APM9966/C Dual N-Channel Enhancement Mode MOSFET Features Applications • • SOP-8 20V/6A , RDS(ON)=19mΩ(typ.) @ VGS=4.5V RDS(ON)=27mΩ(typ.) @ VGS=2.5V TSSOP-8 20V/6A , RDS(ON)=21mΩ(typ.) @ VGS=4.5V RDS(ON)=29mΩ(typ.) @ VGS=2.5V • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged SO-8 and TSSOP-8 Packages Pin Description APM9966C APM9966 S1 1 8 D1 D1 1 8 D2 S1 1 8 D D 1 8 D G1 2 7 D1 S1 2 7 S2 G1 2 7 D S1 2 7 S2 S2 3 6 D2 S1 3 6 S2 S2 3 6 D S1 3 6 S2 G2 4 5 D2 G1 4 5 G2 G2 4 5 D G1 4 5 G2 SO-8 D1 TSSOP-8 SO-8 D D1 D1 G1 D2 S1 S1 S1 S1 D D2 D2 D G1 G1 G1 S1 TSSOP-8 G2 S1 D G2 G2 G2 S2 S2 S2 S2 S2 S2 ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 1 www.anpec.com.tw APM9966/C Ordering and Marking Information APM9966/C Package Code K : SO-8 O : TSSOP-8 Operation Junction Temp. Range C : -55 to 150 °C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM9966/C K/O : APM9966/C XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±10 ID * Maximum Drain Current – Continuous 6 IDM Maximum Drain Current – Pulsed 20 TA=25°C PD Maximum Power Dissipation 1.6 TSSOP-8 1.0 SO-8 TA=100°C TJ SO-8 Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient TSSOP-8 0.625 Unit V A W 0.4 150 °C -55 to 150 °C 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 2 www.anpec.com.tw APM9966/C Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM9966/C Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=250µA IDSS VGS(th) IGSS RDS(ON)a Zero Gate Voltage Drain Current VDS=16V , VGS=0V Gate Threshold Voltage VDS=VGS , IDS=250µA Gate Leakage Current VGS=±10V , VDS=0V Drain-Source On-state SOP-8 Resistance TSSOP-8 VSDa Diode Forward Voltage Dynamicb Qg Total Gate Charge Qgs Gate-Source Charge Qgd td(ON) Tr td(OFF) Tf Ciss Turn-off Fall Time Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Notes a b V 1 µA V ±100 nA 1 0.5 0.7 VGS=4.5V , IDS=6A 19 23 VGS=2.5V , IDS=5.2A 27 33 VGS=4.5V , IDS=6A 21 25 VGS=2.5V , IDS=5.2A 29 35 ISD=1.7A , VGS=0V 0.8 1.1 VDS=10V , IDS= 1A 14 3.5 18 VGS=4.5V , Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time 20 VDD=10V , IDS=1A , VGEN=4.5V , RG=0.2Ω VGS=0V mΩ V nC 2.1 25 47 22 67 42 122 36 67 ns 780 VDS=15V 165 Frequency=1.0MHz 105 pF : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 3 www.anpec.com.tw APM9966/C Typical Characteristics Transfer Characteristics Output Characteristics 20 20 VGS=2,3,4,5,6,7,8,9,10V 1V ID-Drain Current (A) ID-Drain Current (A) 16 12 0.5V 8 15 10 TJ=25°C 5 TJ=-55°C 4 0 TJ=125°C 0 1 2 3 4 0 0.0 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current SOP-8 0.05 1.50 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 VGS=4.5V 0.03 VGS=2.5V 0.02 0.01 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 0.04 0 4 8 12 16 20 ID - Drain Current (A) 4 www.anpec.com.tw APM9966/C Typical Characteristics (Cont.) On-Resistance vs. Drain Current On-Resistance vs. Gate-to-Source Voltage TSSOP-8 SOP-8 0.10 ID=6A 0.09 RDS(ON)-On-Resistance (Ω) RDS(ON)-On-Resistance (Ω) 0.05 0.04 VGS=4.5V 0.03 VGS=2.5V 0.02 0.01 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0.00 0 4 8 12 16 20 0 ID - Drain Current (A) 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage TSSOP-8 0.10 2.00 ID=6A 0.09 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 1 0.08 0.07 0.06 0.05 0.04 0.03 0.02 1.75 VGS=4.5V ID=6A 1.50 1.25 1.00 0.75 0.50 0.25 0.01 0.00 0 1 2 3 4 5 6 7 8 9 0.00 -50 10 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 -25 5 www.anpec.com.tw APM9966/C Typical Characteristics (Cont.) Gate Charge 1200 VDS=10V ID=1A Frequency=1MHz 1000 4 Capacitance (pF) VGS-Gate-Source Voltage (V) 5 Capacitance 3 2 1 0 Ciss 800 600 400 Coss 200 Crss 0 2 4 6 8 10 12 14 0 16 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) QG - Gate Charge (nC) Single Pulse Power Source-Drain Diode Forward Voltage 80 20 60 Power (W) IS-Source Current (A) 10 TJ=150°C 1 TJ=25°C 40 20 0 0.01 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 30 Time (sec) VSD -Source-to-Drain Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 0.1 6 www.anpec.com.tw APM9966/C Typical Characteristics (Cont.) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DM ZthJA D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 7 www.anpec.com.tw APM9966/C Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 1. 27B S C 0. 50B S C 8° 8° 8 www.anpec.com.tw APM9966/C Packaging Information (Cont.) TSSOP-8 e 8 7 2x E/2 E1 ( 2) E GAUGE PLANE S 1 2 e/2 0.25 D L A2 A b Dim A A1 A2 b D e E E1 L L1 R R1 S φ1 φ2 φ3 1 (L1) ( 3) A1 Millimeters Min. Inches Max. 1.2 0.15 1.05 0.30 3.1 0.00 0.80 0.19 2.9 Min. 0.000 0.031 0.007 0.114 0.65 BSC 6.40 BSC 4.30 0.45 0.026 BSC 0.252 BSC 4.50 0.75 0.169 0.018 8° 0.004 0.004 0.008 0° 1.0 REF 0.09 0.09 0.2 0° Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 Max. 0.047 0.006 0.041 0.012 0.122 0.177 0.030 0.039REF 12° REF 12° REF 8° 12° REF 12° REF 9 www.anpec.com.tw APM9966/C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 10 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM9966/C Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 A p p lic a tio n SOP- 8 A B T1 T2 W P E 6 2 + 1 .5 C 1 2 .7 5 + 0 .1 5 J 330 ± 1 2 ± 0 .5 1 2 .4 ± 0 .2 2 ± 0 .2 12± 0. 3 8 ± 0 .1 1 .7 5 ± 0 .1 F D D1 Po P1 Ao Bo Ko t 2 .0 ± 0 .1 6 .4 ± 0 .1 5 .2 ± 0 . 1 5 .5 ± 1 A p p lic a tio n T S S O P -8 1 .5 5 + 0 .1 1 .5 5 + 0 .2 5 4 .0 ± 0 .1 2 .1 ± 0 .1 0 .3 ± 0 .0 1 3 A B T1 T2 W P E 6 2 + 1 .5 C 1 2 .7 5 + 0 .1 5 J 330 ± 1 2 + 0 .5 1 2 .4 ± 0 .2 2 ± 0 .2 12± 0. 3 8 ± 0 .1 1 .7 5 ± 0 .1 F D D1 Po P1 Ao Bo Ko t 5 .5 ± 0 . 1 1 .5 + 0 .1 1 .5 + 0 .1 4 .0 ± 0 .1 2 .0 ± 0 .1 7 .0 ± 0 .1 3 .6 ± 0 .3 Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 11 1 .6 ± 0 .1 0 .3 ± 0 .0 1 3 www.anpec.com.tw APM9966/C Cover Tape Dimensions Application SOP- 8 TSSOP- 8 Carrier Width 12 12 Cover Tape Width 9.3 9.3 Devices Per Reel 2500 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2003 12 www.anpec.com.tw