ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: A C • • • Omnigold™ Metalization System 2x ØN FULL R D B MAXIMUM RATINGS G IC 10.0 A VCBO 36 V VCEO VCES E .725/18,42 F 16 V VEBO 4.0 V PDISS 175 W @ TC = 25 OC -65 OC to +200 OC TSTG -65 OC to +150 OC θ JC 1.0 OC/W inches / mm inches / mm A .150 / 3.43 .160 / 4.06 MAXIMUM .045 / 1.14 C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 .725 / 18.42 I J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M SYMBOL L MINIMUM H TJ J I DIM B 36 V CHARACTERISTICS M K H .120 / 3.05 N .135 / 3.43 ORDER CODE: ASI10685 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 20 mA 36 V BVCBO IC = 5.0 mA 36 BVEBO IE = 5.0 mA 4.0 ICBO VCB = 15 V 5.0 mA ICES VCE = 22 V 5.0 mA hFE VCE = 12.5 V 200 --- Cob VCB = 12.5 V 150 pF PG ηC VCE = 12.5 V IC = 1.0 A V 20 f = 1.0 MHz POUT = 45 W f = 470 MHz 5.0 dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. % REV. A 1/1