APM7318 Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/8A , RDS(ON)=15mΩ(typ.) @ VGS=4.5V SO-8 RDS(ON)=30mΩ(typ.) @ VGS=2.5V • S1 1 8 D1 G1 2 7 D1 Reliable and Rugged S2 3 6 D2 SO-8 Package G2 4 5 D2 Super High Dense Cell Design for Extremely Low RDS(ON) • • Top View D1 Applications • D1 D2 D2 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering and Marking Information APM 7318 Package C ode K : S O -8 O peration Junction Tem p. R ange C : -55 to 150° C H andling C ode TR : Tape & Reel H andling C ode Tem p. Range Package C ode AP M 7318 K : AP M 7318 XX XX X XX XX X - D ate Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 1 www.anpec.com.tw APM7318 Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 Unit V ID * Maximum Drain Current – Continuous 8 IDM Maximum Drain Current – Pulsed 24 PD Maximum Power Dissipation TA=25°C 2.5 W TA=100°C 1.0 W 150 °C -55 to 150 °C 50 °C/W TJ Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient A * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM7318 Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current IDSS VGS(th) IGSS Drain-Source On-state RDS(ON)a Resistance Diode Forward Voltage VSDa VGS=0V , IDS=250µA 20 V 1 µA 0.9 1.5 15 30 0.7 ±100 20 40 1.3 V nA VDS=18V , VGS=0V VDS=VGS , IDS=250µA VGS=±16V , VDS=0V VGS=4.5V , IDS=8A VGS=2.5V , IDS=2A ISD=4A , VGS=0V 0.7 mΩ V b Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd td(ON) Gate-Drain Charge Turn-on Delay Time Tr Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time td(OFF) Tf VDS=10V , IDS= 6A VGS=4.5V VDD=10V , IDS=2A , VGEN=4.5V , RG=0.2Ω VGS=0V Ciss Input Capacitance Coss Output Capacitance VDS=15V Crss Reverse Transfer Capacitance Frequency=1.0MHz Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% b : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 2 14 5 17 nC 2.8 9 15 14 30 16 20 43 24 1220 335 215 ns pF www.anpec.com.tw APM7318 Typical Characteristics Output Characteristics Transfer Characteristics 30 30 VGS=3,4,5,6,7,8,9,10V 25 20 IDS-Drain Current (A) IDS-Drain Current (A) 25 V GS=2.5V 15 10 VGS=2V 5 0 0 1 2 3 4 5 6 7 20 15 10 8 9 TJ=125°C 0 0.0 10 TJ=-55°C TJ=25°C 5 VDS-Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 3.0 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.05 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250µA 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 VGS=2.5V 0.03 0.02 VGS=4.5V 0.01 0.00 100 125 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 0.04 0 2 4 6 8 10 IDS-Drain Current (A) 3 www.anpec.com.tw APM7318 Typical Characteristics (Cont.) On-Resistaence vs. Junction Temperature 0.08 2.00 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 10 1 2 3 4 5 6 7 8 9 1.50 1.25 1.00 0.75 0.50 0.25 -25 0 25 50 Gate Charge Capacitance Characteristics 1800 Frequency=1MHz 1500 6 4 2 Ciss 1200 900 600 Coss 300 5 100 125 150 Tj-Junction Temperature (°C) VDS=10V IDS=6A 0 75 Gate Voltage (V) 8 0 VGS=4.5V IDS=8A 1.75 0.00 -50 10 C-Capacitance (pF) VGS-Gate-to-Source Voltage (V) IDS=8A RDS(ON)-On Resistance (Ω) (Normalized) RDS (ON) - On-Resistance (Ω) On-Resistance vs. Gate-to-Source Voltage 10 15 20 25 0 30 QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 Crss 0 5 10 15 20 VDS-Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM7318 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 80 70 10 60 TJ=150°C Power (W) ISD-Source Current (A) 30 TJ=25°C 1 50 40 30 20 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 1 VSD-Source to Drain Voltage 10 30 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted D= 0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 5 www.anpec.com.tw APM7318 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM7318 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM7318 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 W Bo F Ao D1 Ko T2 J C A B T1 SOP-8 A 330±1 Application SOP-8 F 5.5 ± 0.1 Application B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 8 www.anpec.com.tw APM7318 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 9 www.anpec.com.tw