FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is Designed for PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • • • Omnigold™ Metalization System Ø.125 NOM. FULL R C B MAXIMUM RATINGS E H D G F IC 16 A VCBO 60 V VCEO 25 V VCES 60 V C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 VEBO 4.0 V E PDISS O 230 W @ TC = 25 C O -65 C to +200 C TSTG -65 OC to +150 OC θ JC 1.1 OC/W CHARACTERISTICS SYMBOL MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 .125 / 3.18 B O TJ K I J .125 / 3.18 F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .280 / 7.11 K 1.050 / 26.67 .980 / 24.89 L ORDER CODE: ASI10588 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 100 mA BVCER IC = 100 mA BVCEO MINIMUM TYPICAL MAXIMUM UNITS 60 V 55 V IC = 100 mA 25 V BVEBO IE = 20 mA 4.0 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 28 V RBE = 10 Ω IC = 1.0 A 20 f = 1.0 MHz POUT = 150 W f = 108 MHz 9.0 --- 140 pF dB 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 150 % REV. A 1/1