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.06 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250µA 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 0.04 VGS=2.5V 0.03 VGS=4.5V 0.02 0.01 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 0.05 0 2 4 6 8 10 ID - Drain Current (A) 4 www.anpec.com.tw APM4500 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.10 2.00 ID=8A RDS(ON)-On-Resistance (Ω) (Normalized) 0.09 RDS(ON)-On-Resistance (Ω) On-Resistance vs. Junction Temperature 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 1 2 3 4 5 6 7 8 9 VGS=4.5V ID=8A 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge Capacitance 10 1000 VDS=10V ID=1A 8 Frequency=1MHz 800 Capacitance (pF) VGS-Gate-Source Voltage (V) 25 6 4 Ciss 600 400 2 200 0 0 Coss Crss 0 4 8 12 16 20 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 5 www.anpec.com.tw APM4500 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 20 60 48 1 TJ=150°C Power (W) IS-Source Current (A) 10 TJ=25°C 36 24 12 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 VSD -Source-to-Drain Voltage (V) 1 10 100 Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 D= 0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=62.5°C/W 3.T JM -T A =P DM Z thJA 4.Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 6 www.anpec.com.tw APM4500 Typical Characteristics P-Channel MOSFET Output Characteristics Transfer Characteristics 10 10 -VGS=2V 8 -ID-Drain Current (A) -ID-Drain Current (A) -VGS=3,4.5,6,7,8V 6 4 -VGS=1.5V 2 8 6 4 TJ=25°C TJ=-55°C TJ=125°C 2 -VGS=1V 0 0 1 2 3 4 5 6 7 8 9 0 0.0 10 0.5 -VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 0.16 1.50 1.25 RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250µA 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 0.12 -VGS=2.5V 0.10 -VGS=4.5V 0.08 0.06 0.04 0.02 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 0.14 0 2 4 6 8 10 -ID - Drain Current (A) 7 www.anpec.com.tw APM4500 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 2.0 -ID=4.3A 0.18 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.20 On-Resistance vs. Junction Temperature 0.16 0.14 0.12 0.10 0.08 0.06 0.04 -VGS=4.5V -ID=4.3A 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1 2 3 4 5 6 7 0.2 -50 8 -VGS - Gate-to-Source Voltage (V) -25 0 75 100 125 150 Capacitance 800 -VDS=10V -ID=3A Frequency=1MHz 700 4 Capacitance (pF) -VGS-Gate-Source Voltage (V) 50 TJ - Junction Temperature (°C) Gate Charge 5 25 3 2 600 Ciss 500 400 Coss 300 1 200 0 0 2 4 6 8 100 10 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 Crss 0 5 10 15 20 -VDS - Drain-to-Source Voltage (V) 8 www.anpec.com.tw APM4500 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 10 14 -IS-Source Current (A) 12 TJ=150°C Power (W) 10 TJ=25°C 8 6 4 2 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.01 1.6 0.1 -VSD -Source-to-Drain Voltage (V) 1 10 100 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 0.01 1E-4 1.Duty Cycle, D=t1/t2 2.Per Unit Base=R thJA=62.5°C/W 3.T JM-T A=P DMZ thJA SINGLE PULSE 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 9 www.anpec.com.tw APM4500 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 1. 27B S C 0. 50B S C 8° 8° 10 www.anpec.com.tw APM4500 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 11 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4500 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 12 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM4500 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 13 www.anpec.com.tw