BLW33 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW33 is Designed for Television, Transmitters, and transposers Applications up to 860 MHz. PACKAGE STYLE .280 4L STUD A FEATURES: 45° • Common Emitter E B • PG = 10 dB at 1.0 W/ 860 MHz • Omnigold™ Metalization System C E B C D J E MAXIMUM RATINGS IC 1.25 A VCES 50 V VCEO 30 V VEBO 4.0 V G H K PDISS 19.4 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 9.0 °C/W CHARACTERISTICS #8-32 UNC DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 MAXIMUM .137 / 3.48 .572 / 14.53 F .130 / 3.30 G .245 / 6.22 H .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10500 TC = 25 °C NONETEST CONDITIONS SYMBOL I F MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 4.0 mA 50 V BVCEO IC = 30 mA 30 V BVEBO IE = 2.0 mA 4.0 V ICES VCE = 30 V hFE VCE = 25 V IC = 300 mA VCE = 25 V POUT = 1.0 W IC = 300 mA PG IMD1 20 f = 860 MHz 40 10 -60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.5 mA 120 --dB dBc REV. A 1/1